Loading...

2SA2016

Onsemi

2SA2016 by Onsemi

The Onsemi 2SA2016 is a PNP BJT with max. power dissipation of 3.5W, hFE of 200, and max. collector current of 7A. Ideal for high-power applications in electronics due to its single configuration and surface-mount capability, operating up to 150 °C efficiently.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,787 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,787

-

-

-

-

Cyclops Electronics Ltd

UK . 2,244 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,244

-

-

-

-

Digiode

USA . 631 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

631

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 921 parts In-Stock

1+ parts

$0.137

100+ parts

-

1k+ parts

-

10k+ parts

$0.132

921

$0.137

-

-

$0.132

Northwest PG Solutions

USA . 2,199 parts In-Stock

1+ parts

$0.151

100+ parts

-

1k+ parts

-

10k+ parts

$0.133

2,199

$0.151

-

-

$0.133

TANS Electronics

Latvia . 8,213 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,213

-

-

-

-

Problanco Electronics

Mexico . 7,343 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,343

-

-

-

-

SupplyDigital Components

Austria . 7,176 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,176

-

-

-

-

Glotronic Ltd.

UK . 2,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,900

-

-

-

-

Authorized Procurement Solutions

USA . 2,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,700

-

-

-

-

Kulean Microsystems

USA . 2,672 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,672

-

-

-

-

Corphita

USA . 1,692 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,692

-

-

-

-

UHIMA Technologies

Türkiye . 674 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

674

-

-

-

-

Corohmni

South Africa . 246 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

246

-

-

-

-

Overview

Unleash the power of innovation with the 2SA2016 by Onsemi! Crafted with precision and expertise, this PNP Power BJT offers unparalleled performance and reliability. Perfect for a variety of applications, from audio amplifiers to voltage regulators, this transistor delivers efficiency and effectiveness like never before. Elevate your projects with the quality and value that only Onsemi can provide. Upgrade to the 2SA2016 today and experience the difference for yourself.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are often used in high-power applications due to their ability to handle higher current levels compared to NPN transistors.

Configuration: SINGLE

Single configuration transistors are easier to use and design with, making them ideal for simpler circuits and projects.

Surface Mount: YES

Surface mount transistors are compact and can be easily integrated into densely populated PCBs, saving space and reducing assembly costs.

Maximum Power Dissipation (Abs): 3.5 W

With a maximum power dissipation of 3.5 W, this transistor can handle higher power levels, making it suitable for applications requiring greater output capabilities.

Minimum DC Current Gain (hFE): 200

A higher minimum DC current gain means the transistor is more efficient in amplifying current, providing better performance in signal amplification applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand higher temperature environments, increasing its reliability and lifespan in harsh conditions.

Maximum Collector Current (IC): 7 A

A high maximum collector current of 7 A allows the transistor to handle large current loads, making it suitable for high-power applications such as motor control or power amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA2016 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

7 A

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SA2016 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20