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MJW21194

Onsemi

MJW21194 by Onsemi

MJW21194 by Onsemi is a NPN Power BJT with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and 4MHz transition frequency. The transistor's plastic/epoxy package body and flange mount style make it suitable for through-hole mounting in various electronic devices.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 21,000 parts In-Stock

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Vyrian

USA . 12,098 parts In-Stock

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Digiode

USA . 210 parts In-Stock

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LittleDiode

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AZTECH Wire

Italy . 297 parts In-Stock

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SupplyDigital Components

Austria . 8,145 parts In-Stock

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TANS Electronics

Latvia . 7,508 parts In-Stock

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Problanco Electronics

Mexico . 7,267 parts In-Stock

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Kulean Microsystems

USA . 4,060 parts In-Stock

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Corphita

USA . 2,022 parts In-Stock

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Corohmni

South Africa . 473 parts In-Stock

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UHIMA Technologies

Türkiye . 333 parts In-Stock

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Overview

Upgrade your amplifier with the MJW21194 from Onsemi! This high-quality Power Bipolar Junction Transistor (BJT) offers a maximum power dissipation of 200W and a maximum collector-emitter voltage of 250V, providing exceptional performance for your audio systems. With a minimum DC current gain of 8 and a peak reflow temperature of 235 °C, this NPN transistor is perfect for applications requiring reliable amplification. Trust in Onsemi's expertise in semiconductor manufacturing to deliver superior products that bring value and benefits to your projects. Elevate your sound quality with the MJW21194 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection to the transistor, ensuring its longevity and reliability in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for use in amplification applications, ensuring optimal performance in amplifier circuits.

Maximum Power Dissipation (Abs): 200 W

The high power dissipation capability allows the transistor to handle high power amplification tasks without overheating or failing.

Minimum DC Current Gain (hFE): 8

The minimum DC current gain ensures consistent and reliable amplification performance in various operating conditions.

Maximum Collector-Emitter Voltage: 250 V

The high collector-emitter voltage rating provides flexibility and resilience in amplifier circuits with varying voltage requirements.

Maximum Collector Current (IC): 16 A

The high collector current rating allows the transistor to handle high current amplification tasks efficiently and effectively.

Nominal Transition Frequency (fT): 4 MHz

The high transition frequency ensures fast and accurate signal amplification, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJW21194 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJW21194 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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