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MJW21191G

Onsemi

MJW21191G by Onsemi

The Onsemi MJW21191G is a PNP BJT transistor with 150V VCE, 8A IC, and 125W power dissipation. Ideal for amplifier applications, it has a min hFE of 5 and operates up to 150 °C. The package style is flange mount with a rectangular shape and through-hole terminals.

Median Price

$1.110

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$2.348

100+ parts

$2.137

1k+ parts

$1.925

10k+ parts

-

500

$2.348

$2.137

$1.925

-

Rochester

USA . 3,962 parts In-Stock

1+ parts

-

100+ parts

$1.070

1k+ parts

$0.888

10k+ parts

$0.792

3,962

-

$1.070

$0.888

$0.792

Verical

USA . 3,920 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.110

10k+ parts

$0.990

3,920

-

-

$1.110

$0.990

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,050 parts In-Stock

1+ parts

$0.834

100+ parts

-

1k+ parts

-

10k+ parts

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1,050

$0.834

-

-

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DigiKey Marketplace

USA . 3,962 parts In-Stock

1+ parts

-

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3,962

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Vyrian

USA . 3,031 parts In-Stock

1+ parts

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3,031

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Zilex Electronics Inc.

Canada . 60 parts In-Stock

1+ parts

-

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60

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,412 parts In-Stock

1+ parts

$0.790

100+ parts

-

1k+ parts

-

10k+ parts

-

2,412

$0.790

-

-

-

Corohmni

South Africa . 300 parts In-Stock

1+ parts

$0.878

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$0.878

-

-

-

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$2.348

100+ parts

$2.137

1k+ parts

$1.925

10k+ parts

-

500

$2.348

$2.137

$1.925

-

Microchip USA

USA . 437 parts In-Stock

1+ parts

$5.460

100+ parts

-

1k+ parts

-

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437

$5.460

-

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AZTECH Wire

Italy . 992 parts In-Stock

1+ parts

$13.200

100+ parts

-

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992

$13.200

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

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100+ parts

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10,000

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Problanco Electronics

Mexico . 4,264 parts In-Stock

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4,264

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Continental Prestige Electronics

USA . 3,962 parts In-Stock

1+ parts

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100+ parts

$0.793

1k+ parts

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3,962

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$0.793

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QUARKTWIN TECHNOLOGY LTD

USA . 3,446 parts In-Stock

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3,446

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SupplyDigital Components

Austria . 2,642 parts In-Stock

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2,642

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TANS Electronics

Latvia . 2,114 parts In-Stock

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2,114

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Kulean Microsystems

USA . 1,114 parts In-Stock

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1,114

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Assy Fe

Spain . 1,000 parts In-Stock

1+ parts

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1,000

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UHIMA Technologies

Türkiye . 135 parts In-Stock

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135

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Overview

Upgrade your amplifier with the MJW21191G Power Bipolar Junction Transistor by Onsemi. Manufactured with top-quality materials, this PNP transistor offers a maximum power dissipation of 125W and a maximum collector-emitter voltage of 150V. Ideal for amplifier applications, this transistor provides reliable performance and durability. Trust Onsemi's expertise in producing high-quality electronic components to enhance your projects. Experience superior quality and unmatched value with the MJW21191G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuit designs and can be used in complementary pairs for more complex circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and can be easily controlled, making it ideal for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and installation in various electronic devices and circuit boards.

Maximum Power Dissipation (Abs): 125 W

With a high maximum power dissipation, this transistor can handle larger power loads, making it suitable for high-power amplifier applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure mounting and heat dissipation, ensuring the transistor operates efficiently and reliably.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 ensures that the transistor can provide the necessary amplification for various applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for applications that generate heat.

Maximum Collector-Emitter Voltage: 150 V

The high maximum collector-emitter voltage allows the transistor to handle higher voltage levels, increasing its versatility in different circuit designs.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency, ensuring the transistor performs consistently and accurately.

Maximum Collector Current (IC): 8 A

With a maximum collector current of 8 A, this transistor can handle larger current loads, making it suitable for high-power applications.

Terminal Finish: TIN

The terminal finish of TIN provides good conductivity and corrosion resistance, ensuring reliable connections in various electronic circuits.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, making it easy to integrate the transistor into different circuit layouts.

Case Connection: COLLECTOR

The case connection at the collector terminal simplifies circuit design and improves overall efficiency in amplifier applications.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand the soldering process without compromising its performance or reliability.

Nominal Transition Frequency (fT): 4 MHz

A high nominal transition frequency of 4 MHz indicates fast switching speeds, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJW21191G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-247AE

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJW21191G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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