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2SA2023

Onsemi

2SA2023 by Onsemi

The Onsemi 2SA2023 is a PNP BJT transistor with max. Vce of 60V and max. Ic of 5A. With hFE of 110, it's ideal for switching applications at a frequency of 100MHz. This through-hole transistor in plastic/epoxy package is commonly used in isolated case connections for flange mount setups.

Median Price

$0.480

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 30,599 parts In-Stock

1+ parts

-

100+ parts

$0.462

1k+ parts

$0.384

10k+ parts

$0.342

30,599

-

$0.462

$0.384

$0.342

DigiKey

USA . 30,599 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.580

10k+ parts

-

30,599

-

-

$0.580

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Verical

USA . 27,599 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.480

10k+ parts

$0.428

27,599

-

-

$0.480

$0.428

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,302 parts In-Stock

1+ parts

$0.309

100+ parts

-

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1,302

$0.309

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Digiode

USA . 2,152 parts In-Stock

1+ parts

$0.360

100+ parts

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2,152

$0.360

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Chip Stock

USA . 58,000 parts In-Stock

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58,000

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DigiKey Marketplace

USA . 30,599 parts In-Stock

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30,599

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R&J Components

USA . 8,000 parts In-Stock

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8,000

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ACDS - Activité Composants Distribution Service

France . 2,000 parts In-Stock

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2,000

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MISTER SPROCKETS

USA . 97 parts In-Stock

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97

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LittleDiode

UK . 1 parts In-Stock

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1

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Distributors (Availability)

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Corohmni

South Africa . 182 parts In-Stock

1+ parts

$0.309

100+ parts

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182

$0.309

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Corphita

USA . 420 parts In-Stock

1+ parts

$0.341

100+ parts

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420

$0.341

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Continental Prestige Electronics

USA . 30,599 parts In-Stock

1+ parts

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100+ parts

$0.309

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30,599

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$0.309

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QUARKTWIN TECHNOLOGY LTD

USA . 16,896 parts In-Stock

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16,896

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Metaverse IC Inc.

Canada . 12,190 parts In-Stock

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12,190

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Kepictronics

USA . 10,190 parts In-Stock

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10,190

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RTC Component Inc.

USA . 8,000 parts In-Stock

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8,000

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Problanco Electronics

Mexico . 3,932 parts In-Stock

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3,932

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TANS Electronics

Latvia . 3,876 parts In-Stock

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3,876

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SupplyDigital Components

Austria . 3,622 parts In-Stock

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3,622

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Kulean Microsystems

USA . 3,013 parts In-Stock

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3,013

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Northwest PG Solutions

USA . 2,368 parts In-Stock

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2,368

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UHIMA Technologies

Türkiye . 684 parts In-Stock

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684

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Native Components

USA . 258 parts In-Stock

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258

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Overview

Looking for a reliable power solution? Look no further than the 2SA2023 by Onsemi. With a reputation for high-quality manufacturing, Onsemi delivers top-notch Power Bipolar Junction Transistors like the 2SA2023. Ideal for switching applications, this PNP transistor offers a maximum collector-emitter voltage of 60V and a maximum collector current of 5A. Say goodbye to unreliable power sources and hello to dependable performance with the 2SA2023. Trust Onsemi to provide the quality you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor components, ensuring reliability and longevity.

Polarity or Channel Type: PNP

Allows for easy integration with existing PNP transistor circuits and components.

Configuration: SINGLE

Simplified design and easy implementation in circuits requiring a single transistor.

Transistor Application: SWITCHING

Optimized for switching applications, ensuring efficient performance and minimal power consumption.

Package Shape: RECTANGULAR

Space-efficient design for easy mounting and integration into electronic devices.

Terminal Form: THROUGH-HOLE

Provides secure and reliable connections for through-hole PCB mounting.

No. of Terminals: 3

Simple and straightforward connectivity for basic transistor circuits.

Package Style (Meter): FLANGE MOUNT

Allows for easy and secure mounting on a surface, ensuring stability in the application.

Minimum DC Current Gain (hFE): 110

Provides consistent and reliable amplification of input signals.

Maximum Collector-Emitter Voltage: 60 V

Suitable for applications requiring up to 60 volts of collector-emitter voltage.

Transistor Element Material: SILICON

Offers high reliability, low leakage, and excellent performance characteristics.

Maximum Collector Current (IC): 5 A

Capable of handling high collector currents, making it suitable for power applications.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Simplified design for easy integration into circuits.

Case Connection: ISOLATED

Prevents interference and ensures stable operation in circuits.

Nominal Transition Frequency (fT): 100 MHz

Suitable for high-frequency applications, ensuring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA2023 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

110

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA2023 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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