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NJX1675PDR2G

Onsemi

NJX1675PDR2G by Onsemi

NJX1675PDR2G by Onsemi is a Power BJT with NPN/PNP polarity, 2 separate elements. Ideal for switching applications, it has hFE of 180, VCE of 30V, and IC of 3A. With a max temp of 150 °C and fT of 100MHz, this transistor in Gull Wing package suits SMT designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 51,000 parts In-Stock

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Vyrian

USA . 8,780 parts In-Stock

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8,780

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Digiode

USA . 1,346 parts In-Stock

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AZTECH Wire

Italy . 500 parts In-Stock

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$13.390

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500

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Component Stockers USA

USA . 356 parts In-Stock

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$99.990

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356

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Authorized Procurement Solutions

USA . 40,000 parts In-Stock

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SupplyDigital Components

Austria . 7,248 parts In-Stock

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Kulean Microsystems

USA . 3,803 parts In-Stock

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Corphita

USA . 2,348 parts In-Stock

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TANS Electronics

Latvia . 2,065 parts In-Stock

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Problanco Electronics

Mexico . 1,677 parts In-Stock

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UHIMA Technologies

Türkiye . 847 parts In-Stock

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Corohmni

South Africa . 167 parts In-Stock

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Overview

Enhance your electronic projects with the NJX1675PDR2G by Onsemi, a high-quality Power Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry known for their innovative solutions, this transistor is perfect for switching applications. With NPN and PNP configurations, separate 2 elements, and a maximum collector-emitter voltage of 30V, this transistor provides exceptional value and versatility. Whether you're a hobbyist or a professional, this product will meet your needs with its small outline package style and robust design. Upgrade your projects today with the NJX1675PDR2G and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and reliability of the product, making it suitable for a variety of applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP channel types allows for flexibility in design and compatibility with different circuit configurations.

Configuration: SEPARATE, 2 ELEMENTS

Separate configuration with 2 elements provides better control and performance in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards.

Package Shape: RECTANGULAR

Rectangular shape provides compact and space-saving design options for circuit layouts.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering and reliable electrical connections in circuit assemblies.

No. of Elements: 2

Having 2 elements provides redundancy and improved performance in high-demand applications.

No. of Terminals: 8

With 8 terminals, this product offers versatile connection options for various circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for efficient use of board real estate in electronic devices.

Minimum DC Current Gain (hFE): 180

High minimum DC current gain ensures stable performance and amplification capabilities in circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 30 V

With a maximum collector-emitter voltage of 30V, this product is suitable for a variety of voltage requirements in circuits.

Transistor Element Material: SILICON

Silicon material in the transistor element provides excellent electrical characteristics and reliability in operation.

Maximum Collector Current (IC): 3 A

Capable of handling a maximum collector current of 3A, making it suitable for high-power applications.

Terminal Finish: TIN

Tin terminal finish ensures good conductivity and corrosion resistance for long-lasting performance.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options and flexibility in circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Designed to withstand peak reflow temperatures for up to 30 seconds, ensuring reliability during soldering processes.

Peak Reflow Temperature °C: 260

Capable of withstanding peak reflow temperatures of 260 °C, making it suitable for lead-free soldering processes.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency of 100 MHz allows for fast switching and high-frequency operation in circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJX1675PDR2G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJX1675PDR2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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