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MJW21192G

Onsemi

MJW21192G by Onsemi

MJW21192G by Onsemi is a NPN Power BJT with 125W power dissipation, 150V max collector-emitter voltage, and 8A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,320 parts In-Stock

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Digiode

USA . 544 parts In-Stock

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Zilex Electronics Inc.

Canada . 270 parts In-Stock

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270

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Distributors (Availability)

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AZTECH Wire

Italy . 780 parts In-Stock

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$21.230

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780

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QUARKTWIN TECHNOLOGY LTD

USA . 18,780 parts In-Stock

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TANS Electronics

Latvia . 7,770 parts In-Stock

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Kulean Microsystems

USA . 5,854 parts In-Stock

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Problanco Electronics

Mexico . 5,696 parts In-Stock

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5,696

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SupplyDigital Components

Austria . 702 parts In-Stock

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UHIMA Technologies

Türkiye . 671 parts In-Stock

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Corphita

USA . 456 parts In-Stock

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Corohmni

South Africa . 347 parts In-Stock

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Perfect Parts

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Overview

Elevate your amplifier designs with the MJW21192G by Onsemi, a top-tier Power Bipolar Junction Transistor (BJT) that guarantees superior performance and reliability. Manufactured by the trusted brand Onsemi, this NPN transistor offers a maximum power dissipation of 125W and a maximum collector-emitter voltage of 150V, making it ideal for a wide range of applications. With a minimum DC current gain of 5 and a nominal transition frequency of 4MHz, this transistor delivers unmatched value and efficiency to customers looking to enhance their amplifier projects. Choose the MJW21192G for quality you can trust and results you can depend on.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY material makes the package durable and cost-effective.

Polarity or Channel Type

NPN type is commonly used in amplifiers and provides good performance.

Configuration

SINGLE configuration simplifies the design and integration process.

Transistor Application

AMPLIFIER application ensures optimal performance in signal boosting.

Package Shape

RECTANGULAR shape allows for easy mounting and space-saving design.

No. of Terminals

3 terminals provide necessary connections for proper functioning.

Maximum Power Dissipation (Abs)

125 W power dissipation capability ensures reliability under high loads.

Package Style (Meter)

FLANGE MOUNT style offers secure installation and heat dissipation.

Minimum DC Current Gain (hFE)

Minimum hFE of 5 provides stable amplification performance.

Maximum Operating Temperature

Operating up to 150 °C ensures stability in various environments.

Maximum Collector-Emitter Voltage

150 V rating allows for high voltage applications.

Transistor Element Material

SILICON material ensures reliable performance and longevity.

Maximum Collector Current (IC)

8 A current handling capacity supports high-power applications.

Terminal Finish

TIN finish offers good conductivity and corrosion resistance.

Terminal Position

SINGLE position simplifies installation and circuit design.

Case Connection

COLLECTOR connection type for efficient signal transmission.

Peak Reflow Temperature °C

260 C peak reflow temperature for reliable soldering.

Nominal Transition Frequency (fT)

4 MHz frequency capability for fast signal switching.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJW21192G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-247AE

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJW21192G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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