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MJW18020G

Onsemi

MJW18020G by Onsemi

The Onsemi MJW18020G is a NPN BJT transistor with 450V VCEO and 30A IC, ideal for switching applications. With a max power dissipation of 180W and fT of 13MHz, it offers high performance in a rectangular flange mount package. The device features single configuration, matte tin finish, and operates up to 150°C temperature.

Median Price

$8.330

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 126 parts In-Stock

1+ parts

$7.080

100+ parts

$3.670

1k+ parts

$3.510

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126

$7.080

$3.670

$3.510

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Mouser Electronics

USA . 4,485 parts In-Stock

1+ parts

$8.240

100+ parts

-

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$4.080

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4,485

$8.240

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$4.080

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Newark

USA . 120 parts In-Stock

1+ parts

$8.420

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120

$8.420

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Element14

Singapore . 126 parts In-Stock

1+ parts

$11.910

100+ parts

$5.910

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$5.680

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126

$11.910

$5.910

$5.680

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Avnet

USA . 60 parts In-Stock

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60

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Distributors (In-Stock)

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Digiode

USA . 112 parts In-Stock

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$7.505

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112

$7.505

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TME

Poland . 77 parts In-Stock

1+ parts

$7.630

100+ parts

$5.350

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77

$7.630

$5.350

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Nova Conductors

Japan . 55 parts In-Stock

1+ parts

$8.010

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55

$8.010

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Vyrian

USA . 9,938 parts In-Stock

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Chip Stock

USA . 3,681 parts In-Stock

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3,681

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NAC Semi

USA . 720 parts In-Stock

1+ parts

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100+ parts

$9.310

1k+ parts

$8.380

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720

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$9.310

$8.380

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Sensible Micro Corp

USA . 254 parts In-Stock

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254

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IBS Electronics

USA . 240 parts In-Stock

1+ parts

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100+ parts

$5.259

1k+ parts

$5.217

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240

-

$5.259

$5.217

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Huijzer Components

Netherlands . 20 parts In-Stock

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20

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Flip Electronics

USA . 9 parts In-Stock

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9

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Holdelec - ElecDif-Pro

France . 4 parts In-Stock

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4

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ACDS - Activité Composants Distribution Service

France . 4 parts In-Stock

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4

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,344 parts In-Stock

1+ parts

$0.450

100+ parts

-

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4,344

$0.450

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Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$0.788

100+ parts

$0.717

1k+ parts

$0.646

10k+ parts

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70

$0.788

$0.717

$0.646

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Component Stockers USA

USA . 7,514 parts In-Stock

1+ parts

$6.710

100+ parts

$4.030

1k+ parts

$4.220

10k+ parts

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7,514

$6.710

$4.030

$4.220

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Ampacity Inc.

Singapore . 798 parts In-Stock

1+ parts

$6.710

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798

$6.710

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Corohmni

South Africa . 310 parts In-Stock

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$6.780

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310

$6.780

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Corphita

USA . 187 parts In-Stock

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$7.110

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187

$7.110

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Continental Prestige Electronics

USA . 854 parts In-Stock

1+ parts

$8.010

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$7.850

854

$8.010

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$7.850

Netroflash

USA . 100 parts In-Stock

1+ parts

$8.010

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$7.850

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100

$8.010

$7.850

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Semicontronic

India . 682 parts In-Stock

1+ parts

$14.620

100+ parts

$14.254

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$14.181

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682

$14.620

$14.254

$14.181

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Microchip USA

USA . 9,017 parts In-Stock

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$25.564

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9,017

$25.564

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Problanco Electronics

Mexico . 7,571 parts In-Stock

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TANS Electronics

Latvia . 7,570 parts In-Stock

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7,570

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Kulean Microsystems

USA . 5,628 parts In-Stock

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Lixinc

USA . 3,429 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,975 parts In-Stock

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SupplyDigital Components

Austria . 2,633 parts In-Stock

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Argo Parts USA

USA . 2,104 parts In-Stock

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Perfect Parts

USA . 1,202 parts In-Stock

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Authorized Procurement Solutions

USA . 360 parts In-Stock

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UHIMA Technologies

Türkiye . 219 parts In-Stock

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Futuretech Components

Singapore . 180 parts In-Stock

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Kepictronics

USA . 100 parts In-Stock

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100

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Overview

Experience the power of innovation with the MJW18020G by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by Onsemi, a trusted industry leader known for their cutting-edge technology and reliability, this NPN transistor offers exceptional performance and efficiency. Ideal for a wide range of electronic devices, the MJW18020G provides customers with the value, benefits, and advantages they need to stay ahead in today's competitive market. Discover the possibilities with Onsemi's MJW18020G and elevate your products to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in power switching applications due to their high efficiency and fast switching speeds, making this product suitable for such applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes this transistor easy to use in various applications without the need for complex setups.

Maximum Power Dissipation (Abs): 180 W

With a high power dissipation rating, this transistor can handle large amounts of power without overheating, ensuring reliable performance in demanding situations.

Maximum Collector-Emitter Voltage: 450 V

The high collector-emitter voltage rating allows this transistor to be used in high voltage applications, making it versatile for a wide range of circuit designs.

Maximum Collector Current (IC): 30 A

A high collector current rating enables this transistor to handle large currents, making it suitable for power switching applications where high current loads are involved.

Nominal Transition Frequency (fT): 13 MHz

The high transition frequency indicates fast switching speeds and good high-frequency performance, making this transistor ideal for applications requiring quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJW18020G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

5.5

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJW18020G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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