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MJW21194G

Onsemi

MJW21194G by Onsemi

MJW21194G by Onsemi is a NPN Power BJT with 250V VCEO, 16A IC, and 200W Ptot. Ideal for amplifier applications due to its high power dissipation capability and low hFE of 8. The transistor's silicon element and flange mount package make it suitable for high-temperature environments up to 150°C.

Median Price

$6.250

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 223 parts In-Stock

1+ parts

$5.290

100+ parts

$2.690

1k+ parts

$2.330

10k+ parts

-

223

$5.290

$2.690

$2.330

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Newark

USA . 17 parts In-Stock

1+ parts

$7.210

100+ parts

$4.080

1k+ parts

$3.830

10k+ parts

-

17

$7.210

$4.080

$3.830

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Mouser Electronics

USA . 1,546 parts In-Stock

1+ parts

$7.290

100+ parts

-

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$2.970

10k+ parts

$2.770

1,546

$7.290

-

$2.970

$2.770

Element14

Singapore . 223 parts In-Stock

1+ parts

$8.900

100+ parts

$4.020

1k+ parts

$3.860

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223

$8.900

$4.020

$3.860

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Master Electronics

USA . 480 parts In-Stock

1+ parts

-

100+ parts

$2.720

1k+ parts

$2.470

10k+ parts

$2.280

480

-

$2.720

$2.470

$2.280

Verical

USA . 480 parts In-Stock

1+ parts

-

100+ parts

$3.426

1k+ parts

$3.086

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480

-

$3.426

$3.086

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Avnet

USA . 120 parts In-Stock

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120

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Distributors (In-Stock)

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Digiode

USA . 1,123 parts In-Stock

1+ parts

$3.658

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-

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1,123

$3.658

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TME

Poland . 111 parts In-Stock

1+ parts

$5.750

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111

$5.750

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Vyrian

USA . 6,453 parts In-Stock

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6,453

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IBS Electronics

USA . 480 parts In-Stock

1+ parts

-

100+ parts

$3.408

1k+ parts

$3.352

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480

-

$3.408

$3.352

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NAC Semi

USA . 360 parts In-Stock

1+ parts

-

100+ parts

$6.330

1k+ parts

$5.700

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360

-

$6.330

$5.700

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Nova Conductors

Japan . 83 parts In-Stock

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83

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Elcom Components

USA . 18 parts In-Stock

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18

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Flip Electronics

USA . 8 parts In-Stock

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8

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Sunrise Surplus Inc.

USA . 5 parts In-Stock

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5

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,338 parts In-Stock

1+ parts

$3.270

100+ parts

-

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1,338

$3.270

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Corphita

USA . 392 parts In-Stock

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$3.465

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392

$3.465

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Corohmni

South Africa . 258 parts In-Stock

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$3.850

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258

$3.850

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Continental Prestige Electronics

USA . 18 parts In-Stock

1+ parts

$4.920

100+ parts

$2.760

1k+ parts

$2.310

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18

$4.920

$2.760

$2.310

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Microchip USA

USA . 2,363 parts In-Stock

1+ parts

$15.204

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2,363

$15.204

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Perfect Parts

USA . 38,665 parts In-Stock

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38,665

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Kulean Microsystems

USA . 8,242 parts In-Stock

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SupplyDigital Components

Austria . 7,541 parts In-Stock

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iodParts Technologies Inc.

India . 5,415 parts In-Stock

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Problanco Electronics

Mexico . 5,210 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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GreenTree Electronics

Israel . 1,026 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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1,000

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TANS Electronics

Latvia . 503 parts In-Stock

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503

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Kepictronics

USA . 95 parts In-Stock

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95

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UHIMA Technologies

Türkiye . 18 parts In-Stock

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Overview

Unlock the power of innovation with the MJW21194G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that are versatile and reliable. Whether you're looking to amplify signals or enhance your electronic projects, this NPN transistor offers a streamlined design with a maximum power dissipation of 200W. With a focus on performance and efficiency, the MJW21194G is the perfect choice for engineers and hobbyists seeking a high-quality component that delivers exceptional value and performance. Elevate your projects with the MJW21194G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

Offers versatility in circuit design and compatibility with various electronic devices.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in a variety of applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring high performance and reliability in signal processing.

Maximum Power Dissipation (Abs): 200 W

Can handle high power levels without overheating, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 250 V

Allows for compatibility with high voltage circuits, expanding the range of possible applications.

Maximum Collector Current (IC): 16 A

Capability to handle high current levels, making it suitable for power amplification tasks.

Nominal Transition Frequency (fT): 4 MHz

Enables high-speed switching and signal amplification, making it ideal for applications requiring fast response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJW21194G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJW21194G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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