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2SA2210-1E

Onsemi

2SA2210-1E by Onsemi

2SA2210-1E by Onsemi is a PNP BJT transistor with hFE of 150, VCE of 50V, and IC of 20A. Ideal for switching applications due to its high current capacity and frequency response up to 140MHz. Comes in a rectangular package with through-hole terminals for easy mounting.

Median Price

$1.771

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 40 parts In-Stock

1+ parts

$0.229

100+ parts

$0.229

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$0.229

10k+ parts

$0.229

40

$0.229

$0.229

$0.229

$0.229

Farnell

UK . 41 parts In-Stock

1+ parts

$1.771

100+ parts

$1.025

1k+ parts

$0.672

10k+ parts

$0.663

41

$1.771

$1.025

$0.672

$0.663

Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$1.783

100+ parts

$1.623

1k+ parts

$1.462

10k+ parts

-

1,000

$1.783

$1.623

$1.462

-

Element14

Singapore . 41 parts In-Stock

1+ parts

$2.131

100+ parts

$1.297

1k+ parts

$1.084

10k+ parts

$0.988

41

$2.131

$1.297

$1.084

$0.988

Mouser Electronics

USA . 290 parts In-Stock

1+ parts

$2.650

100+ parts

$1.150

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-

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290

$2.650

$1.150

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Master Electronics

USA . 950 parts In-Stock

1+ parts

-

100+ parts

$1.601

1k+ parts

$1.033

10k+ parts

$0.958

950

-

$1.601

$1.033

$0.958

Verical

USA . 950 parts In-Stock

1+ parts

-

100+ parts

$1.882

1k+ parts

$1.306

10k+ parts

-

950

-

$1.882

$1.306

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Rochester

USA . 147 parts In-Stock

1+ parts

-

100+ parts

$0.922

1k+ parts

$0.765

10k+ parts

$0.682

147

-

$0.922

$0.765

$0.682

Flip Electronics (Authorized)

USA . 50 parts In-Stock

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-

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50

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RS (Exports)

UK . 25 parts In-Stock

1+ parts

-

100+ parts

$1.237

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25

-

$1.237

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Distributors (In-Stock)

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Digiode

USA . 2,238 parts In-Stock

1+ parts

$0.562

100+ parts

-

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2,238

$0.562

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Nova Conductors

Japan . 22 parts In-Stock

1+ parts

$1.058

100+ parts

-

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22

$1.058

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Chip Stock

USA . 26,000 parts In-Stock

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26,000

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IBS Electronics

USA . 350 parts In-Stock

1+ parts

-

100+ parts

$1.017

1k+ parts

$0.961

10k+ parts

$0.919

350

-

$1.017

$0.961

$0.919

NAC Semi

USA . 300 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$1.450

10k+ parts

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300

-

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$1.450

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Cogito LLC

Ukraine . 100 parts In-Stock

1+ parts

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100

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Vyrian

USA . 83 parts In-Stock

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83

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Flip Electronics

USA . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 644 parts In-Stock

1+ parts

$0.533

100+ parts

-

1k+ parts

-

10k+ parts

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644

$0.533

-

-

-

Corohmni

South Africa . 258 parts In-Stock

1+ parts

$0.899

100+ parts

-

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-

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258

$0.899

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Argo Parts USA

USA . 5,394 parts In-Stock

1+ parts

$1.058

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5,394

$1.058

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Continental Prestige Electronics

USA . 2,271 parts In-Stock

1+ parts

$1.058

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$1.037

2,271

$1.058

-

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$1.037

Netroflash

USA . 500 parts In-Stock

1+ parts

$1.058

100+ parts

-

1k+ parts

$1.006

10k+ parts

$0.984

500

$1.058

-

$1.006

$0.984

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$1.783

100+ parts

$1.623

1k+ parts

$1.462

10k+ parts

-

1,000

$1.783

$1.623

$1.462

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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TANS Electronics

Latvia . 6,520 parts In-Stock

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Kulean Microsystems

USA . 5,190 parts In-Stock

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Problanco Electronics

Mexico . 5,160 parts In-Stock

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SupplyDigital Components

Austria . 2,600 parts In-Stock

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2,600

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UHIMA Technologies

Türkiye . 918 parts In-Stock

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918

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Overview

Unleash the power of innovation with the Onsemi 2SA2210-1E Power Bipolar Junction Transistor. Manufactured by a trusted industry leader, this PNP transistor offers unparalleled quality and reliability for switching applications. With a maximum collector-emitter voltage of 50V and a maximum collector current of 20A, this transistor delivers exceptional performance in a compact, flange mount package. Experience seamless operation and efficiency with the 2SA2210-1E, providing unmatched value and benefits for your electronic projects. Elevate your designs with the cutting-edge technology of Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required for proper circuit operation.

Configuration: SINGLE

Simplified design with a single transistor in the package, making it easier to manage in circuit layouts.

Transistor Application: SWITCHING

Optimized for switching applications, offering fast switching speeds and efficient power handling.

Package Shape: RECTANGULAR

Space-efficient design that allows for compact integration into circuits.

Terminal Form: THROUGH-HOLE

Easy to solder and mount on PCBs, providing a secure and reliable connection.

No. of Terminals: 3

Simple 3-terminal setup for straightforward circuit connections.

Package Style (Meter): FLANGE MOUNT

Convenient flange mount style for secure installation in various applications.

Minimum DC Current Gain (hFE): 150

High current gain for stable and consistent transistor operation.

Maximum Collector-Emitter Voltage: 50 V

Sufficient voltage rating for many low to medium power applications.

Transistor Element Material: SILICON

Silicon material offers good performance and reliability for the transistor element.

Maximum Collector Current (IC): 20 A

Capable of handling high collector currents for power applications.

Terminal Finish: Matte Tin (Sn) - annealed

Durable terminal finish for long-term reliability and soldering ease.

Terminal Position: SINGLE

Single terminal position for straightforward connections in the circuit.

Case Connection: ISOLATED

Helps in preventing unwanted coupling between the transistor case and the circuit, enhancing safety and performance.

Nominal Transition Frequency (fT): 140 MHz

High transition frequency for fast switching speeds and high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA2210-1E attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

150

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA2210-1E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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