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2SA2180

Onsemi

2SA2180 by Onsemi

The Onsemi 2SA2180 is a PNP power BJT with max. Vce of 50V and max. Ic of 5A. It has a min. hFE of 50 and fT of 130MHz, ideal for switching applications in various industries due to its single configuration and through-hole terminal form.

Median Price

$0.291

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 16,000 parts In-Stock

1+ parts

-

100+ parts

$0.291

1k+ parts

$0.241

10k+ parts

$0.215

16,000

-

$0.291

$0.241

$0.215

DigiKey

USA . 16,000 parts In-Stock

1+ parts

-

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$0.360

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16,000

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-

$0.360

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Verical

USA . 16,000 parts In-Stock

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$0.269

16,000

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$0.269

Distributors (In-Stock)

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Digiode

USA . 2,406 parts In-Stock

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$0.226

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2,406

$0.226

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Vyrian

USA . 1,595 parts In-Stock

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$0.238

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1,595

$0.238

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Chip Stock

USA . 57,000 parts In-Stock

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DigiKey Marketplace

USA . 2,883 parts In-Stock

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Corphita

USA . 1,383 parts In-Stock

1+ parts

$0.214

100+ parts

-

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1,383

$0.214

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Corohmni

South Africa . 427 parts In-Stock

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$0.238

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427

$0.238

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QUARKTWIN TECHNOLOGY LTD

USA . 20,438 parts In-Stock

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20,438

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TANS Electronics

Latvia . 5,917 parts In-Stock

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Kulean Microsystems

USA . 3,396 parts In-Stock

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SupplyDigital Components

Austria . 3,150 parts In-Stock

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Continental Prestige Electronics

USA . 2,883 parts In-Stock

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$0.215

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2,883

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$0.215

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Problanco Electronics

Mexico . 1,013 parts In-Stock

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Northwest PG Solutions

USA . 595 parts In-Stock

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595

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UHIMA Technologies

Türkiye . 433 parts In-Stock

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Metaverse IC Inc.

Canada . 200 parts In-Stock

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Kepictronics

USA . 100 parts In-Stock

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100

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Native Components

USA . 29 parts In-Stock

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29

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Overview

Unlock the power of innovation with the 2SA2180 by Onsemi, a top-quality Power Bipolar Junction Transistor designed for high-performance switching applications. Manufactured by industry leader Onsemi, this PNP transistor offers unparalleled reliability and efficiency. With a maximum collector-emitter voltage of 50V and a maximum collector current of 5A, this transistor is a game-changer in the world of electronics. Whether you're working on automotive, industrial, or consumer electronics projects, the 2SA2180 delivers exceptional value and performance that will take your designs to the next level. Elevate your creations with Onsemi's cutting-edge technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, making it suitable for a wide range of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power switching applications, making this transistor ideal for switching purposes.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making it easier to integrate this transistor into various electronic systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle high currents and voltages efficiently, ensuring reliable performance in circuit switching operations.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and soldering onto circuit boards, simplifying the assembly process.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection to the circuit board, ensuring stable electrical connections in various operating conditions.

No. of Terminals: 3

The 3-terminal design offers simplified connectivity options, making it easier to interface this transistor with external components in a circuit.

Minimum DC Current Gain (hFE): 50

With a minimum DC current gain of 50, this transistor can amplify input signals efficiently, ensuring optimal performance in various electronic applications.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating enables this transistor to handle higher voltages, making it suitable for applications with varying voltage requirements.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability, making this transistor a dependable choice for demanding applications.

Maximum Collector Current (IC): 5 A

With a maximum collector current rating of 5 A, this transistor can handle high current loads, making it suitable for power switching applications.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

The terminal finish with a combination of tin, copper, silver, and nickel ensures reliable electrical contacts and prevents corrosion, enhancing the overall durability of the transistor.

Terminal Position: SINGLE

The single terminal position simplifies the wiring and soldering process, making it easy to integrate this transistor into electronic circuits.

Nominal Transition Frequency (fT): 130 MHz

The high nominal transition frequency of 130 MHz indicates the speed at which this transistor can switch on and off, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA2180 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA2180 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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