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MJW1302A

Onsemi

MJW1302A by Onsemi

The Onsemi MJW1302A is a PNP BJT transistor with 230V VCE, 15A IC, and 200W power dissipation. Ideal for amplifier applications, it has a min hFE of 12 and operates up to 150 °C. The package style is flange mount with a rectangular shape and through-hole terminals.

Median Price

$6.260

Lifecycle Status

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8

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1k+

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DigiKey

USA . 210 parts In-Stock

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$6.260

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$2.475

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Chip Stock

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Elcom Components

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MISTER SPROCKETS

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R&J Components

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LittleDiode

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AZTECH Wire

Italy . 781 parts In-Stock

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Problanco Electronics

Mexico . 5,533 parts In-Stock

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SupplyDigital Components

Austria . 4,668 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 2,577 parts In-Stock

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Corphita

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iodParts Technologies Inc.

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UHIMA Technologies

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Corohmni

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Overview

Enhance your amplifier projects with the MJW1302A power bipolar junction transistor by Onsemi. Crafted with precision and quality materials, this PNP transistor offers a seamless single configuration for optimal performance. Perfect for applications in amplifiers, this transistor boasts a maximum power dissipation of 200 W and a maximum collector-emitter voltage of 230 V. With a minimum DC current gain of 12 and a peak reflow temperature of 235 °C, the MJW1302A provides unmatched value and reliability for all your electronic needs. Experience superior quality and efficiency with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides good mechanical strength and can withstand various environmental conditions, making the transistor durable and reliable.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits and provides complementary operation to NPN transistors, enhancing overall circuit performance.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it a cost-effective solution for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor delivers high performance and efficiency in amplifying signals with low distortion.

Maximum Power Dissipation (Abs): 200 W

With a high maximum power dissipation of 200 W, this transistor can handle high power levels, making it suitable for demanding applications.

Maximum Operating Temperature: 150 °C

The high operating temperature of 150 °C ensures reliable performance even in harsh environments, offering stability and longevity.

Maximum Collector-Emitter Voltage: 230 V

The high maximum collector-emitter voltage rating of 230 V provides a safety margin for the transistor to handle high voltage applications effectively.

Maximum Collector Current (IC): 15 A

With a high maximum collector current of 15 A, this transistor can deliver high output power levels without being damaged, making it suitable for power amplification.

Nominal Transition Frequency (fT): 30 MHz

The high nominal transition frequency of 30 MHz indicates fast switching speeds, allowing for efficient amplification of high-frequency signals in audio and radio frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJW1302A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

230 V

Configuration:

Minimum DC Current Gain (hFE):

12

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJW1302A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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