Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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MPS6717G
Onsemi
MPS6717G by Onsemi is a NPN BJT transistor with max VCEsat of 0.5V, hFE of 50, and IC of 0.5A. Ideal for amplifier applications, it operates b/w -55 to 150 °C with a max VCE of 80V. The package is cylindrical with through-hole terminals and can dissipate up to 2.5W power.
.5 A
30 pF
80 V
SINGLE
50
TO-92
O-PBCY-T3
e1
1
3
150 Cel
-55 Cel
PLASTIC/EPOXY
ROUND
CYLINDRICAL
260
NPN
1 W
2.5 W
Not Qualified
Other Transistors
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
AMPLIFIER
SILICON
.5 V
MPS6717RLRAG
MPS6717RLRAG by Onsemi is a NPN BJT transistor with max VCEsat of 0.5V, hFE of 50, and IC of 0.5A. Ideal for amplifier applications due to its high power dissipation (2.5W) and collector-emitter voltage of 80V. Its package style is cylindrical with through-hole terminals for easy mounting in various electronic circuits.
MPSW42G
MPSW42G by Onsemi is a NPN BJT with 300V VCE, 0.5A IC, and 40 hFE. It is used in power applications due to its 2.5W Pdiss and -55 °C to 150°C operating temp range. The transistor's through-hole package makes it suitable for various cylindrical style designs.
3 pF
300 V
40
50 MHz
MPSW55G
The Onsemi MPSW55G is a PNP BJT transistor with max VCEsat of 0.5V, hFE of 50, and max IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 50MHz and low collector-emitter voltage of 60V. With a package style of cylindrical, it can dissipate up to 2.5W power in ambient temperatures up to 150 °C.
15 pF
60 V
PNP
MPSW55RLRAG
MPSW55RLRAG by Onsemi is a PNP BJT transistor with a max VCEsat of 0.5V, ideal for amplifier applications. It has a min hFE of 50 and can handle a max collector-emitter voltage of 60V. With a package style of cylindrical and terminal finish of Tin Silver Copper, it operates b/w -55 to 150 °C.
TIP101G
TIP101G by Onsemi is a NPN BJT with Darlington configuration, ideal for amplifier applications. It has a max power dissipation of 80W, hFE of 200, and max collector current of 8A. With a max operating temp of 150°C and VCE of 80V, it's suitable for various power control circuits.
COLLECTOR
8 A
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
200
TO-220AB
R-PSFM-T3
e3
RECTANGULAR
FLANGE MOUNT
80 W
TIN
TIP106G
TIP106G by Onsemi is a PNP power BJT with 80V VCEO, 8A IC, and 200 hFE. It features a Darlington configuration with built-in diode and resistor, ideal for amplifier applications. The transistor has a max power dissipation of 80W and operates up to 150 °C temperature in a rectangular package style.
TIP112G
TIP112G by Onsemi is a power BJT transistor with NPN polarity. It has a max power dissipation of 50W and can handle a max collector-emitter voltage of 100V. This transistor is commonly used in amplifier applications due to its high DC current gain (hFE) of 500 and nominal transition frequency (fT) of 25MHz.
LEADFORM OPTIONS ARE AVAILABLE
2 A
100 V
500
50 W
25 MHz
TIP115G
TIP115G by Onsemi is a PNP power BJT with 50W max power dissipation, hFE of 500, and 60V max collector-emitter voltage. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.
TIP126G
TIP126G by Onsemi is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 80V, max collector current of 5A, and min DC current gain of 1000. With a package style of flange mount and max power dissipation of 65W, it offers high performance in various electronic designs.
5 A
1000
65 W
TIP131G
TIP131G by Onsemi is a NPN Darlington transistor with 80V max collector-emitter voltage, 8A max collector current, and 70W max power dissipation. Ideal for amplifier applications due to its high DC current gain of 1000 (hFE). Package style: Flange mount, terminal form: Through-hole.
DARLINGTON
70 W
TIP132G
TIP132G by Onsemi is a NPN Darlington BJT with 100V VCEO, 8A IC, and 70W Ptot. Ideal for amplifier applications, it has hFE of 1000 and can operate up to 150 °C. Package style is flange mount with through-hole terminals.
TIP140G
TIP140G by Onsemi is a NPN power BJT with 125W max power dissipation, 60V max collector-emitter voltage, and 10A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor operates at up to 150°C and has a min DC current gain of 500 (hFE).
10 A
TO-247
125 W
MATTE TIN
SWITCHING
4 MHz
TIP141G
TIP141G by Onsemi is a NPN Power BJT with 125W power dissipation, 80V max collector-emitter voltage, and 10A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. With a min hFE of 500 and operating temperature up to 150°C, this transistor is suitable for various high-power electronic designs.
TIP145G
TIP145G by Onsemi is a PNP BJT with 125W power dissipation, 60V collector-emitter voltage, and 10A collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a plastic/epoxy package. With a min hFE of 500 and max operating temp of 150 °C, this transistor is suitable for high-power requirements.
TO-218
TIP2955G
TIP2955G by Onsemi is a PNP BJT transistor with 90W power dissipation, 60V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals.
15 A
5
90 W
2.5 MHz
TIP30G
TIP30G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 30W, max collector-emitter voltage of 40V, and max collector current of 1A. With a min hFE of 15 and operating temp up to 150 °C, it's suitable for various electronic circuits requiring high power handling capabilities.
1 A
40 V
15
30 W
3 MHz
TIP33CG
TIP33CG by Onsemi is a NPN BJT transistor with 80W power dissipation, 100V collector-emitter voltage, and 10A collector current. Ideal for switching applications, it has a min hFE of 20 and operates at up to 150 °C. Its package style is flange mount with matte tin terminal finish.
20
TIP35AG
TIP35AG by Onsemi is a NPN Power BJT with 125W power dissipation, 60V max collector-emitter voltage, and 25A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min DC current gain of 15 and nominal transition frequency of 3MHz.
25 A
TIP41AG
TIP41AG by Onsemi is a NPN power BJT with 65W max power dissipation, 60V max collector-emitter voltage, and 6A max collector current. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. The transistor comes in a plastic/epoxy package with through-hole terminals.
6 A
TIP42AG
TIP42AG by Onsemi is a PNP BJT transistor with 65W power dissipation, 6A collector current, and 150°C max operating temp. Ideal for switching applications, it has a min hFE of 15 and operates at a max VCE of 60V in a rectangular package with through-hole terminals.
TIP42BG
TIP42BG by Onsemi is a PNP power BJT with 65W max power dissipation, 80V max collector-emitter voltage, and 6A max collector current. It is ideal for switching applications due to its single configuration and through-hole terminal form. The transistor's silicon element material ensures reliable performance at up to 150°C operating temperature.
TIP33AG
TIP33AG by Onsemi is a NPN power BJT with 80W max power dissipation, ideal for switching applications. It has a max collector-emitter voltage of 60V, 10A max collector current, and operates up to 150 °C. With a min hFE of 20 and fT of 3MHz, it's suitable for high-power electronic circuits in various industries.
NJVMJD44H11RLG
NJVMJD44H11RLG by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it operates up to 150°C and has an hFE of at least 40. Suitable for surface mount designs in automotive electronics due to AEC-Q101 compliance.
R-PSSO-G2
2
SMALL OUTLINE
20 W
AEC-Q101
YES
GULL WING
30
85 MHz
MJ11030G
MJ11030G by Onsemi is a NPN power BJT with 300W Pd, 90V Vce, and 50A Ic. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. The transistor operates at up to 200 °C, making it suitable for high-power requirements.
50 A
90 V
400
TO-204AA
O-MBFM-P2
200 Cel
METAL
300 W
PIN/PEG
MJD44H11T5G
MJD44H11T5G by Onsemi is a NPN Power BJT with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150 °C. Its small outline package makes it suitable for surface mount designs.
MJL0281A
The Onsemi MJL0281A is a NPN BJT transistor with max. Vce of 260V and Ic of 15A. It has hFE of 75, suitable for amplifier applications. The package style is flange mount with through-hole terminals, made of silicon material for high performance.
HIGH RELIABILITY
260 V
75
TO-264AA
e0
235
TIN LEAD
30 MHz
MJL0302A
The Onsemi MJL0302A is a PNP Power BJT with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a hFE of 75 and SILICON element. The transistor comes in a PLASTIC/EPOXY package with FLANGE MOUNT style and TIN LEAD finish.
BD234G
BD234G by Onsemi is a PNP BJT transistor with 45V VCEO, 2A IC, and 25W power dissipation. Ideal for amplifier applications, it has a hFE of 25 and operates up to 150°C. The package style is flange mount with a rectangular shape and matte tin finish in a through-hole terminal form.
45 V
25
TO-225AA
25 W
MJE210TG
MJE210TG by Onsemi is a PNP BJT with 15W power dissipation, 40V max. collector-emitter voltage, and 5A max. collector current. Ideal for amplifier applications due to its 65MHz transition frequency and single terminal configuration in a rectangular package style.
10
TO-225
15 W
65 MHz
MJE210T
MJE210T by Onsemi is a PNP BJT transistor with 40V VCEO, 5A IC, and 1.5W power dissipation. Ideal for amplifier applications due to its hFE of 10 and fT of 65MHz. Packaged in plastic/epoxy with through-hole terminals, it operates up to 150 °C.
1.5 W
MJW0281A
The Onsemi MJW0281A is a NPN BJT transistor with 260V VCEO, 15A IC, and 150W Ptot. Ideal for amplifier applications due to its high hFE of 75 and low VCEsat of 1V. With a max operating temperature of 150 °C, it offers reliable performance in various environments.
400 pF
-65 Cel
150 W
1 V
MJW0302A
MJW0302A by Onsemi is a PNP BJT transistor with VCEsat of 1V, hFE of 75, and IC of 15A. Ideal for amplifier applications due to its high power dissipation of 150W and max operating temperature of 150 °C. Package style is flange mount with rectangular shape and through-hole terminals.
NJD2873RL
NJD2873RL by Onsemi is a NPN BJT transistor with 50V VCEO, 2A IC, and 15W Ptot. Ideal for amplifier applications, it has hFE of 40, fT of 65MHz, and operates up to 175 °C. This Gull Wing package with tin lead finish is surface mountable and features a small outline design.
50 V
175 Cel
MJL0281AG
The Onsemi MJL0281AG is a NPN BJT transistor with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a min hFE of 75 and features a PLASTIC/EPOXY package with FLANGE MOUNT style.
2N6034G
2N6034G by Onsemi is a PNP BJT with 40V VCEO, 4A IC, and 25MHz fT. Ideal for amplifier applications, it features a built-in diode and resistor in a plastic/epoxy package with through-hole terminals. Max power dissipation of 1.5W at 150 °C ensures reliable performance in various environments.
4 A
100
2SB817C-1E
The Onsemi 2SB817C-1E is a PNP BJT transistor with max. collector-emitter voltage of 140V and max. collector current of 12A. With a min DC current gain of 35 and nominal transition frequency of 10MHz, it's ideal for switching applications in various electronic circuits.
12 A
140 V
35
10 MHz
NJVBUB323ZT4G
NJVBUB323ZT4G by Onsemi is a NPN BJT with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 350V, max operating temp of 175°C, and can handle up to 10A collector current. This power transistor comes in a small outline package suitable for surface mount assembly.
350 V
Matte Tin (Sn) - annealed
2 MHz
NJVMJD122T4G-VF01
NJVMJD122T4G-VF01 by Onsemi is a NPN BJT with Darlington configuration, hFE of 100, and VCE of 100V. Ideal for amplifier applications, it operates b/w -65 to 150°C with IC up to 8A. Suitable for surface mount with Gull Wing terminals in a small outline package.
NJVMJD148T4G-VF01
NJVMJD148T4G-VF01 by Onsemi is a NPN BJT transistor with hFE of 30, VCEO of 45V, and IC of 4A. Ideal for amplifier applications, it operates b/w -55 to 150 °C. This small outline package has Gull Wing terminals and is AEC-Q101 compliant.
NJVMJD253T4G-VF01
NJVMJD253T4G-VF01 by Onsemi is a PNP BJT transistor with hFE of 15, VCEO of 100V, and IC of 4A. Ideal for amplifier applications, it operates b/w -65 to 150°C with a fT of 40MHz. Suitable for surface mount designs in automotive electronics per AEC-Q101 standard.
40 MHz
NJVMJD32CT4G-VF01
NJVMJD32CT4G-VF01 by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100V and a max collector current of 3A. It is commonly used as an amplifier in various applications due to its small outline package style, high transition frequency of 3MHz, and wide operating temperature range from -65°C to 150°C.
3 A
NJVMJD44H11RLG-VF01
NJVMJD44H11RLG-VF01 by Onsemi is a NPN BJT transistor with 80V VCE, 8A IC, and 85MHz fT. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and small outline package style.
NJVMJD45H11RLG-VF01
NJVMJD45H11RLG-VF01 by Onsemi is a PNP BJT transistor for switching applications. It has a hFE of 40, Vce of 80V, and Ic of 8A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance and fT of 90MHz.
90 MHz
NSV1C300ET4G-VF01
NSV1C300ET4G-VF01 by Onsemi is a PNP BJT transistor for switching applications. It has a hFE of 50, Vce of 100V, and Ic of 3A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance and high transition frequency of 100MHz.
100 MHz
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01 by Onsemi is a NPN BJT transistor for switching applications. It has a hFE of 80, VCE of 100V, and IC of 3A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance.
80
120 MHz
2SB1203T-H
The Onsemi 2SB1203T-H is a NPN Power BJT with max VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications due to its high transition frequency of 180MHz and low collector-emitter voltage of 50V. The transistor comes in a plastic/epoxy package with through-hole terminals, making it suitable for various power electronics designs.
40 pF
R-PSIP-T3
e6
IN-LINE
TIN BISMUTH
180 MHz
.4 V
BD244CTU
The Onsemi BD244CTU is a PNP BJT transistor with max VCEsat of 1.5V, IC of 6A, and hFE of 15. Ideal for switching applications, it operates b/w -65 to 150°C with a max VCE of 100V. Its package style is flange mount with through-hole terminals in a rectangular shape.
1.5 V
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