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MJW21193G

Onsemi

MJW21193G by Onsemi

MJW21193G by Onsemi is a PNP BJT transistor with 200 W power dissipation, 250 V max collector-emitter voltage, and 16 A max collector current. Ideal for amplifier applications due to its single configuration and 4 MHz transition frequency. Package style is flange mount with matte tin terminal finish.

Median Price

$6.150

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 229 parts In-Stock

1+ parts

$5.120

100+ parts

$2.720

1k+ parts

$2.410

10k+ parts

-

229

$5.120

$2.720

$2.410

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Mouser Electronics

USA . 577 parts In-Stock

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$6.150

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577

$6.150

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DigiKey

USA . 64 parts In-Stock

1+ parts

$6.150

100+ parts

$3.496

1k+ parts

$2.483

10k+ parts

$2.417

64

$6.150

$3.496

$2.483

$2.417

Newark

USA . 238 parts In-Stock

1+ parts

$7.110

100+ parts

$4.260

1k+ parts

$3.920

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238

$7.110

$4.260

$3.920

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Element14

Singapore . 229 parts In-Stock

1+ parts

$8.580

100+ parts

$4.210

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$4.020

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229

$8.580

$4.210

$4.020

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Avnet

USA . 690 parts In-Stock

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690

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Verical

USA . 600 parts In-Stock

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$2.432

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600

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$2.432

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Flip Electronics (Authorized)

USA . 137 parts In-Stock

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Rochester

USA . 5 parts In-Stock

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$2.410

1k+ parts

$2.160

10k+ parts

$2.030

5

-

$2.410

$2.160

$2.030

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,050 parts In-Stock

1+ parts

$2.556

100+ parts

-

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2,050

$2.556

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Nova Conductors

Japan . 73 parts In-Stock

1+ parts

$2.869

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73

$2.869

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Chip Stock

USA . 2,521 parts In-Stock

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2,521

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Flip Electronics

USA . 737 parts In-Stock

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737

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NAC Semi

USA . 600 parts In-Stock

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100+ parts

$6.330

1k+ parts

$5.700

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600

-

$6.330

$5.700

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Vyrian

USA . 455 parts In-Stock

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455

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Distributors (Availability)

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$0.865

100+ parts

$0.787

1k+ parts

$0.709

10k+ parts

-

2,500

$0.865

$0.787

$0.709

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Ampacity Inc.

Singapore . 170 parts In-Stock

1+ parts

$2.290

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170

$2.290

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Corphita

USA . 964 parts In-Stock

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$2.421

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964

$2.421

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Corohmni

South Africa . 328 parts In-Stock

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$2.690

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328

$2.690

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Component Stockers USA

USA . 2,178 parts In-Stock

1+ parts

$5.110

100+ parts

$3.470

1k+ parts

$3.740

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2,178

$5.110

$3.470

$3.740

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Perfect Parts

USA . 77,143 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 17,120 parts In-Stock

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Problanco Electronics

Mexico . 5,821 parts In-Stock

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5,821

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TANS Electronics

Latvia . 3,712 parts In-Stock

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Lixinc

USA . 3,480 parts In-Stock

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3,480

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Kulean Microsystems

USA . 3,285 parts In-Stock

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3,285

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Eastek

USA . 2,730 parts In-Stock

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2,730

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

$2.811

1k+ parts

$2.725

10k+ parts

$2.668

1,000

-

$2.811

$2.725

$2.668

SupplyDigital Components

Austria . 860 parts In-Stock

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860

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UHIMA Technologies

Türkiye . 563 parts In-Stock

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563

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GreenTree Electronics

Israel . 30 parts In-Stock

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30

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Overview

Unleash the power of innovation with the MJW21193G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors designed for high-performance applications like amplifiers. With a maximum power dissipation of 200W and a maximum collector-emitter voltage of 250V, this PNP transistor offers unparalleled reliability and efficiency. Say goodbye to compromises and hello to seamless functionality with the MJW21193G - the ultimate choice for your amplification needs. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuit designs, making it a versatile option for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making it user-friendly for engineers and hobbyists alike.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides optimal performance and efficiency in amplifying signals.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement within electronic devices, optimizing space and layout.

Terminal Form: THROUGH-HOLE

The through-hole terminals make soldering and connecting the transistor hassle-free, ensuring a secure and reliable connection.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit configurations and connections, enhancing versatility in usage.

Maximum Power Dissipation (Abs): 200 W

The high power dissipation capability of 200 W allows for efficient heat management and reliable performance in demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount design enables easy installation and secure mounting, ensuring stability and durability in various environments.

Minimum DC Current Gain (hFE): 8

With a minimum DC current gain of 8, this transistor provides consistent and reliable amplification of signals in circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures reliable performance in extreme temperature conditions, making it suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 250 V

The high collector-emitter voltage of 250 V allows for handling of high voltages, making this transistor suitable for power applications.

Transistor Element Material: SILICON

The silicon material of the transistor element ensures high performance, low noise, and reliable operation, making it a top choice for amplifier circuits.

Maximum Collector Current (IC): 16 A

With a maximum collector current of 16 A, this transistor can handle high levels of current, making it ideal for power applications.

Terminal Finish: MATTE TIN

The matte tin finish provides corrosion resistance and ensures a reliable electrical connection, enhancing the durability and longevity of the transistor.

Terminal Position: SINGLE

The single terminal position simplifies wiring and connections, making installation and maintenance hassle-free.

Case Connection: ISOLATED

The isolated case connection provides protection against electrical interference, ensuring stable and reliable performance in various circuit configurations.

Nominal Transition Frequency (fT): 4 MHz

The high nominal transition frequency of 4 MHz ensures fast switching speeds and high-frequency performance, making this transistor ideal for RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJW21193G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJW21193G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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