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2SA2012-TD-E

Onsemi

2SA2012-TD-E by Onsemi

2SA2012-TD-E by Onsemi is a PNP BJT transistor for switching applications. With hFE of 200, it can handle up to 5A collector current and 3.5W power dissipation. Operating at max 150 °C, this transistor has a fT of 350MHz making it suitable for high-frequency applications.

Median Price

$0.367

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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ComSIT Distribution GmbH

Germany . 24,598 parts In-Stock

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ComSIT USA

USA . 24,598 parts In-Stock

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Vyrian

USA . 8,750 parts In-Stock

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Chip Stock

USA . 3,384 parts In-Stock

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Digiode

USA . 1,364 parts In-Stock

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Flip Electronics

USA . 1,000 parts In-Stock

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TME

Poland . 15 parts In-Stock

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$0.367

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$0.330

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$0.330

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Distributors (Availability)

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Corohmni

South Africa . 112 parts In-Stock

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$0.414

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Native Components

USA . 177 parts In-Stock

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$0.915

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Northwest PG Solutions

USA . 215 parts In-Stock

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$1.007

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AZTECH Wire

Italy . 1,158 parts In-Stock

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$9.820

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 14,167 parts In-Stock

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Problanco Electronics

Mexico . 8,223 parts In-Stock

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TANS Electronics

Latvia . 7,473 parts In-Stock

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SupplyDigital Components

Austria . 6,911 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

USA . 3,100 parts In-Stock

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Kulean Microsystems

USA . 2,451 parts In-Stock

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Corphita

USA . 2,217 parts In-Stock

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UHIMA Technologies

Türkiye . 703 parts In-Stock

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Component Stockers USA

USA . 653 parts In-Stock

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Overview

Unlock the power of reliable and high-quality performance with the 2SA2012-TD-E by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch products that meet your every need. This Power Bipolar Junction Transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 30V and a maximum collector current of 5A. With a small outline package style and surface mount capability, this transistor provides optimal efficiency in a compact design. Experience seamless operation and superior functionality with the 2SA2012-TD-E, the ultimate solution for your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

High durability and resistance to heat and moisture make this product suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, offering good efficiency and performance.

Configuration: SINGLE

Simplified circuit design and ease of use in various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance.

Surface Mount: YES

Easy to mount on PCBs, saving space and providing mechanical stability.

Maximum Power Dissipation (Abs): 3.5 W

High power dissipation capability allows for operation in demanding conditions without overheating.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, ensuring reliable operation in various applications.

Maximum Collector-Emitter Voltage: 30 V

Suitable for low to medium voltage applications, providing flexibility in circuit design.

Maximum Collector Current (IC): 5 A

High collector current rating allows for handling high current loads, making it ideal for power applications.

Nominal Transition Frequency (fT): 350 MHz

High transition frequency enables fast switching speeds, enhancing overall performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA2012-TD-E attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-243

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA2012-TD-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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