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MJW21196

Onsemi

MJW21196 by Onsemi

MJW21196 by Onsemi is a NPN Power BJT with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and silicon transistor element material. The package style is flange mount with through-hole terminals.

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Lifecycle Status

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1k+

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Vyrian

USA . 3,880 parts In-Stock

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Digiode

USA . 1,330 parts In-Stock

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Huijzer Components

Netherlands . 2 parts In-Stock

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AZTECH Wire

Italy . 1,199 parts In-Stock

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Problanco Electronics

Mexico . 7,849 parts In-Stock

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SupplyDigital Components

Austria . 3,548 parts In-Stock

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TANS Electronics

Latvia . 1,314 parts In-Stock

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Corphita

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 721 parts In-Stock

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Overview

Unleash the power of innovation with the MJW21196 by Onsemi, a top-quality Power Bipolar Junction Transistor designed for high-performance amplifier applications. Crafted with precision and expertise by Onsemi, this NPN transistor offers unparalleled reliability and efficiency. With a maximum power dissipation of 200 W and a maximum collector-emitter voltage of 250 V, the MJW21196 is a game-changer in the world of electronic components. Invest in the future of technology and experience the unmatched benefits and advantages that this product brings to your projects. Choose Onsemi for excellence in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplified design with single configuration for ease of use.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance.

Package Shape: RECTANGULAR

Rectangular shape allows for easier integration into circuit boards or systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections to the circuit.

Maximum Power Dissipation (Abs): 200 W

High power dissipation capability allows for handling of large amounts of power without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style for secure mounting and installation.

Minimum DC Current Gain (hFE): 8

Minimum DC current gain ensures stable and predictable performance.

Maximum Operating Temperature: 150 °C

High operating temperature range for reliable performance in various environments.

Maximum Collector-Emitter Voltage: 250 V

High collector-emitter voltage capability for handling higher voltage circuits.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability for the transistor.

Maximum Collector Current (IC): 16 A

High maximum collector current allows for handling of large current loads.

Terminal Finish: TIN LEAD

Tin lead finish for reliable and durable terminal connections.

Terminal Position: SINGLE

Single terminal position for simplified connections and integration.

Case Connection: COLLECTOR

Case connection at collector for convenient circuit design and layout.

Peak Reflow Temperature °C: 235

High peak reflow temperature for reliable soldering and assembly.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency for fast and efficient switching operations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJW21196 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJW21196 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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