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2SA2202-TD-E

Onsemi

2SA2202-TD-E by Onsemi

2SA2202-TD-E by Onsemi is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 3.5W, hFE of 200, and operates at up to 150 °C. Its small outline package makes it suitable for surface mount designs in various electronic devices.

Median Price

$0.374

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 8,000 parts In-Stock

1+ parts

$0.151

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-

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8,000

$0.151

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Newark

USA . 3,611 parts In-Stock

1+ parts

$0.886

100+ parts

$0.355

1k+ parts

$0.245

10k+ parts

-

3,611

$0.886

$0.355

$0.245

-

Mouser Electronics

USA . 2,481 parts In-Stock

1+ parts

$0.910

100+ parts

$0.366

1k+ parts

$0.281

10k+ parts

-

2,481

$0.910

$0.366

$0.281

-

DigiKey

USA . 983 parts In-Stock

1+ parts

$0.910

100+ parts

$0.366

1k+ parts

$0.280

10k+ parts

-

983

$0.910

$0.366

$0.280

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Flip Electronics (Authorized)

USA . 16,000 parts In-Stock

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16,000

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Verical

USA . 15,263 parts In-Stock

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$0.203

15,263

-

-

-

$0.203

Rochester

USA . 15,263 parts In-Stock

1+ parts

-

100+ parts

$0.219

1k+ parts

$0.182

10k+ parts

$0.162

15,263

-

$0.219

$0.182

$0.162

Farnell

UK . 3,685 parts In-Stock

1+ parts

-

100+ parts

$0.257

1k+ parts

$0.162

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-

3,685

-

$0.257

$0.162

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Element14

Singapore . 3,685 parts In-Stock

1+ parts

-

100+ parts

$0.492

1k+ parts

$0.297

10k+ parts

$0.269

3,685

-

$0.492

$0.297

$0.269

Chip1Stop

Japan . 1,980 parts In-Stock

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-

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1,980

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Distributors (In-Stock)

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Digiode

USA . 1,036 parts In-Stock

1+ parts

$0.170

100+ parts

-

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1,036

$0.170

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Vyrian

USA . 1,012 parts In-Stock

1+ parts

$0.176

100+ parts

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1,012

$0.176

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Chip Stock

USA . 61,000 parts In-Stock

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61,000

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Flip Electronics

USA . 12,000 parts In-Stock

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12,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,118 parts In-Stock

1+ parts

$0.161

100+ parts

-

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1,118

$0.161

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-

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Corohmni

South Africa . 177 parts In-Stock

1+ parts

$0.171

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177

$0.171

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Native Components

USA . 310 parts In-Stock

1+ parts

$0.388

100+ parts

-

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$0.372

310

$0.388

-

-

$0.372

Northwest PG Solutions

USA . 61 parts In-Stock

1+ parts

$0.427

100+ parts

-

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10k+ parts

$0.376

61

$0.427

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-

$0.376

Perfect Parts

USA . 662,148 parts In-Stock

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662,148

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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306,000

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Authorized Procurement Solutions

USA . 146,896 parts In-Stock

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146,896

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Kepictronics

USA . 24,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 15,321 parts In-Stock

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15,321

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SupplyDigital Components

Austria . 5,226 parts In-Stock

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5,226

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Continental Prestige Electronics

USA . 3,835 parts In-Stock

1+ parts

-

100+ parts

$0.290

1k+ parts

$0.222

10k+ parts

$0.209

3,835

-

$0.290

$0.222

$0.209

TANS Electronics

Latvia . 2,261 parts In-Stock

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2,261

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Problanco Electronics

Mexico . 1,822 parts In-Stock

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1,822

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Kulean Microsystems

USA . 1,395 parts In-Stock

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1,395

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GreenTree Electronics

Israel . 896 parts In-Stock

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896

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UHIMA Technologies

Türkiye . 71 parts In-Stock

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71

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Overview

Discover the power and reliability of the 2SA2202-TD-E by Onsemi, a top-quality Power Bipolar Junction Transistor designed for switching applications. With a maximum collector-emitter voltage of 100V and a maximum operating temperature of 150 °C, this PNP transistor offers exceptional performance in a compact package. Trust in Onsemi's reputation for excellence and choose the 2SA2202-TD-E for your next project to experience seamless operation and efficient power management.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides good protection for the transistor, making it durable and resistant to damage.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits that require PNP transistors, expanding the potential applications of the product.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it easier to use in various electronic projects.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers reliable performance and efficient control of current flow.

Surface Mount: YES

Being surface-mountable makes this transistor suitable for modern PCB designs, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient use of space on the PCB, optimizing the layout of components.

No. of Terminals: 3

Having three terminals enables flexible connectivity options, accommodating different circuit configurations and functionalities.

Maximum Power Dissipation (Abs): 3.5 W

With a high power dissipation capability, this transistor can handle demanding applications without overheating or damage.

Maximum Collector-Emitter Voltage: 100 V

The high collector-emitter voltage rating allows for operation in circuits with higher voltage requirements, enhancing versatility.

Transistor Element Material: SILICON

Silicon material ensures reliable performance and stability, making the transistor suitable for a wide range of operating conditions.

Maximum Collector Current (IC): 2 A

The high collector current rating enables the transistor to handle substantial current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 300 MHz

The high transition frequency indicates fast switching speed, allowing for efficient operation in high-frequency circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA2202-TD-E attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-243

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA2202-TD-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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