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2SA2125-TD-E

Sanyo Semiconductor

2SA2125-TD-E by Sanyo Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.5 W; Maximum Collector Current (IC): 3 A; Moisture Sensitivity Level (MSL): 1;

Median Price

$0.394

Lifecycle Status

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18

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Arrow

USA . 5 parts In-Stock

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Farnell

UK . 1,194 parts In-Stock

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$0.464

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Element14

Singapore . 1,194 parts In-Stock

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$0.800

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$0.406

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$0.313

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$0.264

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DigiKey

USA . 3,584 parts In-Stock

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$0.830

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$0.333

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$0.254

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Mouser Electronics

USA . 1,101 parts In-Stock

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$0.333

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$0.215

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Rochester

USA . 21,713 parts In-Stock

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Verical

USA . 20,995 parts In-Stock

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Newark

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Chip1Stop

Japan . 5 parts In-Stock

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Digiode

USA . 162 parts In-Stock

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$0.122

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Nova Conductors

Japan . 24 parts In-Stock

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$0.224

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Flip Electronics

USA . 87,000 parts In-Stock

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Chip Stock

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IBS Electronics

USA . 25,000 parts In-Stock

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NAC Semi

USA . 20,000 parts In-Stock

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$0.440

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ACDS - Activité Composants Distribution Service

France . 5,000 parts In-Stock

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Vyrian

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Corphita

USA . 2,087 parts In-Stock

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Corohmni

South Africa . 368 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 1,205 parts In-Stock

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Aztec Data Supply Inc.

USA . 192 parts In-Stock

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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Kepictronics

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Lixinc

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

Austria . 6,112 parts In-Stock

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Cyclops Electronics Ltd (Excess)

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Problanco Electronics

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Kulean Microsystems

USA . 3,495 parts In-Stock

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TANS Electronics

Latvia . 1,232 parts In-Stock

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Authorized Procurement Solutions

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Continental Prestige Electronics

USA . 985 parts In-Stock

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UHIMA Technologies

Türkiye . 796 parts In-Stock

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GreenTree Electronics

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Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA2125-TD-E attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Sanyo Semiconductor

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

2SA2125-TD-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Sanyo Semiconductor

PHOENIX, Ariz. and TOKYO, Japan – Jan. 3, 2011 – ON Semiconductor Corporation (Nasdaq: ONNN) today announced the completion of the acquisition of SANYO Semiconductor Co., Ltd., a subsidiary of SANYO Electric, and other assets related to SANYO Electric’s semiconductor business, by ON Semiconductor. Under the terms of the purchase agreement, ON Semiconductor paid approximately ¥11.8 billion ($144 million) in cash to SANYO Electric and drew down approximately ¥31.7 billion ($378 million) under a loan agreement with SANYO Electric. “The combination with SANYO Semiconductor represents an important step in the continued transformation of ON Semiconductor into a premier global supplier of high-performance silicon solutions for energy efficient electronics,” said Keith Jackson, president and CEO of ON Semiconductor. “This acquisition enables us to expand wholeheartedly into the Japanese market and to capture growth on a global basis. We believe this acquisition will create immediate value for customers, partners and investors, and we are excited to welcome the employees of SANYO Semiconductor to the ON Semiconductor family.”

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