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2SA2037

Onsemi

2SA2037 by Onsemi

Onsemi's 2SA2037 is a PNP BJT transistor with max. Vce of 50V and max. Ic of 7A. With hFE of 150, it's ideal for switching applications at a frequency of 290MHz in a through-hole package style.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

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Digiode

USA . 1,595 parts In-Stock

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Native Components

USA . 738 parts In-Stock

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Kepictronics

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SupplyDigital Components

Austria . 4,409 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 3,216 parts In-Stock

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TANS Electronics

Latvia . 1,755 parts In-Stock

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Corphita

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Problanco Electronics

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Corohmni

South Africa . 339 parts In-Stock

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UHIMA Technologies

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Northwest PG Solutions

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Overview

Elevate your electronics projects with the 2SA2037 by Onsemi, a high-quality Power Bipolar Junction Transistor perfect for switching applications. With its single PNP configuration and robust construction, this transistor offers exceptional performance and reliability. From flange mount packaging to a maximum collector current of 7A, this product delivers value and versatility. Trust in Onsemi's reputation for excellence and choose the 2SA2037 for all your power transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and resistant to heat, making the transistor reliable for long-term use in various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power switching applications, making this product suitable for applications that require efficient power control.

Configuration: SINGLE

Single configuration transistors are easy to use and ideal for simple switch applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for fast switching speeds and low power loss.

Package Shape: RECTANGULAR

Rectangular packages are easy to mount on circuit boards, allowing for efficient use of space and keeping the overall footprint of the circuit small.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and are ideal for applications where high reliability is required.

Minimum DC Current Gain (hFE): 150

A high DC current gain ensures stable and predictable performance in a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum voltage rating, this transistor can handle higher voltages, making it suitable for a variety of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them suitable for a wide range of electronic applications.

Maximum Collector Current (IC): 7 A

The high collector current rating allows this transistor to handle higher power levels, making it suitable for applications that require a high current capability.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

The terminal finish provides good conductivity and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: SINGLE

A single terminal position simplifies the installation and connection process, making this transistor easy to integrate into circuits.

Nominal Transition Frequency (fT): 290 MHz

With a high transition frequency, this transistor is capable of operating at high speeds, making it suitable for applications that require fast switching.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA2037 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

150

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA2037 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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