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2SA2223A-Y

Sanken Electric

2SA2223A-Y by Sanken Electric

2SA2223A-Y by Sanken Electric is a PNP BJT transistor with max. VCE of 260V, IC of 15A, and hFE of 70. Ideal for amplifier applications due to its high collector current and operating temperature up to 150°C. Package style is flange mount with through-hole terminals in a rectangular shape.

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Overview

Enhance the performance of your amplifier with the 2SA2223A-Y power bipolar junction transistor from Sanken Electric. Known for their high-quality electronic components, Sanken Electric delivers reliability and efficiency in every product they manufacture. Ideal for various amplifier applications, this PNP transistor offers a maximum collector-emitter voltage of 260V and a maximum collector current of 15A, ensuring optimal performance. Upgrade your electronics with the 2SA2223A-Y and experience the superior quality and value that Sanken Electric provides.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a lightweight yet durable package, making it suitable for various applications where portability and robustness are important.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits while providing efficient amplification capabilities.

Configuration: SINGLE

Simplified circuit design and ease of use for straightforward amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring high performance and reliability in amplification tasks.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 260 V

Capable of handling high voltage levels, making it versatile for a wide range of applications.

Minimum DC Current Gain (hFE): 70

Ensures high amplification capability and stability in the circuit.

Maximum Collector Current (IC): 15 A

Capable of handling high currents, making it suitable for power applications.

Nominal Transition Frequency (fT): 35 MHz

High transition frequency allows for efficient switching and amplification at high frequencies, suitable for RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA2223A-Y attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Sanken Electric

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

260 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA2223A-Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Sanken Electric

In 1937, as part of the 50th anniversary project of the former Toho Electric Power Co., Ltd., the Toho Industrial Research Institute was invited by the late Yasuzaemon Matsunaga, president of the company at the time, to develop industries that would actually benefit society. It was created with the intention of doing In 1946, the late Tetsuji Kotani, chief of the semiconductor research laboratory at the same research institute, established Toho Sanken Denki Co., Ltd., taking over the engineers and equipment of the research institute, which was dissolved after the end of the war. In 1962, the company name was changed to the current name, Sanken Electric Co., Ltd. Founded a factory specializing in semiconductors with the results of cuprous oxide and selenium rectifiers that have continued since the laboratory days. In 1958, we succeeded in making prototypes of thermal diffusion silicon diodes, which were groundbreaking in the world at the time, followed by silicon power transistors. Since then, we have grown together with the electronics industry, established a solid position as a manufacturer in the power electronics field, and grasped the changes of the times. We have provided solutions. We have been and will continue to supply unique and advanced products and strive to be a prominent innovator in the field of power electronics.

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