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MJW16010A

Onsemi

MJW16010A by Onsemi

MJW16010A by Onsemi is a NPN Power BJT with 500V VCE, 15A IC, and 150W Pd. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. The transistor's silicon element and flange mount style make it suitable for high-power requirements.

Median Price

$4.200

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (In-Stock)

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DF Sales Co.

USA . 52 parts In-Stock

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$4.200

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DF Sales Co.

USA . 52 parts In-Stock

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$4.200

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Vyrian

USA . 1,720 parts In-Stock

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PC Components Company LLC

USA . 1,352 parts In-Stock

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Bristol Electronics

USA . 1,337 parts In-Stock

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Digiode

USA . 533 parts In-Stock

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Electronic Expediters

USA . 158 parts In-Stock

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Huijzer Components

Netherlands . 28 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 22 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 16 parts In-Stock

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First Choice Components Inc.

USA . 11 parts In-Stock

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LWI Electronics Inc

India . 3 parts In-Stock

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Halfin

Belgium . 1 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 426 parts In-Stock

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SupplyDigital Components

Austria . 7,345 parts In-Stock

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TANS Electronics

Latvia . 2,577 parts In-Stock

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Kulean Microsystems

USA . 2,378 parts In-Stock

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Perfect Parts

USA . 1,435 parts In-Stock

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Corphita

USA . 320 parts In-Stock

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Problanco Electronics

Mexico . 220 parts In-Stock

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UHIMA Technologies

Türkiye . 131 parts In-Stock

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Overview

Discover the power and versatility of the MJW16010A by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJT) that are perfect for a variety of switching applications. With a maximum collector-emitter voltage of 500V and a maximum power dissipation of 150W, this NPN transistor offers superior performance and reliability. Whether you're looking to enhance your electronic projects or streamline your industrial processes, the MJW16010A provides the value, benefits, and advantages you need to succeed. Upgrade your technology with Onsemi today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Allows for easy integration into circuits that require NPN transistors.

Configuration: SINGLE

Simplified design and connection for ease of use.

Transistor Application: SWITCHING

Optimized for switching applications, making it reliable and efficient.

Package Shape: RECTANGULAR

Space-efficient design for convenient placement in circuits.

Terminal Form: THROUGH-HOLE

Easy to solder and integrate into circuit boards.

Maximum Power Dissipation (Abs): 150 W

Capable of handling high power levels, suitable for demanding applications.

Package Style: FLANGE MOUNT

Provides secure mounting and heat dissipation for improved performance.

Minimum DC Current Gain (hFE): 5

Ensures consistent performance and amplification in circuits.

Maximum Collector-Emitter Voltage: 500 V

Can withstand high voltage levels, suitable for various applications.

Transistor Element Material: SILICON

Reliable and stable material for consistent performance.

Maximum Collector Current (IC): 15 A

Capable of handling high currents, ideal for power applications.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability for reliable connections.

Terminal Position: SINGLE

Simplified connection for easier integration into circuits.

Case Connection: COLLECTOR

Specific connection point for efficient circuit design.

Peak Reflow Temperature °C: 235

Can withstand high temperatures during soldering processes.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJW16010A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

500 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-247AE

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MJW16010A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-440-9262, 5961014409262

NIIN

014409262

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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