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MJW21195G

Onsemi

MJW21195G by Onsemi

The Onsemi MJW21195G is a PNP power BJT with 250V VCEO, 16A IC, and 200W Ptot. Ideal for amplifier applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers an hFE of min 8 and fT of 4MHz.

Median Price

$5.340

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

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Farnell

UK . 55 parts In-Stock

1+ parts

$4.450

100+ parts

$2.390

1k+ parts

$2.120

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-

55

$4.450

$2.390

$2.120

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Mouser Electronics

USA . 348 parts In-Stock

1+ parts

$5.340

100+ parts

-

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$2.470

10k+ parts

$2.360

348

$5.340

-

$2.470

$2.360

DigiKey

USA . 284 parts In-Stock

1+ parts

$5.460

100+ parts

$3.077

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$2.165

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$2.063

284

$5.460

$3.077

$2.165

$2.063

Newark

USA . 265 parts In-Stock

1+ parts

$6.200

100+ parts

$3.680

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$3.330

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265

$6.200

$3.680

$3.330

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Element14

Singapore . 55 parts In-Stock

1+ parts

$7.590

100+ parts

$3.700

1k+ parts

$3.430

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55

$7.590

$3.700

$3.430

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Verical

USA . 5,100 parts In-Stock

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$2.075

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5,100

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$2.075

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RS (Exports)

UK . 46 parts In-Stock

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-

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$3.200

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$2.704

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46

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$3.200

$2.704

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Distributors (In-Stock)

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Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$2.674

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-

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15

$2.674

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Digiode

USA . 1,358 parts In-Stock

1+ parts

$3.486

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1,358

$3.486

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TME

Poland . 94 parts In-Stock

1+ parts

$5.090

100+ parts

$2.920

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94

$5.090

$2.920

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Flip Electronics

USA . 4,710 parts In-Stock

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4,710

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Chip Stock

USA . 2,788 parts In-Stock

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Sensible Micro Corp

USA . 316 parts In-Stock

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316

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ComSIT Distribution GmbH

Germany . 119 parts In-Stock

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Vyrian

USA . 89 parts In-Stock

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Zilex Electronics Inc.

Canada . 55 parts In-Stock

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55

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ECAB

Sweden . 30 parts In-Stock

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30

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Distributors (Availability)

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Corohmni

South Africa . 82 parts In-Stock

1+ parts

$2.621

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82

$2.621

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Netroflash

USA . 100 parts In-Stock

1+ parts

$2.674

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100

$2.674

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Ampacity Inc.

Singapore . 208 parts In-Stock

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$2.720

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208

$2.720

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Corphita

USA . 1,414 parts In-Stock

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$3.303

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$3.303

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Microchip USA

USA . 8,972 parts In-Stock

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$30.095

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8,972

$30.095

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Perfect Parts

USA . 53,959 parts In-Stock

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iodParts Technologies Inc.

India . 8,019 parts In-Stock

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TANS Electronics

Latvia . 6,769 parts In-Stock

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SupplyDigital Components

Austria . 4,502 parts In-Stock

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Problanco Electronics

Mexico . 4,055 parts In-Stock

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Kulean Microsystems

USA . 1,528 parts In-Stock

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UHIMA Technologies

Türkiye . 657 parts In-Stock

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Kepictronics

USA . 94 parts In-Stock

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GreenTree Electronics

Israel . 20 parts In-Stock

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Overview

Looking to amplify your power management needs? Look no further than the MJW21195G by Onsemi. As a leading manufacturer in power bipolar junction transistors, Onsemi ensures top-notch quality and reliability. Perfect for amplifier applications, this PNP transistor offers a maximum power dissipation of 200 W and a maximum collector-emitter voltage of 250 V. With a minimum DC current gain of 8, this transistor provides exceptional performance and efficiency. Upgrade your power systems with the MJW21195G and experience unparalleled value and benefits that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in various projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor ensures optimal performance in such circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and installation in different electronic devices and systems.

Maximum Power Dissipation (Abs): 200 W

With a high power dissipation capacity, this transistor can handle large amounts of power without overheating.

Maximum Collector-Emitter Voltage: 250 V

The high maximum voltage rating makes this transistor suitable for applications where higher voltages are involved.

Maximum Collector Current (IC): 16 A

Capable of handling high collector currents, this transistor is suitable for applications with high current requirements.

Nominal Transition Frequency (fT): 4 MHz

The high transition frequency allows for faster switching speeds and better performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJW21195G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJW21195G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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