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2SA2124-TD-E

Onsemi

2SA2124-TD-E by Onsemi

Onsemi's 2SA2124-TD-E is a PNP BJT transistor with max. power dissipation of 3.5W, hFE of 65, and max. collector current of 2A. Ideal for switching applications, it operates at up to 150°C and has a max. collector-emitter voltage of 30V.

Median Price

$0.168

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 326 parts In-Stock

1+ parts

$0.700

100+ parts

$0.280

1k+ parts

$0.213

10k+ parts

-

326

$0.700

$0.280

$0.213

-

Chip1Stop

Japan . 836 parts In-Stock

1+ parts

$1.470

100+ parts

$0.422

1k+ parts

$0.346

10k+ parts

-

836

$1.470

$0.422

$0.346

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Flip Electronics (Authorized)

USA . 77,000 parts In-Stock

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77,000

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Rochester

USA . 23,599 parts In-Stock

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-

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$0.168

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$0.140

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$0.124

23,599

-

$0.168

$0.140

$0.124

Verical

USA . 20,509 parts In-Stock

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-

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$0.155

20,509

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$0.155

Mouser Electronics

USA . 5,446 parts In-Stock

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-

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$0.163

10k+ parts

$0.128

5,446

-

-

$0.163

$0.128

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,610 parts In-Stock

1+ parts

$0.129

100+ parts

-

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1,610

$0.129

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Vyrian

USA . 1,107 parts In-Stock

1+ parts

$0.136

100+ parts

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1,107

$0.136

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Flip Electronics

USA . 67,000 parts In-Stock

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67,000

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Chip Stock

USA . 51,000 parts In-Stock

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51,000

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Distributors (Availability)

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Corphita

USA . 250 parts In-Stock

1+ parts

$0.122

100+ parts

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250

$0.122

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Corohmni

South Africa . 290 parts In-Stock

1+ parts

$0.136

100+ parts

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290

$0.136

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Microchip USA

USA . 2,796 parts In-Stock

1+ parts

$1.060

100+ parts

$1.060

1k+ parts

$1.050

10k+ parts

$1.050

2,796

$1.060

$1.060

$1.050

$1.050

Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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306,000

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Continental Prestige Electronics

USA . 59,619 parts In-Stock

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$0.164

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59,619

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$0.164

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QUARKTWIN TECHNOLOGY LTD

USA . 13,904 parts In-Stock

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13,904

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Perfect Parts

USA . 12,047 parts In-Stock

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12,047

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Lixinc

USA . 9,975 parts In-Stock

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9,975

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Kulean Microsystems

USA . 6,895 parts In-Stock

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6,895

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Kepictronics

USA . 6,500 parts In-Stock

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6,500

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Problanco Electronics

Mexico . 5,614 parts In-Stock

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5,614

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SupplyDigital Components

Austria . 5,459 parts In-Stock

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5,459

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TANS Electronics

Latvia . 5,172 parts In-Stock

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5,172

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Northwest PG Solutions

USA . 2,336 parts In-Stock

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$4.724

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2,336

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$4.724

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Authorized Procurement Solutions

USA . 1,740 parts In-Stock

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1,740

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Native Components

USA . 887 parts In-Stock

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$4.675

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887

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$4.675

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GreenTree Electronics

Israel . 836 parts In-Stock

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836

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UHIMA Technologies

Türkiye . 783 parts In-Stock

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783

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Overview

Discover the power of the 2SA2124-TD-E Power Bipolar Junction Transistor by Onsemi, a high-quality solution for switching applications. With a maximum collector-emitter voltage of 30 V and a maximum collector current of 2 A, this PNP transistor offers reliable performance in a compact, surface-mount package. Trust in Onsemi's reputation for excellence in semiconductor manufacturing to deliver a product that meets your needs for efficiency and precision. Whether you're designing consumer electronics or industrial equipment, the 2SA2124-TD-E provides the value and reliability you need to succeed. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides good insulation and protection for the transistor, ensuring reliable performance.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits that require PNP transistors, making this product versatile for a range of applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control the flow of current in electronic circuits, making it suitable for various switching tasks.

Surface Mount: YES

Being surface mountable makes installation of this transistor easier and more convenient, especially in compact electronic devices where space is limited.

Maximum Power Dissipation (Abs): 3.5 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating, ensuring reliable operation under heavy loads.

Maximum Collector-Emitter Voltage: 30 V

The high maximum collector-emitter voltage rating allows this transistor to be used in applications with higher voltage requirements, providing flexibility in circuit design.

Nominal Transition Frequency (fT): 440 MHz

The high nominal transition frequency enables this transistor to switch signals at high speeds, making it suitable for high-frequency applications such as RF amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA2124-TD-E attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

65

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA2124-TD-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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