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PCP1203-TD-H

Onsemi

PCP1203-TD-H by Onsemi

PCP1203-TD-H by Onsemi is a NPN Power BJT with 1.5A IC, 200 hFE, and 3.5W Pd. Ideal for surface mount applications in power electronics, it operates up to 150 °C making it suitable for various high-power circuits.

Median Price

$0.123

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 11,475 parts In-Stock

1+ parts

-

100+ parts

$0.144

1k+ parts

$0.120

10k+ parts

$0.107

11,475

-

$0.144

$0.120

$0.107

DigiKey

USA . 11,085 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.090

11,085

-

-

-

$0.090

Flip Electronics (Authorized)

USA . 11,085 parts In-Stock

1+ parts

-

100+ parts

-

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-

11,085

-

-

-

-

Farnell

UK . 10,750 parts In-Stock

1+ parts

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100+ parts

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$0.112

10,750

-

-

-

$0.112

Verical

USA . 8,800 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

$0.134

8,800

-

-

-

$0.134

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,436 parts In-Stock

1+ parts

$0.110

100+ parts

-

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1,436

$0.110

-

-

-

Digiode

USA . 604 parts In-Stock

1+ parts

$0.130

100+ parts

-

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-

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604

$0.130

-

-

-

Chip Stock

USA . 38,000 parts In-Stock

1+ parts

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38,000

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Flip Electronics

USA . 11,085 parts In-Stock

1+ parts

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100+ parts

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11,085

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DigiKey Marketplace

USA . 11,085 parts In-Stock

1+ parts

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11,085

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 352 parts In-Stock

1+ parts

$0.110

100+ parts

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352

$0.110

-

-

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Corphita

USA . 1,747 parts In-Stock

1+ parts

$0.123

100+ parts

-

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1,747

$0.123

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Kepictronics

USA . 306,000 parts In-Stock

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306,000

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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QUARKTWIN TECHNOLOGY LTD

USA . 17,579 parts In-Stock

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17,579

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Continental Prestige Electronics

USA . 10,750 parts In-Stock

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100+ parts

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$0.112

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10,750

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$0.112

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TANS Electronics

Latvia . 6,817 parts In-Stock

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6,817

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SupplyDigital Components

Austria . 2,641 parts In-Stock

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2,641

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Problanco Electronics

Mexico . 1,127 parts In-Stock

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1,127

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Perfect Parts

USA . 1,024 parts In-Stock

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1,024

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UHIMA Technologies

Türkiye . 376 parts In-Stock

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376

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Kulean Microsystems

USA . 160 parts In-Stock

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160

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Overview

Discover the reliable and high-quality PCP1203-TD-H by Onsemi, a leading manufacturer in the industry. This Power Bipolar Junction Transistor (BJT) offers exceptional performance and versatility for a variety of applications. With its NPN polarity and single configuration, this surface mount transistor provides a maximum power dissipation of 3.5W and a minimum DC current gain of 200. Trust in Onsemi's reputation for quality and innovation, and experience the value and benefits that the PCP1203-TD-H brings to your projects.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification tasks and are easily compatible with other components in electronic circuits, making this product versatile and widely applicable.

Configuration: SINGLE

Single configuration transistors are simpler to work with and provide a straightforward solution for basic circuit designs, making this product ideal for simpler applications.

Surface Mount: YES

Surface mount technology allows for compact and efficient PCB design, enabling space-saving and flexible integration of this transistor into various electronic devices.

Maximum Power Dissipation: 3.5 W

With a high maximum power dissipation capability, this transistor can handle relatively high levels of power, offering robust performance and reliability in demanding operating conditions.

Minimum DC Current Gain (hFE): 200

A high minimum DC current gain ensures stable and consistent amplification of signals, making this transistor suitable for applications requiring precise signal control and amplification.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance allows this transistor to operate effectively in elevated temperature environments without performance degradation, ensuring reliability in various operating conditions.

Maximum Collector Current (IC): 1.5 A

With a maximum collector current of 1.5 A, this transistor can handle moderate to high current levels, making it suitable for applications that require significant power handling capabilities.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish provides good solderability and reliable electrical connections, enhancing the overall durability and performance of this transistor in assembly and operation.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum time at peak reflow temperature of 30 seconds ensures efficient and reliable soldering during assembly, streamlining the manufacturing process and ensuring consistent product quality.

Peak Reflow Temperature: 260

A peak reflow temperature of 260 °C allows for effective soldering of this transistor on the PCB, ensuring secure mounting and reliable electrical connections for optimal performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PCP1203-TD-H attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PCP1203-TD-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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