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2SA2013-TD-E

Onsemi

2SA2013-TD-E by Onsemi

The Onsemi 2SA2013-TD-E is a PNP BJT transistor with max. VCE of 50V and IC of 4A. Ideal for switching applications, it has a min. hFE of 200 and fT of 360MHz. Its small outline package makes it suitable for surface mount designs.

Median Price

$0.408

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1 parts In-Stock

1+ parts

$0.057

100+ parts

-

1k+ parts

-

10k+ parts

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1

$0.057

-

-

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Chip1Stop

Japan . 1 parts In-Stock

1+ parts

$0.076

100+ parts

-

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-

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1

$0.076

-

-

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Farnell

UK . 5,372 parts In-Stock

1+ parts

$0.802

100+ parts

$0.327

1k+ parts

$0.227

10k+ parts

$0.222

5,372

$0.802

$0.327

$0.227

$0.222

DigiKey

USA . 441 parts In-Stock

1+ parts

$1.030

100+ parts

$0.419

1k+ parts

$0.322

10k+ parts

-

441

$1.030

$0.419

$0.322

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Mouser Electronics

USA . 352 parts In-Stock

1+ parts

$1.030

100+ parts

$0.419

1k+ parts

$0.274

10k+ parts

-

352

$1.030

$0.419

$0.274

-

Element14

Singapore . 5,372 parts In-Stock

1+ parts

$1.410

100+ parts

$0.574

1k+ parts

$0.397

10k+ parts

$0.390

5,372

$1.410

$0.574

$0.397

$0.390

Verical

USA . 147,000 parts In-Stock

1+ parts

-

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$0.242

147,000

-

-

-

$0.242

Newark

USA . 3,205 parts In-Stock

1+ parts

-

100+ parts

$0.408

1k+ parts

$0.282

10k+ parts

-

3,205

-

$0.408

$0.282

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Rochester

USA . 650 parts In-Stock

1+ parts

-

100+ parts

$0.262

1k+ parts

$0.217

10k+ parts

$0.194

650

-

$0.262

$0.217

$0.194

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,403 parts In-Stock

1+ parts

$0.072

100+ parts

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1,403

$0.072

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Vyrian

USA . 1,874 parts In-Stock

1+ parts

$0.076

100+ parts

-

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10k+ parts

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1,874

$0.076

-

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Maritex

Poland . 1,174 parts In-Stock

1+ parts

$1.853

100+ parts

$1.118

1k+ parts

$0.945

10k+ parts

-

1,174

$1.853

$1.118

$0.945

-

Cyclops Electronics Ltd

UK . 80,000 parts In-Stock

1+ parts

-

100+ parts

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80,000

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-

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LIBRA Elektronik GmbH

Germany . 37,764 parts In-Stock

1+ parts

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37,764

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Chip Stock

USA . 21,000 parts In-Stock

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21,000

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Flip Electronics

USA . 3,000 parts In-Stock

1+ parts

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3,000

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ACDS - Activité Composants Distribution Service

France . 87 parts In-Stock

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87

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,433 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

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10k+ parts

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2,433

$0.068

-

-

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Corohmni

South Africa . 60 parts In-Stock

1+ parts

$0.076

100+ parts

-

1k+ parts

-

10k+ parts

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60

$0.076

-

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Native Components

USA . 423 parts In-Stock

1+ parts

$2.050

100+ parts

-

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423

$2.050

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Northwest PG Solutions

USA . 1,381 parts In-Stock

1+ parts

$2.255

100+ parts

-

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1,381

$2.255

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

1+ parts

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306,000

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Continental Prestige Electronics

USA . 160,800 parts In-Stock

1+ parts

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$0.247

10k+ parts

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160,800

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-

$0.247

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Perfect Parts

USA . 108,696 parts In-Stock

1+ parts

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108,696

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RC Electronics

USA . 64,051 parts In-Stock

1+ parts

-

100+ parts

$0.300

1k+ parts

$0.270

10k+ parts

$0.270

64,051

-

$0.300

$0.270

$0.270

QUARKTWIN TECHNOLOGY LTD

USA . 25,737 parts In-Stock

1+ parts

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25,737

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Kepictronics

USA . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 5,526 parts In-Stock

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5,526

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TANS Electronics

Latvia . 5,249 parts In-Stock

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5,249

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Kulean Microsystems

USA . 4,857 parts In-Stock

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4,857

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SupplyDigital Components

Austria . 3,945 parts In-Stock

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3,945

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Authorized Procurement Solutions

USA . 3,081 parts In-Stock

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3,081

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Eastek

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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$0.290

10k+ parts

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3,000

-

-

$0.290

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GreenTree Electronics

Israel . 3,000 parts In-Stock

1+ parts

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3,000

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Allen Electronics Distributors

USA . 1,600 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.313

10k+ parts

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1,600

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-

$0.313

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UHIMA Technologies

Türkiye . 456 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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456

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Overview

Unlock the power of innovation with the 2SA2013-TD-E by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors designed for switching applications. This PNP transistor offers a maximum collector-emitter voltage of 50V and a minimum DC current gain of 200, ensuring reliable performance. With surface mount capabilities and a small outline package style, this transistor is versatile and easy to integrate into your projects. Trust Onsemi for superior products that bring value and efficiency to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulating properties and helps protect the transistor from external factors, making it durable and reliable.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching circuits, making this product suitable for various electronic applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into different systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in controlling electronic signals.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting on circuit boards, reducing assembly time and improving reliability.

Package Shape: RECTANGULAR

Rectangular shape provides a compact design, saving space on the circuit board and enabling dense packing of components.

Terminal Form: FLAT

Flat terminals make it easier to solder and connect the transistor in the circuit, ensuring a secure and stable connection.

No. of Terminals: 3

Three terminals provide necessary connections for the transistor to function, offering versatility in circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board and enables high-density mounting of components, ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain ensures reliable amplification of signals in the circuit, enhancing overall performance.

Maximum Collector-Emitter Voltage: 50 V

High maximum collector-emitter voltage rating provides a wide voltage handling capability, making it suitable for various voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon material offers good electrical properties, high temperature tolerance, and low leakage current, enhancing the transistor's overall efficiency.

Maximum Collector Current (IC): 4 A

High maximum collector current rating allows the transistor to handle high currents, making it suitable for power switching applications.

Terminal Finish: Tin/Bismuth (Sn/Bi)

Tin/bismuth terminal finish provides good solderability and corrosion resistance, ensuring stable connections and long-term reliability.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections, allowing for various mounting orientations and configurations.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature minimizes the risk of thermal damage during the soldering process, preserving the transistor's performance.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance ensures reliability during the soldering process, making the transistor suitable for lead-free soldering.

Nominal Transition Frequency (fT): 360 MHz

High nominal transition frequency allows for fast switching speeds and high-frequency operation, making it ideal for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA2013-TD-E attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA2013-TD-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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