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MJW16206

Inchange Semiconductor

MJW16206 by Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 12 A;

Median Price

$2.828

Lifecycle Status

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14

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Rochester

USA . 7,717 parts In-Stock

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$2.670

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$2.390

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$2.250

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Verical

USA . 7,177 parts In-Stock

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$2.987

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$2.813

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Digiode

USA . 1,751 parts In-Stock

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Vyrian

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Velocity Electronics

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Corel Iberica Componentes, S.L.

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Huijzer Components

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Fibra_Brandt Electronic GMBH

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GES GmbH

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LittleDiode

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Corphita

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Corohmni

South Africa . 328 parts In-Stock

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SupplyDigital Components

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Continental Prestige Electronics

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TANS Electronics

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Kulean Microsystems

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Problanco Electronics

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Assy Fe

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Technical Specifications

Power Bipolar Junction Transistors (BJT) MJW16206 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Inchange Semiconductor

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

350 pF

Maximum Collector-Emitter Voltage:

500 V

Configuration:

Minimum DC Current Gain (hFE):

3

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

MJW16206 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Inchange Semiconductor

Our ISC has been committed to the localization of power semiconductor devices for a long time. The product series include: bipolar transistor BJT Field Effect Transistor MOSFET SCR Thyristor Schottky rectifier diode fast recovery diode High Power Thyristors and Rectifiers and Modules RF Small Signal Transistor RF Transistor voltage regulator integrated circuit Our business started in 1991. We continue to strengthen the four advantages of "specialization, specialization and innovation", insist on the pursuit of quality and independent intellectual property rights, own two brands of isc and iscsemi, and have won more than 3,000 customers at home and abroad. We design chips, tape them out in multiple fabs, and package, test, package, and sell them ourselves. We offer over 56,000 part numbers in industry standard, specialty and custom parts. Voltage from 5V to 6000V, current from 5mA to 5000A. We continue to develop new products and have dozens of patents and high-tech products. Our products are widely used in small mobile devices to large industrial systems: automobiles and motorcycles, electronic speed control modules, medical, portable equipment, industrial equipment, consumer products, LED drivers, power switches, motor drives, rail transit, metallurgy Engineering, wind power generation, solar energy, power facilities, steelmaking, etc. In addition, we continue to manufacture and supply discontinued, hard-to-find, unpopular, and dwindling product models. Our factory is located in the innovative Wuxi New District, with complete production, testing, testing, aging, and assessment equipment. We are a high-tech enterprise in Jiangsu Province and have obtained RoHS certification, REACH certification and GB/T 19001-2016/ISO 9001: 2015 quality management system certification. We have an experienced production, design, quality and service team, and continue to provide technical support services for customers.

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