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PCP1103-TD-H

Onsemi

PCP1103-TD-H by Onsemi

PCP1103-TD-H by Onsemi is a PNP BJT transistor with 3 terminals, capable of handling up to 1.5A collector current and 30V collector-emitter voltage. With a min hFE of 200, it's ideal for switching applications at temperatures up to 150 °C. This surface-mount transistor has a small outline package style suitable for high-frequency operations up to 450MHz.

Median Price

$0.453

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 734 parts In-Stock

1+ parts

$0.740

100+ parts

$0.296

1k+ parts

$0.225

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734

$0.740

$0.296

$0.225

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Rochester

USA . 1,580 parts In-Stock

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-

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$0.166

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$0.138

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$0.123

1,580

-

$0.166

$0.138

$0.123

Distributors (In-Stock)

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Digiode

USA . 2,466 parts In-Stock

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$0.136

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$0.136

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Chip Stock

USA . 20,000 parts In-Stock

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Flip Electronics

USA . 5,000 parts In-Stock

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Vyrian

USA . 4,645 parts In-Stock

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4,645

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Distributors (Availability)

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Corphita

USA . 73 parts In-Stock

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$0.129

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73

$0.129

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Corohmni

South Africa . 480 parts In-Stock

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$0.143

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480

$0.143

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 7,949 parts In-Stock

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Kulean Microsystems

USA . 6,910 parts In-Stock

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TANS Electronics

Latvia . 5,097 parts In-Stock

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Kepictronics

USA . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 2,307 parts In-Stock

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UHIMA Technologies

Türkiye . 671 parts In-Stock

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671

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Overview

Enhance your electronic devices with the PCP1103-TD-H Power Bipolar Junction Transistor by Onsemi. Manufactured with precision and expertise, this PNP transistor is perfect for switching applications, providing reliable performance and durability. Its small outline package shape and flat terminal form make it easy to integrate into various designs. With a maximum collector-emitter voltage of 30V and a maximum collector current of 1.5A, this transistor offers exceptional power dissipation and high DC current gain. Upgrade your products with this high-quality component and experience enhanced efficiency and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it more durable and reliable.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor suitable for a variety of circuit designs.

Configuration: SINGLE

Having a single configuration simplifies circuit design and reduces complexity in applications where only one transistor is needed.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance in switching circuits.

Surface Mount: YES

Being surface mountable allows for easy and compact integration onto PCBs, saving space and facilitating automated assembly processes.

Maximum Power Dissipation (Abs): 3.5 W

With a high power dissipation rating, this transistor can handle higher power loads without overheating, ensuring reliable operation.

Maximum Collector-Emitter Voltage: 30 V

The high collector-emitter voltage rating allows the transistor to be used in applications with higher voltage requirements while maintaining stability.

Maximum Collector Current (IC): 1.5 A

With a high collector current rating, this transistor can handle larger electrical loads in circuit applications without getting damaged.

Nominal Transition Frequency (fT): 450 MHz

The high transition frequency indicates that this transistor is capable of operating at high frequencies, making it suitable for high-speed applications such as RF circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PCP1103-TD-H attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-243

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PCP1103-TD-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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