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2SA2223AY

Allegro MicroSystems

2SA2223AY by Allegro MicroSystems

Allegro MicroSystems' 2SA2223AY is a PNP BJT transistor with max. power dissipation of 160W, max. collector-emitter voltage of 260V, and max. collector current of 15A. Ideal for amplifier applications due to its high transition frequency of 35MHz and single terminal configuration in a rectangular package style.

Median Price

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Lifecycle Status

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1k+

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VNN

France . 655 parts In-Stock

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Nova Conductors

Japan . 600 parts In-Stock

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Ampacity Inc.

Singapore . 1,438 parts In-Stock

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$41.050

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Continental Prestige Electronics

USA . 8,360 parts In-Stock

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Argo Parts USA

USA . 3,971 parts In-Stock

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Aranea Global

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Overview

Discover the power and reliability of the Allegro MicroSystems 2SA2223AY Power Bipolar Junction Transistor. This high-quality PNP transistor is perfect for amplifier applications, offering a maximum collector-emitter voltage of 260V and a maximum collector current of 15A. With a package style of flange mount and a terminal finish of matte tin, this transistor provides exceptional performance in a variety of electronic devices. Trust Allegro MicroSystems for top-notch components that deliver outstanding results every time. Elevate your projects with the 2SA2223AY and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifiers and switching circuits, offering versatility in design.

Configuration: SINGLE

Simplifies circuit design and implementation, making it easier to integrate into electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, ensuring optimal performance in audio or signal processing applications.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement on circuit boards, saving space and enhancing overall design efficiency.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connections to other components, ensuring the stability and durability of the circuit.

Maximum Power Dissipation (Abs): 160 W

Allows for high power handling capacity, making it suitable for demanding applications where power dissipation is a concern.

Package Style (Meter): FLANGE MOUNT

Offers a secure mounting option for the transistor, ensuring stability and reliability in various operating conditions.

Minimum DC Current Gain (hFE): 70

Provides consistent and reliable amplification of input signals, maintaining signal integrity and fidelity.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without compromising performance, ensuring reliable operation in diverse environments.

Maximum Collector-Emitter Voltage: 260 V

Offers a high voltage rating, making it suitable for applications where higher voltage levels are required for operation.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and stable performance, ensuring long-term functionality in electronic circuits.

Maximum Collector Current (IC): 15 A

Capable of handling high current levels, making it suitable for applications that require robust current-carrying capacity.

Terminal Finish: MATTE TIN

Provides a corrosion-resistant and low-resistance surface finish, ensuring reliable electrical connections and longevity of the transistor.

Terminal Position: SINGLE

Simplifies the installation process and enhances the overall reliability of the connections, reducing the risk of circuit failures.

Nominal Transition Frequency (fT): 35 MHz

Indicates the speed at which the transistor can switch between on and off states, making it suitable for high-frequency applications such as radio frequency amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA2223AY attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Allegro MicroSystems

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

260 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA2223AY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Allegro MicroSystems

With more than 30 years of experience developing advanced semiconductor technology and application-specific algorithms, Allegro is a global leader in power and sensing solutions for motion control and energy-efficient systems. Through our innovations in e-Mobility, Clean Energy, and Automation, we are helping move the world toward a safer, more sustainable future. Each year we ship over one billion units into these applications to support our 10,000+ customers around the globe, including over 50 automotive OEMs. Our global engineering, manufacturing and support, combined with our agility, make Allegro a trusted partner to both large enterprises and regional market leaders worldwide.

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