Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Onsemi's 2SA2013 is a PNP BJT with max. power dissipation of 3.5W, hFE of 200, and max. collector current of 4A. Ideal for applications requiring high current amplification in a single configuration, such as power supplies or audio amplifiers operating up to 150 °C.
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The PNP polarity allows for easy compatibility with other PNP components in a circuit.
The single configuration simplifies circuit design and integration, making it easier to implement in various applications.
The surface mount option enables easy installation on PCBs, saving space and facilitating automated assembly processes.
With a high power dissipation capability of 3.5 W, this transistor can handle moderate to high power applications reliably.
The high minimum DC current gain ensures amplification of input signals with minimal distortion, enhancing overall performance.
The high maximum operating temperature of 150 °C allows for operation in a wide range of environments without risking thermal damage.
The high maximum collector current rating of 4 A enables the transistor to handle high current loads, making it suitable for power applications.
Power Bipolar Junction Transistors (BJT) 2SA2013 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi
Maximum Collector Current (IC):
Configuration:
Minimum DC Current Gain (hFE):
No. of Elements:
Maximum Operating Temperature:
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
2SA2013 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LM107H/883
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
STM32H753BIT6
STMicroelectronics
STM32H753BIT6 by STMicroelectronics is a 32-bit microcontroller with 208 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs, 2-Ch 12-Bit DACs, and extensive peripherals for industrial applications like CAN, Ethernet, and USB connectivity. With a wide temperature range of -40 to +85 °C, it's ideal for demanding environments requiring high-speed processing capabilities.
LM358N
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
1N4148WS
Sinyork
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; No. of Elements: 1; Maximum Output Current: .2 A; Config: SINGLE;
261
Deltrol Controls
Other Relays;
CL31B104KBCNNNC
Samsung Electro-mechanics
Samsung Electro-mechanics CL31B104KBCNNNC is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It features X7R temperature characteristics, -55 to 125 °C operating range, and compact SMT package style. Ideal for applications requiring high reliability in compact electronic devices.
1N4148
Capar Components
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Forward Voltage (VF): 1 V; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Output Current: .15 A;
IRLML6402TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE;
BSS138
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;
SMBJ18CA
Transpro Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Breakdown Voltage: 21.1 V; Maximum Clamping Voltage: 29.2 V;
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WT
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
B340A-13-F
Diodes Incorporated
B340A-13-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 3A max output current, and 0.5V max forward voltage. It is used for efficiency applications in electronics due to its small outline package and high operating temperature range of -55°C to 150°C.
Micro Commercial Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Position: DUAL;
2N7002
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;
LM2675M-ADJ/NOPB
Texas Instruments
LM2675M-ADJ/NOPB by Texas Instruments is a voltage-mode switching regulator with 1A output current, 37V max output voltage, and 260kHz max switching frequency. Ideal for automotive applications due to its -40°C to 125°C operating temperature range and compact small outline package design.
FDC5614P
MSKSEMI SEMICONDUCTOR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;
LL4148
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAV99
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BD679AS
NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
MJE340G
Onsemi
MJE340G by Onsemi is a NPN BJT with 300V VCEO, 20W Ptot, and hFE of 30. Ideal for power applications due to its high voltage rating and low collector current. Its single configuration and through-hole terminals make it suitable for various electronic designs.
MJD44H11-1G
MJD44H11-1G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a min hFE of 40 and operates up to 150°C. The package style is IN-LINE with through-hole terminals in a rectangular shape.
MJE340
Tt Electronics Plc
NPN; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Finish: TIN LEAD; Package Shape: RECTANGULAR; Package Style (Meter): FLANGE MOUNT;
TIP127
Samsung
PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JEDEC-95 Code: TO-220AB;
BD138
Central Semiconductor
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP41CN
Motorola
TIP41CN by Motorola is a NPN power BJT with 100V VCE, 6A IC, and 65W Pd. Ideal for switching applications, it has hFE of 15 and fT of 3MHz. The transistor comes in a plastic/epoxy package with flange mount style and through-hole terminals.
BDX53C
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
BD139-10
Continental Device India
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
TIP120
Semitronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; No. of Elements: 1;
TIP122
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Moisture Sensitivity Level (MSL): 1; JESD-30 Code: R-PSFM-T3;
TIP35C
Nte Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Transistor Application: SWITCHING;
BDW93C
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; Package Body Material: PLASTIC/EPOXY;
2N3055
Aeroflex/metelics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 5; Package Body Material: METAL;
BD139
Shanghai Lunsure Electronic Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; No. of Terminals: 3;
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;
TIP115
PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Maximum Collector Current (IC): 5 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 100 V; Minimum DC Current Gain (hFE): 1000;
TIP42A
Inchange Semiconductor
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BD679AG
BD679AG by Onsemi is a NPN Power BJT with 40W power dissipation, 750 min hFE, and 80V VCE. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.
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2SA2125-TD-E
Sanyo Semiconductor
PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.5 W; Maximum Collector Current (IC): 3 A; Moisture Sensitivity Level (MSL): 1;
PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.5 W; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 200;
2SA2016-TD-E
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 290 MHz; Maximum Collector Current (IC): 7 A; JEDEC-95 Code: TO-243AA;
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 290 MHz; Maximum Collector Current (IC): 7 A; Transistor Application: SWITCHING;
2SA2210-1E
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): 20 A; Terminal Position: SINGLE;
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): 20 A; JEDEC-95 Code: TO-220AB;
2SA2223AY
Allegro MicroSystems
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 35 MHz; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 15 A;
2SA2223A-Y
Sanken Electric
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 35 MHz; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON;
2SA2023
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 5 A; Terminal Form: THROUGH-HOLE;
2SA2031
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 15 A; No. of Elements: 1;
2SA2124-TD-E
Onsemi's 2SA2124-TD-E is a PNP BJT transistor with max. power dissipation of 3.5W, hFE of 65, and max. collector current of 2A. Ideal for switching applications, it operates at up to 150°C and has a max. collector-emitter voltage of 30V.
2SA2016
PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.5 W; Maximum Collector Current (IC): 7 A; No. of Elements: 1;
2SA2180
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): 5 A; Terminal Form: THROUGH-HOLE;
2SA2202-TD-E
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 3.5 W; Maximum Collector Current (IC): 2 A;
2SA2037
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 290 MHz; Maximum Collector Current (IC): 7 A; Minimum DC Current Gain (hFE): 150;
2SA2099
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): 10 A; Package Shape: RECTANGULAR;
2SA2125-TD-H
PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.5 W; Maximum Collector Current (IC): 3 A; Peak Reflow Temperature (C): 260;
2SA2013-TD-E
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 360 MHz; Maximum Collector Current (IC): 4 A; JEDEC-95 Code: TO-243AA;
2SA2210
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): 20 A; Transistor Element Material: SILICON;
2SA2014
Sanyo Electric
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): 3.5 W; Maximum Collector Current (IC): 9 A;
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