Loading...

MJW16018

Onsemi

MJW16018 by Onsemi

MJW16018 by Onsemi is a NPN BJT transistor with 800V VCE, 10A IC, and 150W Ptot. Ideal for switching applications, it has a min hFE of 4 and operates at a transition frequency of 3MHz. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

-

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 27,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

27,000

-

-

-

-

Vyrian

USA . 2,271 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,271

-

-

-

-

Digiode

USA . 2,034 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,034

-

-

-

-

Fibra_Brandt Electronic GMBH

Germany . 72 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

72

-

-

-

-

ComSIT Distribution GmbH

Germany . 55 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

55

-

-

-

-

Huijzer Components

Netherlands . 35 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

35

-

-

-

-

Sunrise Surplus Inc.

USA . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

LittleDiode

UK . 4 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 7,602 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,602

-

-

-

-

Kulean Microsystems

USA . 7,529 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,529

-

-

-

-

Problanco Electronics

Mexico . 1,474 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,474

-

-

-

-

UHIMA Technologies

Türkiye . 943 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

943

-

-

-

-

Corphita

USA . 421 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

421

-

-

-

-

TANS Electronics

Latvia . 372 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

372

-

-

-

-

Corohmni

South Africa . 367 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

367

-

-

-

-

SIE Connect GmbH (Excess)

Germany . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3

-

-

-

-

Overview

Unleash the power of innovation with the MJW16018 by Onsemi! As a leader in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJT) that are perfect for a variety of applications, from switching to amplification. With a maximum power dissipation of 150W and a maximum collector-emitter voltage of 800V, this NPN transistor offers unmatched performance and reliability. Say goodbye to inefficiency and hello to seamless operation with the MJW16018 - a product that truly adds value and enhances your projects. Elevate your creations today with Onsemi's cutting-edge technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight, durable, and cost-effective.

Polarity or Channel Type: NPN

NPN transistors are commonly used for general purpose applications and are easy to integrate into circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to use.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control the flow of current.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and secure placement within a circuit.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a sturdy connection and are suitable for manual soldering.

No. of Terminals: 3

Three terminals offer simplicity in connection and usage.

Maximum Power Dissipation (Abs): 150 W

High power dissipation allows the transistor to handle large loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides a secure and stable mounting option for industrial applications.

Minimum DC Current Gain (hFE): 4

Higher DC current gain ensures the transistor amplifies the current signal effectively.

Maximum Collector-Emitter Voltage: 800 V

High maximum voltage rating allows the transistor to be used in various high voltage applications.

Transistor Element Material: SILICON

Silicon material offers better thermal performance and higher efficiency compared to other materials.

Maximum Collector Current (IC): 10 A

High collector current rating allows the transistor to handle large current loads.

Terminal Finish: TIN LEAD

Tin lead finish ensures good conductivity and solderability for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in a circuit.

Case Connection: COLLECTOR

Collector case connection ensures efficient heat dissipation and thermal management.

Peak Reflow Temperature °C: 235

High peak reflow temperature allows for reliable soldering and ensures durability.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency enables the transistor to switch states quickly, making it suitable for fast switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJW16018 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

800 V

Configuration:

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-247AE

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJW16018 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20