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2SD1803T-H

Onsemi

2SD1803T-H by Onsemi

The Onsemi 2SD1803T-H is a PNP BJT transistor with VCEsat of 0.55V, IC of 5A, and hFE of 35. Ideal for switching applications, it has a max power dissipation of 20W and operates at temperatures up to 150°C. The package style is in-line with through-hole terminals.

Median Price

$0.514

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 72,500 parts In-Stock

1+ parts

-

100+ parts

$0.458

1k+ parts

$0.381

10k+ parts

$0.339

72,500

-

$0.458

$0.381

$0.339

DigiKey

USA . 72,500 parts In-Stock

1+ parts

-

100+ parts

-

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$0.570

10k+ parts

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72,500

-

-

$0.570

-

Distributors (In-Stock)

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Digiode

USA . 911 parts In-Stock

1+ parts

$0.360

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911

$0.360

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Chip Stock

USA . 31,000 parts In-Stock

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31,000

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Vyrian

USA . 12,685 parts In-Stock

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12,685

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Distributors (Availability)

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Corphita

USA . 968 parts In-Stock

1+ parts

$0.341

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-

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968

$0.341

-

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Corohmni

South Africa . 475 parts In-Stock

1+ parts

$0.379

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-

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475

$0.379

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Component Stockers USA

USA . 64,817 parts In-Stock

1+ parts

$0.390

100+ parts

$0.370

1k+ parts

$0.330

10k+ parts

$0.330

64,817

$0.390

$0.370

$0.330

$0.330

Native Components

USA . 978 parts In-Stock

1+ parts

$1.204

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978

$1.204

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Northwest PG Solutions

USA . 768 parts In-Stock

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$1.324

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768

$1.324

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AZTECH Wire

Italy . 579 parts In-Stock

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$12.820

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579

$12.820

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Continental Prestige Electronics

USA . 72,500 parts In-Stock

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$0.342

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72,500

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$0.342

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Kulean Microsystems

USA . 7,565 parts In-Stock

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7,565

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SupplyDigital Components

Austria . 4,723 parts In-Stock

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4,723

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Problanco Electronics

Mexico . 3,675 parts In-Stock

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3,675

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TANS Electronics

Latvia . 3,033 parts In-Stock

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3,033

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UHIMA Technologies

Türkiye . 210 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi 2SD1803T-H Power Bipolar Junction Transistor. Known for its high quality and reliability, Onsemi brings you a product that is designed for optimal performance in switching applications. This PNP transistor offers a maximum VCEsat of 0.55V and a maximum collector current of 5A, making it ideal for a wide range of projects. With a maximum power dissipation of 20W and a minimum DC current gain of 35, this transistor is a valuable asset for any electronics enthusiast or professional looking to take their designs to the next level. Experience the benefits of superior technology and craftsmanship with the Onsemi 2SD1803T-H.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy material provides good thermal and electrical insulation, making the transistor more reliable and durable.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor suitable for various switching tasks.

Configuration: SINGLE

Single configuration transistors are easy to use and implement in circuits, making this product user-friendly.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and effective operation in such scenarios.

Maximum VCEsat: 0.55 V

Low VCEsat voltage results in minimal power loss and high efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement on circuit boards, improving overall convenience.

No. of Terminals: 3

Three terminals provide simplicity in connection and use, suitable for straightforward circuit designs.

Maximum Power Dissipation (Abs): 20 W

High maximum power dissipation capability allows for handling larger currents and voltages without damage.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum voltage rating, the transistor can be used in a wide range of applications without risk of breakdown.

Nominal Transition Frequency (fT): 130 MHz

High transition frequency allows for fast switching speeds, ideal for applications requiring quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD1803T-H attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Base Capacitance:

60 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

TIN BISMUTH

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.55 V

Trade Compliance

2SD1803T-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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