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BUB323ZT4

Onsemi

BUB323ZT4 by Onsemi

BUB323ZT4 by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 350V, collector current of 10A, and power dissipation of 150W. With a transition frequency of 2MHz, it is suitable for high-power electronic circuits in various industries.

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3

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1k+

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Chip Stock

USA . 54,000 parts In-Stock

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Vyrian

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Digiode

USA . 1,995 parts In-Stock

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1,995

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AZTECH Wire

Italy . 1,093 parts In-Stock

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$21.700

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Component Stockers USA

USA . 508 parts In-Stock

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$99.990

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Kepictronics

USA . 27,860 parts In-Stock

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Kulean Microsystems

USA . 7,399 parts In-Stock

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TANS Electronics

Latvia . 2,526 parts In-Stock

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Northwest PG Solutions

USA . 1,285 parts In-Stock

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Problanco Electronics

Mexico . 1,068 parts In-Stock

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Native Components

USA . 684 parts In-Stock

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SupplyDigital Components

Austria . 631 parts In-Stock

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Corphita

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Corohmni

South Africa . 400 parts In-Stock

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Türkiye . 56 parts In-Stock

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Overview

Experience the power of innovation with the Onsemi BUB323ZT4 Power Bipolar Junction Transistor. Designed with precision and expertise, this NPN transistor with Darlington configuration offers exceptional performance in switching applications. Its compact design and high DC current gain ensure efficiency and reliability. Whether you're looking to optimize your electronic circuits or enhance your industrial systems, the BUB323ZT4 delivers unmatched value and versatility. Trust in Onsemi's reputation for quality and let this advanced transistor elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN polarity provides good switching characteristics and allows for easy integration into circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration with built-in diode and resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in controlling current flow.

Surface Mount: YES

Being surface mountable allows for easy automated assembly and saves space on the PCB.

Maximum Power Dissipation (Abs): 150 W

With a high power dissipation rating, this transistor can handle high power applications without overheating.

Minimum DC Current Gain (hFE): 500

High DC current gain ensures amplification and precise control of current flow in the circuit.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows for reliable performance even in harsh environments.

Maximum Collector-Emitter Voltage: 350 V

High collector-emitter voltage rating provides a safe operating margin for various power supply applications.

Transistor Element Material: SILICON

Silicon material offers good thermal conductivity and high reliability in electronic components.

Maximum Collector Current (IC): 10 A

High collector current rating allows for handling high load currents in the circuit.

Peak Reflow Temperature °C: 235

With a high peak reflow temperature, the transistor can withstand reflow soldering processes during PCB assembly.

Nominal Transition Frequency (fT): 2 MHz

High transition frequency enables fast switching speeds and efficient performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUB323ZT4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

500

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUB323ZT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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