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2SA2125-TD-H

Onsemi

2SA2125-TD-H by Onsemi

2SA2125-TD-H by Onsemi is a PNP BJT with 3A IC, 200 hFE, and 3.5W power dissipation. Ideal for applications requiring high current amplification in a surface-mount configuration. Operating up to 150°C, it suits power management systems and automotive electronics.

Median Price

$1.250

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 805 parts In-Stock

1+ parts

$1.140

100+ parts

$0.469

1k+ parts

$0.363

10k+ parts

-

805

$1.140

$0.469

$0.363

-

Mouser Electronics

USA . 1 parts In-Stock

1+ parts

$1.250

100+ parts

$0.506

1k+ parts

$0.349

10k+ parts

-

1

$1.250

$0.506

$0.349

-

Chip1Stop

Japan . 820 parts In-Stock

1+ parts

$2.660

100+ parts

$0.728

1k+ parts

$0.571

10k+ parts

-

820

$2.660

$0.728

$0.571

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,810 parts In-Stock

1+ parts

$0.636

100+ parts

-

1k+ parts

-

10k+ parts

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1,810

$0.636

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-

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Vyrian

USA . 1,728 parts In-Stock

1+ parts

$0.670

100+ parts

-

1k+ parts

-

10k+ parts

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1,728

$0.670

-

-

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$1.213

100+ parts

-

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-

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150

$1.213

-

-

-

Chip Stock

USA . 33,000 parts In-Stock

1+ parts

-

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33,000

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-

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Flip Electronics

USA . 17,000 parts In-Stock

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17,000

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NAC Semi

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.619

10k+ parts

$0.557

8,000

-

-

$0.619

$0.557

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,866 parts In-Stock

1+ parts

$0.603

100+ parts

-

1k+ parts

-

10k+ parts

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1,866

$0.603

-

-

-

Component Stockers USA

USA . 2,646 parts In-Stock

1+ parts

$0.620

100+ parts

$0.390

1k+ parts

$0.280

10k+ parts

-

2,646

$0.620

$0.390

$0.280

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Corohmni

South Africa . 382 parts In-Stock

1+ parts

$0.670

100+ parts

-

1k+ parts

-

10k+ parts

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382

$0.670

-

-

-

Native Components

USA . 418 parts In-Stock

1+ parts

$26.603

100+ parts

-

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-

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418

$26.603

-

-

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Northwest PG Solutions

USA . 528 parts In-Stock

1+ parts

$29.263

100+ parts

$26.336

1k+ parts

-

10k+ parts

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528

$29.263

$26.336

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-

Problanco Electronics

Mexico . 6,684 parts In-Stock

1+ parts

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6,684

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Kulean Microsystems

USA . 4,848 parts In-Stock

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4,848

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SupplyDigital Components

Austria . 4,610 parts In-Stock

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4,610

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Perfect Parts

USA . 2,979 parts In-Stock

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2,979

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TANS Electronics

Latvia . 2,103 parts In-Stock

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2,103

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Kepictronics

USA . 1,000 parts In-Stock

1+ parts

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1,000

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GreenTree Electronics

Israel . 920 parts In-Stock

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920

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Authorized Procurement Solutions

USA . 820 parts In-Stock

1+ parts

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100+ parts

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820

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UHIMA Technologies

Türkiye . 262 parts In-Stock

1+ parts

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262

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Overview

Enhance your electronic designs with the 2SA2125-TD-H Power Bipolar Junction Transistor by Onsemi. With a reputation for top-notch quality and reliability, Onsemi delivers superior performance in the PNP transistor category. This surface-mount single configuration device offers a maximum power dissipation of 3.5W and a minimum DC current gain of 200, making it ideal for a wide range of applications. Trust Onsemi to provide you with exceptional value, benefits, and advantages that will take your projects to the next level. Choose the 2SA2125-TD-H for unmatched quality and performance.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors allow for current to flow from collector to emitter when a positive voltage is applied to the base. This can be advantageous in certain circuit configurations.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into systems.

Surface Mount: YES

Surface mount capability allows for easier and more efficient PCB assembly.

Maximum Power Dissipation (Abs): 3.5 W

With a high power dissipation rating, this transistor can handle relatively high power levels without overheating, making it suitable for demanding applications.

Minimum DC Current Gain (hFE): 200

A high DC current gain indicates good amplification capabilities, allowing for accurate signal amplification in electronic circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance ensures reliable performance in potentially hot environments.

Maximum Collector Current (IC): 3 A

A high collector current rating allows for the handling of larger current loads, making the transistor versatile in various applications.

Terminal Finish: Tin/Bismuth (Sn/Bi)

Tin/Bismuth terminal finish provides good solderability and ensures a reliable electrical connection.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time helps to prevent damage to the component during the assembly process.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for proper solder melting and component attachment during PCB assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA2125-TD-H attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

2SA2125-TD-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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