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2SA2031

Onsemi

2SA2031 by Onsemi

2SA2031 by Onsemi is a PNP BJT transistor with hFE of 35, VCE of 230V, and IC of 15A. Ideal for amplifier applications due to its silicon material and flange mount package style. Suitable for high-power circuit designs requiring a single-terminal through-hole configuration.

Median Price

$0.587

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 40 parts In-Stock

1+ parts

$1.273

100+ parts

$1.158

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$1.044

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40

$1.273

$1.158

$1.044

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Rochester

USA . 2,567 parts In-Stock

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-

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$0.515

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$0.428

10k+ parts

$0.381

2,567

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$0.515

$0.428

$0.381

DigiKey

USA . 2,567 parts In-Stock

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$0.640

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2,567

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$0.640

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Verical

USA . 1,500 parts In-Stock

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$0.534

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$0.534

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Distributors (In-Stock)

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Freelance Electronics

USA . 200 parts In-Stock

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$0.341

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$0.358

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$0.338

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200

$0.341

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$0.338

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Vyrian

USA . 1,784 parts In-Stock

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$0.349

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Digiode

USA . 2,498 parts In-Stock

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$0.401

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2,498

$0.401

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Chip Stock

USA . 2,806 parts In-Stock

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DigiKey Marketplace

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2,677

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Corohmni

South Africa . 229 parts In-Stock

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$0.341

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229

$0.341

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Corphita

USA . 387 parts In-Stock

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$0.380

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387

$0.380

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Component Stockers USA

USA . 1,578 parts In-Stock

1+ parts

$0.430

100+ parts

$0.410

1k+ parts

$0.370

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1,578

$0.430

$0.410

$0.370

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$1.273

100+ parts

$1.158

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$1.044

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40

$1.273

$1.158

$1.044

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Kepictronics

USA . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 8,288 parts In-Stock

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Kulean Microsystems

USA . 6,161 parts In-Stock

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TANS Electronics

Latvia . 5,339 parts In-Stock

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Continental Prestige Electronics

USA . 2,051 parts In-Stock

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$0.349

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2,051

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$0.349

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Northwest PG Solutions

USA . 369 parts In-Stock

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369

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UHIMA Technologies

Türkiye . 344 parts In-Stock

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344

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Native Components

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Problanco Electronics

Mexico . 197 parts In-Stock

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Overview

Elevate your amplifier designs with the 2SA2031 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJT) like the 2SA2031, known for its reliability and performance. This PNP transistor offers customers exceptional value and benefits, with a maximum collector-emitter voltage of 230V and a maximum collector current of 15A. Whether you're working on audio amplifiers or power supplies, the 2SA2031 is the perfect choice for your next project. Trust Onsemi to provide you with the tools you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight yet durable, making the transistor easy to handle and resistant to damage during assembly or operation.

Polarity or Channel Type: PNP

The PNP configuration allows for high speed switching and amplification of signals, making it suitable for various amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to integrate into a circuit board.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and reliability in amplifying signals.

Maximum Collector-Emitter Voltage: 230 V

With a high maximum voltage rating, this transistor can handle higher voltage circuits without malfunctioning or breaking down.

Maximum Collector Current (IC): 15 A

Capable of handling high current loads, making it suitable for power applications that require high current amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA2031 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

230 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA2031 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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