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BUB323ZT4G

Onsemi

BUB323ZT4G by Onsemi

BUB323ZT4G by Onsemi is a NPN Power BJT with Darlington configuration, ideal for switching applications. It has a max power dissipation of 150W, hFE of 500, and can handle up to 10A collector current. With a max operating temp of 175°C and VCE of 350V, it's suitable for various high-power electronic designs.

Median Price

$1.464

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 558 parts In-Stock

1+ parts

$1.477

100+ parts

$1.408

1k+ parts

$1.361

10k+ parts

-

558

$1.477

$1.408

$1.361

-

Mouser Electronics

USA . 3,289 parts In-Stock

1+ parts

$3.530

100+ parts

$1.730

1k+ parts

$1.490

10k+ parts

$1.430

3,289

$3.530

$1.730

$1.490

$1.430

Newark

USA . 651 parts In-Stock

1+ parts

$4.300

100+ parts

$2.230

1k+ parts

$2.110

10k+ parts

$1.790

651

$4.300

$2.230

$2.110

$1.790

Element14

Singapore . 651 parts In-Stock

1+ parts

$5.440

100+ parts

$2.450

1k+ parts

$1.790

10k+ parts

-

651

$5.440

$2.450

$1.790

-

Chip1Stop

Japan . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.400

10k+ parts

$1.360

4,000

-

-

$1.400

$1.360

Farnell

UK . 682 parts In-Stock

1+ parts

-

100+ parts

$1.450

1k+ parts

$1.080

10k+ parts

-

682

-

$1.450

$1.080

-

Verical

USA . 558 parts In-Stock

1+ parts

-

100+ parts

$1.408

1k+ parts

$1.361

10k+ parts

-

558

-

$1.408

$1.361

-

Rochester

USA . 518 parts In-Stock

1+ parts

-

100+ parts

$1.240

1k+ parts

$1.110

10k+ parts

$1.050

518

-

$1.240

$1.110

$1.050

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$1.906

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$1.906

-

-

-

Digiode

USA . 864 parts In-Stock

1+ parts

$2.869

100+ parts

-

1k+ parts

-

10k+ parts

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864

$2.869

-

-

-

VNN

France . 6,032 parts In-Stock

1+ parts

-

100+ parts

-

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6,032

-

-

-

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Vyrian

USA . 2,381 parts In-Stock

1+ parts

-

100+ parts

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2,381

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-

-

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LIBRA Elektronik GmbH

Germany . 104 parts In-Stock

1+ parts

-

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104

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-

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,085 parts In-Stock

1+ parts

$1.070

100+ parts

-

1k+ parts

-

10k+ parts

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2,085

$1.070

-

-

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Corohmni

South Africa . 470 parts In-Stock

1+ parts

$1.255

100+ parts

-

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-

10k+ parts

-

470

$1.255

-

-

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Continental Prestige Electronics

USA . 6,898 parts In-Stock

1+ parts

$1.800

100+ parts

-

1k+ parts

-

10k+ parts

$1.764

6,898

$1.800

-

-

$1.764

Argo Parts USA

USA . 7 parts In-Stock

1+ parts

$1.800

100+ parts

-

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-

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7

$1.800

-

-

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Corphita

USA . 1,881 parts In-Stock

1+ parts

$2.718

100+ parts

-

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1,881

$2.718

-

-

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Microchip USA

USA . 6,879 parts In-Stock

1+ parts

$12.327

100+ parts

-

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10k+ parts

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6,879

$12.327

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-

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Kulean Microsystems

USA . 6,204 parts In-Stock

1+ parts

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6,204

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Problanco Electronics

Mexico . 5,933 parts In-Stock

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5,933

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Perfect Parts

USA . 5,142 parts In-Stock

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5,142

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TANS Electronics

Latvia . 1,847 parts In-Stock

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1,847

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SupplyDigital Components

Austria . 1,515 parts In-Stock

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1,515

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$1.868

1k+ parts

$1.811

10k+ parts

$1.773

1,000

-

$1.868

$1.811

$1.773

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1,000

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Kepictronics

USA . 800 parts In-Stock

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800

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UHIMA Technologies

Türkiye . 328 parts In-Stock

1+ parts

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328

-

-

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-

Overview

Experience the superior quality and reliability of the BUB323ZT4G by Onsemi, a leading manufacturer in the industry. This Power Bipolar Junction Transistor (BJT) offers unmatched performance in switching applications with its NPN polarity and Darlington configuration. With a built-in diode and resistor, this transistor provides added convenience and efficiency. Its compact rectangular package with gull wing terminals allows for easy surface mounting, making it ideal for a wide range of electronic devices. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the BUB323ZT4G and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Makes the transistor lightweight, durable, and resistant to external elements, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching circuits and amplifiers, offering high efficiency and reliability.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The darlington configuration provides high current gain and the built-in diode and resistor simplify circuit design and reduce component count.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation.

Maximum Power Dissipation (Abs): 150 W

Allows the transistor to handle high power levels without overheating, making it suitable for demanding applications.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, ensuring reliable performance in harsh environments.

Nominal Transition Frequency (fT): 2 MHz

High transition frequency allows for fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUB323ZT4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

500

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUB323ZT4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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