Loading...

MJW21196G

Onsemi

MJW21196G by Onsemi

MJW21196G by Onsemi is a NPN BJT with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and 4MHz transition frequency. The transistor's plastic/epoxy package with flange mount style makes it suitable for through-hole mounting in various electronic designs.

Median Price

$5.460

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 316 parts In-Stock

1+ parts

$3.150

100+ parts

$3.090

1k+ parts

$3.020

10k+ parts

-

316

$3.150

$3.090

$3.020

-

Farnell

UK . 120 parts In-Stock

1+ parts

$4.510

100+ parts

$2.300

1k+ parts

$2.000

10k+ parts

-

120

$4.510

$2.300

$2.000

-

Mouser Electronics

USA . 305 parts In-Stock

1+ parts

$5.460

100+ parts

-

1k+ parts

-

10k+ parts

-

305

$5.460

-

-

-

DigiKey

USA . 21 parts In-Stock

1+ parts

$5.460

100+ parts

$3.077

1k+ parts

$2.165

10k+ parts

$2.063

21

$5.460

$3.077

$2.165

$2.063

Newark

USA . 250 parts In-Stock

1+ parts

$6.320

100+ parts

$3.540

1k+ parts

$3.220

10k+ parts

-

250

$6.320

$3.540

$3.220

-

Element14

Singapore . 120 parts In-Stock

1+ parts

$7.900

100+ parts

$3.580

1k+ parts

$3.430

10k+ parts

-

120

$7.900

$3.580

$3.430

-

RS (Exports)

UK . 116 parts In-Stock

1+ parts

-

100+ parts

$3.109

1k+ parts

$2.709

10k+ parts

-

116

-

$3.109

$2.709

-

EBV Elektronik

Germany . 90 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

90

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$2.644

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$2.644

-

-

-

Digiode

USA . 108 parts In-Stock

1+ parts

$3.496

100+ parts

-

1k+ parts

-

10k+ parts

-

108

$3.496

-

-

-

TME

Poland . 60 parts In-Stock

1+ parts

$5.240

100+ parts

-

1k+ parts

-

10k+ parts

-

60

$5.240

-

-

-

Sensible Micro Corp

USA . 4,505 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,505

-

-

-

-

Flip Electronics

USA . 870 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

870

-

-

-

-

Vyrian

USA . 373 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

373

-

-

-

-

NAC Semi

USA . 60 parts In-Stock

1+ parts

-

100+ parts

$10.580

1k+ parts

-

10k+ parts

-

60

-

$10.580

-

-

IBS Electronics

USA . 30 parts In-Stock

1+ parts

-

100+ parts

$2.986

1k+ parts

$2.685

10k+ parts

-

30

-

$2.986

$2.685

-

Zilex Electronics Inc.

Canada . 24 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

24

-

-

-

-

ComSIT Distribution GmbH

Germany . 23 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Holdelec - ElecDif-Pro

France . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 480 parts In-Stock

1+ parts

$2.592

100+ parts

-

1k+ parts

-

10k+ parts

-

480

$2.592

-

-

-

Ampacity Inc.

Singapore . 151 parts In-Stock

1+ parts

$2.640

100+ parts

-

1k+ parts

-

10k+ parts

-

151

$2.640

-

-

-

Netroflash

USA . 50 parts In-Stock

1+ parts

$2.644

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$2.644

-

-

-

Continental Prestige Electronics

USA . 211 parts In-Stock

1+ parts

$3.100

100+ parts

$2.280

1k+ parts

-

10k+ parts

-

211

$3.100

$2.280

-

-

Corphita

USA . 799 parts In-Stock

1+ parts

$3.312

100+ parts

-

1k+ parts

-

10k+ parts

-

799

$3.312

-

-

-

Component Stockers USA

USA . 334 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

334

$99.990

-

-

-

Perfect Parts

USA . 63,248 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

63,248

-

-

-

-

Lixinc

USA . 15,591 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,591

-

-

-

-

Microchip USA

USA . 10,474 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,474

-

-

-

-

TANS Electronics

Latvia . 5,780 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,780

-

-

-

-

Kulean Microsystems

USA . 5,615 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,615

-

-

-

-

iodParts Technologies Inc.

India . 5,425 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,425

-

-

-

-

Problanco Electronics

Mexico . 4,682 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,682

-

-

-

-

SupplyDigital Components

Austria . 3,878 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,878

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

UHIMA Technologies

Türkiye . 226 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

226

-

-

-

-

Kepictronics

USA . 82 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

82

-

-

-

-

Overview

Elevate your electronic projects with the MJW21196G Power Bipolar Junction Transistor from Onsemi. With a maximum power dissipation of 200W, this NPN transistor is perfect for amplifier applications. Its durable plastic/epoxy package body material ensures reliability and longevity. Whether you're a hobbyist or a professional, this transistor offers unmatched value and performance. Trust Onsemi's reputation for quality and innovation, and experience the benefits of using the MJW21196G in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into most circuit designs, making this transistor versatile and widely compatible.

Configuration: SINGLE

The single configuration simplifies circuit design and makes installation straightforward, making it ideal for DIY projects or prototyping.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor delivers high performance and efficiency in audio amplification projects.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and placement on PCBs, improving overall space utilization in the design.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides strong connections and easy soldering, making installation and assembly hassle-free.

No. of Terminals: 3

With three terminals, this transistor offers essential connections for effective circuit operation and functionality.

Maximum Power Dissipation (Abs): 200 W

The high power dissipation rating of 200W ensures that the transistor can handle heavy loads and operate efficiently under demanding conditions.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure mounting and heat dissipation, making it suitable for high-power applications.

Minimum DC Current Gain (hFE): 8

With a minimum DC current gain of 8, this transistor provides consistent amplification and signal strength in various circuit designs.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures reliability and stability in extreme temperature conditions.

Maximum Collector-Emitter Voltage: 250 V

The high collector-emitter voltage rating of 250V allows this transistor to be used in a wide range of voltage applications securely.

Transistor Element Material: SILICON

Made of silicon, this transistor offers excellent performance, reliability, and efficiency, making it a popular choice for many electronic applications.

Maximum Collector Current (IC): 16 A

With a maximum collector current of 16A, this transistor can handle high current loads, making it suitable for power-hungry circuits.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and ensures a reliable electrical connection, extending the lifespan of the transistor.

Terminal Position: SINGLE

The single terminal position simplifies installation and wiring, making it easy to integrate this transistor into various circuit designs.

Case Connection: COLLECTOR

The case connection at the collector terminal ensures a secure and stable connection, improving the overall performance and reliability of the transistor.

Nominal Transition Frequency (fT): 4 MHz

With a nominal transition frequency of 4MHz, this transistor offers high-speed performance and is ideal for fast-switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJW21196G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJW21196G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 13