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MJW1302AG

Onsemi

MJW1302AG by Onsemi

MJW1302AG by Onsemi is a PNP power BJT with 230V VCEO, 15A IC, and 200W Ptot. Ideal for amplifier applications due to its single configuration and 30MHz fT. The transistor's package style is flange mount with a rectangular shape and through-hole terminals.

Median Price

$4.946

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 381 parts In-Stock

1+ parts

$4.410

100+ parts

$2.260

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$1.840

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381

$4.410

$2.260

$1.840

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DigiKey

USA . 215 parts In-Stock

1+ parts

$5.080

100+ parts

$2.842

1k+ parts

$1.988

10k+ parts

$1.868

215

$5.080

$2.842

$1.988

$1.868

Mouser Electronics

USA . 75 parts In-Stock

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$5.080

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75

$5.080

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Newark

USA . 364 parts In-Stock

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$5.790

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364

$5.790

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Element14

Singapore . 381 parts In-Stock

1+ parts

$7.410

100+ parts

$3.410

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$3.040

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381

$7.410

$3.410

$3.040

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Master Electronics

USA . 720 parts In-Stock

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$2.230

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$1.920

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$1.800

720

-

$2.230

$1.920

$1.800

Verical

USA . 720 parts In-Stock

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-

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$4.812

1k+ parts

$3.671

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720

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$4.812

$3.671

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Flip Electronics (Authorized)

USA . 142 parts In-Stock

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142

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Rochester

USA . 11 parts In-Stock

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$1.860

1k+ parts

$1.670

10k+ parts

$1.570

11

-

$1.860

$1.670

$1.570

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,630 parts In-Stock

1+ parts

$1.976

100+ parts

-

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1,630

$1.976

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Nova Conductors

Japan . 700 parts In-Stock

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$2.720

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700

$2.720

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Chip Stock

USA . 23,000 parts In-Stock

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Sensible Micro Corp

USA . 3,916 parts In-Stock

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3,916

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IBS Electronics

USA . 780 parts In-Stock

1+ parts

-

100+ parts

$3.969

1k+ parts

$2.721

10k+ parts

$2.525

780

-

$3.969

$2.721

$2.525

Vyrian

USA . 316 parts In-Stock

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316

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Flip Electronics

USA . 142 parts In-Stock

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142

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NAC Semi

USA . 90 parts In-Stock

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$8.160

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90

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$8.160

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Connector Distribution Corp

USA . 53 parts In-Stock

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53

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Right Parts Inc.

USA . 53 parts In-Stock

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53

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ComSIT Distribution GmbH

Germany . 41 parts In-Stock

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41

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Bristol Electronics

USA . 12 parts In-Stock

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12

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,775 parts In-Stock

1+ parts

$0.760

100+ parts

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4,775

$0.760

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Ampacity Inc.

Singapore . 457 parts In-Stock

1+ parts

$1.770

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457

$1.770

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Semicontronic

India . 290 parts In-Stock

1+ parts

$1.770

100+ parts

$1.726

1k+ parts

$1.717

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290

$1.770

$1.726

$1.717

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Corphita

USA . 2,123 parts In-Stock

1+ parts

$1.872

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2,123

$1.872

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Corohmni

South Africa . 212 parts In-Stock

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$2.080

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212

$2.080

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Component Stockers USA

USA . 349 parts In-Stock

1+ parts

$2.120

100+ parts

$3.510

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349

$2.120

$3.510

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Advanced Electronics

New Zealand . 86 parts In-Stock

1+ parts

$2.322

100+ parts

$2.113

1k+ parts

$1.904

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86

$2.322

$2.113

$1.904

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Argo Parts USA

USA . 1,579 parts In-Stock

1+ parts

$2.641

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1,579

$2.641

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Netroflash

USA . 500 parts In-Stock

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$2.720

100+ parts

$2.666

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500

$2.720

$2.666

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Continental Prestige Electronics

USA . 355 parts In-Stock

1+ parts

$3.880

100+ parts

$2.550

1k+ parts

$1.840

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355

$3.880

$2.550

$1.840

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,465 parts In-Stock

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Kulean Microsystems

USA . 6,769 parts In-Stock

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6,769

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Problanco Electronics

Mexico . 3,459 parts In-Stock

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3,459

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SupplyDigital Components

Austria . 3,293 parts In-Stock

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Kepictronics

USA . 2,566 parts In-Stock

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2,566

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Metaverse IC Inc.

Canada . 2,566 parts In-Stock

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2,566

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Perfect Parts

USA . 2,272 parts In-Stock

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2,272

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TANS Electronics

Latvia . 1,803 parts In-Stock

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1,803

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iodParts Technologies Inc.

India . 150 parts In-Stock

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UHIMA Technologies

Türkiye . 118 parts In-Stock

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Eastek

USA . 30 parts In-Stock

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Overview

Elevate your amplification projects with the MJW1302AG by Onsemi, a top-tier Power Bipolar Junction Transistor that guarantees unmatched quality and reliability. Manufactured by the trusted brand Onsemi, this PNP transistor offers superior performance in amplifier applications with a maximum power dissipation of 200W and a maximum collector-emitter voltage of 230V. With a minimum DC current gain of 12 and a maximum operating temperature of 150°C, this transistor is designed to deliver exceptional results. Upgrade your electronics with the MJW1302AG and experience seamless functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this transistor lightweight and durable, ideal for portable applications.

Polarity or Channel Type: PNP

With a PNP polarity, this transistor can easily switch between different signal sources, providing flexibility in amplifier circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces overall complexity in amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers high performance and reliability in audio and signal amplification.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and secure placement on circuit boards.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides easy installation and soldering onto PCBs, ensuring a secure connection.

No. of Terminals: 3

With 3 terminals, this transistor is easy to integrate into circuits and offers versatility in amplifier designs.

Maximum Power Dissipation (Abs): 200 W

The high maximum power dissipation of 200W ensures that this transistor can handle high power levels, making it suitable for demanding amplifier applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers easy mounting and secure attachment to heatsinks, improving thermal performance.

Minimum DC Current Gain (hFE): 12

With a minimum DC current gain of 12, this transistor provides consistent amplification of signals in various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures reliability and stability in extreme temperature environments.

Maximum Collector-Emitter Voltage: 230 V

The high maximum collector-emitter voltage of 230V allows for operation in a wide range of voltage levels, increasing versatility.

Transistor Element Material: SILICON

Silicon transistor elements offer high performance, low noise, and reliable operation in amplifier circuits.

Maximum Collector Current (IC): 15 A

With a maximum collector current of 15A, this transistor can handle high current loads, making it suitable for power amplifier applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and excellent solderability, ensuring long-term reliability.

Terminal Position: SINGLE

The single terminal position simplifies circuit design and ensures easy integration into amplifier circuits.

Case Connection: COLLECTOR

The collector case connection allows for efficient heat dissipation, ensuring optimal performance under high-power conditions.

Nominal Transition Frequency (fT): 30 MHz

The high nominal transition frequency of 30MHz allows for fast response and high-frequency amplification in audio and signal applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJW1302AG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

230 V

Configuration:

Minimum DC Current Gain (hFE):

12

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJW1302AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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