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2SA2125-TD-E

Onsemi

2SA2125-TD-E by Onsemi

2SA2125-TD-E by Onsemi is a PNP BJT with 3A IC, 200 hFE, and 3.5W power dissipation. Ideal for applications requiring high current amplification in a surface-mount configuration up to 150°C, such as power supplies or audio amplifiers.

Median Price

$0.394

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 5 parts In-Stock

1+ parts

$0.128

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-

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5

$0.128

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Farnell

UK . 1,194 parts In-Stock

1+ parts

$0.464

100+ parts

$0.196

1k+ parts

$0.129

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-

1,194

$0.464

$0.196

$0.129

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Element14

Singapore . 1,194 parts In-Stock

1+ parts

$0.800

100+ parts

$0.406

1k+ parts

$0.313

10k+ parts

$0.264

1,194

$0.800

$0.406

$0.313

$0.264

DigiKey

USA . 3,584 parts In-Stock

1+ parts

$0.830

100+ parts

$0.333

1k+ parts

$0.254

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3,584

$0.830

$0.333

$0.254

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Mouser Electronics

USA . 1,101 parts In-Stock

1+ parts

$0.830

100+ parts

$0.333

1k+ parts

$0.215

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1,101

$0.830

$0.333

$0.215

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Rochester

USA . 21,713 parts In-Stock

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$0.194

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$0.161

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$0.143

21,713

-

$0.194

$0.161

$0.143

Verical

USA . 20,995 parts In-Stock

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$0.179

20,995

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$0.179

Flip Electronics (Authorized)

USA . 8,000 parts In-Stock

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8,000

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Newark

USA . 255 parts In-Stock

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$0.323

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$0.221

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255

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$0.323

$0.221

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Chip1Stop

Japan . 5 parts In-Stock

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5

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Distributors (In-Stock)

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Digiode

USA . 162 parts In-Stock

1+ parts

$0.122

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162

$0.122

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Nova Conductors

Japan . 24 parts In-Stock

1+ parts

$0.224

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24

$0.224

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Flip Electronics

USA . 87,000 parts In-Stock

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Chip Stock

USA . 38,500 parts In-Stock

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38,500

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IBS Electronics

USA . 25,000 parts In-Stock

1+ parts

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$0.309

10k+ parts

$0.302

25,000

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-

$0.309

$0.302

NAC Semi

USA . 20,000 parts In-Stock

1+ parts

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$0.440

20,000

-

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$0.440

ACDS - Activité Composants Distribution Service

France . 5,000 parts In-Stock

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5,000

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Vyrian

USA . 1,938 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,087 parts In-Stock

1+ parts

$0.115

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2,087

$0.115

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Corohmni

South Africa . 368 parts In-Stock

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$0.128

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368

$0.128

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.220

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$0.211

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2,000

$0.220

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$0.211

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Argo Parts USA

USA . 1,205 parts In-Stock

1+ parts

$0.224

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$0.217

1,205

$0.224

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$0.217

Aztec Data Supply Inc.

USA . 192 parts In-Stock

1+ parts

$1.114

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192

$1.114

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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Kepictronics

USA . 19,190 parts In-Stock

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Lixinc

USA . 16,767 parts In-Stock

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Perfect Parts

USA . 12,320 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 9,088 parts In-Stock

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SupplyDigital Components

Austria . 6,112 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 5,000 parts In-Stock

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Problanco Electronics

Mexico . 3,959 parts In-Stock

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Kulean Microsystems

USA . 3,495 parts In-Stock

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TANS Electronics

Latvia . 1,232 parts In-Stock

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Authorized Procurement Solutions

USA . 1,064 parts In-Stock

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1,064

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Continental Prestige Electronics

USA . 985 parts In-Stock

1+ parts

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$0.232

1k+ parts

$0.129

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985

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$0.232

$0.129

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UHIMA Technologies

Türkiye . 796 parts In-Stock

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796

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GreenTree Electronics

Israel . 214 parts In-Stock

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214

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Overview

Discover the power and performance of the 2SA2125-TD-E by Onsemi, a top-tier manufacturer known for producing high-quality Power Bipolar Junction Transistors. This PNP transistor offers a single configuration design, making it ideal for a wide range of applications. With a maximum collector current of 3A and a minimum DC current gain of 200, this transistor delivers exceptional reliability and efficiency. Trust Onsemi to provide you with cutting-edge technology that enhances your products and projects. Choose the 2SA2125-TD-E for superior performance and unmatched value.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are often used in high-power applications due to their ability to switch high current loads.

Configuration: SINGLE

Single configuration transistors are simpler to use and are ideal for applications that do not require complex circuit designs.

Surface Mount: YES

Surface mount transistors are easy to install and save space on the circuit board, making them ideal for compact designs.

Maximum Power Dissipation (Abs): 3.5 W

With a maximum power dissipation of 3.5W, this transistor can handle high power applications without overheating.

Minimum DC Current Gain (hFE): 200

A minimum DC current gain of 200 ensures amplification of the input signal, making this transistor suitable for use in signal amplification circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, making it suitable for industrial applications.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3A, this transistor can handle high current loads, making it ideal for power control applications.

Terminal Finish: Tin/Bismuth (Sn/Bi)

The tin/bismuth terminal finish provides good solderability and ensures a reliable electrical connection, making this transistor easy to work with during assembly.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, this transistor can withstand the soldering process without damage.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures that the solder joints are properly formed, resulting in a reliable connection between the transistor and the circuit board.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA2125-TD-E attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

2SA2125-TD-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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