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MJW21191

Onsemi

MJW21191 by Onsemi

MJW21191 by Onsemi is a PNP BJT transistor with 100W power dissipation, 150V max collector-emitter voltage, and 8A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Package style is flange mount with through-hole terminals.

Median Price

$1.090

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 2,000 parts In-Stock

1+ parts

$1.163

100+ parts

$1.058

1k+ parts

$0.954

10k+ parts

-

2,000

$1.163

$1.058

$0.954

-

DigiKey

USA . 3,090 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.910

10k+ parts

$0.910

3,090

-

-

$0.910

$0.910

Rochester

USA . 2,931 parts In-Stock

1+ parts

-

100+ parts

$1.070

1k+ parts

$0.888

10k+ parts

$0.792

2,931

-

$1.070

$0.888

$0.792

Verical

USA . 1,851 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.110

10k+ parts

$0.990

1,851

-

-

$1.110

$0.990

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,004 parts In-Stock

1+ parts

$0.834

100+ parts

-

1k+ parts

-

10k+ parts

-

2,004

$0.834

-

-

-

Vyrian

USA . 2,467 parts In-Stock

1+ parts

$0.878

100+ parts

-

1k+ parts

-

10k+ parts

-

2,467

$0.878

-

-

-

Zilex Electronics Inc.

Canada . 30 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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30

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,224 parts In-Stock

1+ parts

$0.790

100+ parts

-

1k+ parts

-

10k+ parts

-

2,224

$0.790

-

-

-

Corohmni

South Africa . 93 parts In-Stock

1+ parts

$0.878

100+ parts

-

1k+ parts

-

10k+ parts

-

93

$0.878

-

-

-

Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$1.163

100+ parts

$1.058

1k+ parts

$0.954

10k+ parts

-

2,000

$1.163

$1.058

$0.954

-

Microchip USA

USA . 116 parts In-Stock

1+ parts

$5.460

100+ parts

-

1k+ parts

-

10k+ parts

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116

$5.460

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 17,893 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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17,893

-

-

-

-

Kulean Microsystems

USA . 8,221 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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8,221

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-

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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8,000

-

-

-

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Problanco Electronics

Mexico . 6,760 parts In-Stock

1+ parts

-

100+ parts

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6,760

-

-

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SupplyDigital Components

Austria . 4,654 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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4,654

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-

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Continental Prestige Electronics

USA . 3,090 parts In-Stock

1+ parts

-

100+ parts

$0.793

1k+ parts

-

10k+ parts

-

3,090

-

$0.793

-

-

UHIMA Technologies

Türkiye . 920 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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920

-

-

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TANS Electronics

Latvia . 533 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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533

-

-

-

-

Overview

Upgrade your electronic projects with the MJW21191 Power Bipolar Junction Transistor by Onsemi. Known for their top-notch quality and reliability, Onsemi delivers high-performance components that are trusted by professionals worldwide. The PNP configuration and 100W power dissipation make this transistor ideal for amplifier applications, providing seamless operation and efficient power management. With a maximum collector-emitter voltage of 150V and a peak reflow temperature of 235 °C, the MJW21191 offers superior performance and durability. Trust Onsemi to take your projects to the next level with the MJW21191 transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in various projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier circuits, ensuring optimal performance in amplification tasks.

Maximum Power Dissipation (Abs): 100 W

With a high power dissipation capacity, this transistor can handle significant power loads without overheating.

Maximum Collector-Emitter Voltage: 150 V

The high voltage rating allows the transistor to be used in applications requiring higher voltage handling capabilities.

Maximum Collector Current (IC): 8 A

The high collector current rating makes this transistor suitable for applications requiring high current handling capacity.

Nominal Transition Frequency (fT): 4 MHz

The high transition frequency allows for fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJW21191 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-247AE

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJW21191 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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