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MJW16212

Onsemi

MJW16212 by Onsemi

MJW16212 by Onsemi is a NPN BJT transistor with 650V VCE, 10A IC, and 150W Ptot. Ideal for switching applications, it has a hFE of 4 and fT of 2.75MHz. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$5.462

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

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Farnell

UK . 1,150 parts In-Stock

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$11.180

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$5.150

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$3.670

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$11.180

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Rochester

USA . 1,150 parts In-Stock

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$4.260

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$3.810

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$3.580

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$4.260

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$3.580

DigiKey

USA . 1,150 parts In-Stock

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$5.600

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Verical

USA . 1,150 parts In-Stock

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$5.325

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$4.763

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$4.763

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Distributors (In-Stock)

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Digiode

USA . 810 parts In-Stock

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$4.494

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Vyrian

USA . 1,471 parts In-Stock

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$4.730

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Ace Electronics

USA . 52 parts In-Stock

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$7.500

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DigiKey Marketplace

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MRC Electronics

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ACDS - Activité Composants Distribution Service

France . 180 parts In-Stock

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Prism Electronics

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Manotoh

Italy . 25 parts In-Stock

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Electronics Depot

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Cogito LLC

Ukraine . 18 parts In-Stock

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Sunrise Surplus Inc.

USA . 11 parts In-Stock

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Component Electronics Inc.

Canada . 11 parts In-Stock

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J & M Industries LLC

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LittleDiode

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Fibra_Brandt Electronic GMBH

Germany . 4 parts In-Stock

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EMSNET

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Tech-Mark Corp

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GES GmbH

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Distributors (Availability)

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Corphita

USA . 1,719 parts In-Stock

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$4.257

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$4.257

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Corohmni

South Africa . 131 parts In-Stock

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$4.730

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Continental Prestige Electronics

USA . 1,400 parts In-Stock

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$11.180

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$5.150

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$3.670

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$11.180

$5.150

$3.670

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QUARKTWIN TECHNOLOGY LTD

USA . 14,426 parts In-Stock

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Problanco Electronics

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Microchip USA

USA . 5,577 parts In-Stock

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TANS Electronics

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 955 parts In-Stock

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SupplyDigital Components

Austria . 274 parts In-Stock

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Kulean Microsystems

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Perfect Parts

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Assy Fe

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Overview

Enhance your power management solutions with the MJW16212 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their products. This power bipolar junction transistor (BJT) is perfect for switching applications, offering a maximum collector-emitter voltage of 650V and a maximum collector current of 10A. With a package style of flange mount and through-hole terminals, this NPN transistor provides ease of use and durability. Upgrade your projects today with the MJW16212 and experience the value and benefits it brings to your applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this transistor versatile and suitable for a wide range of projects.

Configuration: SINGLE

The single configuration simplifies the transistor setup and makes it easier to integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in tasks that require on/off control of electrical signals.

Maximum Power Dissipation (Abs): 150 W

With a high power dissipation capacity of 150 W, this transistor can handle heavy loads and high power requirements.

Maximum Collector-Emitter Voltage: 650 V

The high maximum collector-emitter voltage rating of 650 V allows for operation in applications that require higher voltages.

Maximum Collector Current (IC): 10 A

The high collector current rating of 10 A provides the capability to handle large currents, making it suitable for applications with high-power requirements.

Nominal Transition Frequency (fT): 2.75 MHz

The high nominal transition frequency of 2.75 MHz allows for fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJW16212 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-247AE

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJW16212 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-633-7828, 5961016337828

NIIN

016337828

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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