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MPS6717G

Onsemi

MPS6717G by Onsemi

MPS6717G by Onsemi is a NPN BJT transistor with max VCEsat of 0.5V, hFE of 50, and IC of 0.5A. Ideal for amplifier applications, it operates b/w -55 to 150 °C with a max VCE of 80V. The package is cylindrical with through-hole terminals and can dissipate up to 2.5W power.

Median Price

$0.827

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Nova Conductors

Japan . 72 parts In-Stock

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$0.827

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Chip Stock

USA . 61,000 parts In-Stock

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Vyrian

USA . 12,920 parts In-Stock

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Digiode

USA . 396 parts In-Stock

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AZTECH Wire

Italy . 783 parts In-Stock

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$16.710

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QUARKTWIN TECHNOLOGY LTD

USA . 29,395 parts In-Stock

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Kulean Microsystems

USA . 4,086 parts In-Stock

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SupplyDigital Components

Austria . 3,691 parts In-Stock

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Problanco Electronics

Mexico . 1,806 parts In-Stock

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Corphita

USA . 1,456 parts In-Stock

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Corohmni

South Africa . 392 parts In-Stock

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UHIMA Technologies

Türkiye . 118 parts In-Stock

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TANS Electronics

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Overview

Enhance your electronic projects with the MPS6717G by Onsemi, a high-quality Power Bipolar Junction Transistor designed for amplifiers. Manufactured by Onsemi, a trusted leader in the industry, this NPN transistor offers exceptional performance and reliability. With a low VCEsat of 0.5V and a maximum collector-emitter voltage of 80V, this transistor is ideal for various applications. Experience the value and benefits of this product with its high DC current gain, optimal power dissipation, and wide operating temperature range. Upgrade your projects today with the MPS6717G and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, making it suitable for a wide range of applications.

Configuration: SINGLE

Simplifies circuit design and makes it easy to integrate into various electronic systems.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, providing reliable signal amplification capabilities.

Maximum VCEsat: 0.5 V

Low VCEsat ensures efficient operation and minimal power loss in the circuit, increasing overall efficiency.

Package Shape: ROUND

Compact and space-saving design, making it easy to mount and integrate into different types of electronic devices.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and installation onto a PCB, ensuring a secure and reliable connection.

No. of Terminals: 3

Simplified connection setup and reduced risk of errors during installation or integration into a circuit.

Maximum Power Dissipation (Abs): 2.5 W

Can handle relatively high power levels, making it suitable for applications that require power amplification.

Package Style (Meter): CYLINDRICAL

Unique design for easy identification and compatibility with specific mounting configurations.

Maximum Power Dissipation Ambient: 1 W

Efficient heat dissipation capabilities, ensuring stable operation under various ambient temperature conditions.

Minimum DC Current Gain (hFE): 50

Consistent and reliable amplification performance, ensuring accurate signal amplification in the circuit.

Maximum Operating Temperature: 150 °C

Wide operating temperature range, suitable for applications that require operation in harsh or elevated temperature environments.

Maximum Collector-Base Capacitance: 30 pF

Low capacitance for minimal signal distortion, ensuring clean and accurate signal amplification.

Maximum Collector-Emitter Voltage: 80 V

Can withstand high voltages, making it suitable for applications that require voltage amplification.

Transistor Element Material: SILICON

High-quality material with reliable electrical properties, ensuring consistent and stable transistor performance.

Minimum Operating Temperature: -55 °C

Suitable for operation in extreme cold temperatures, making it versatile for use in a variety of environments.

Maximum Collector Current (IC): 0.5 A

Can handle moderate current levels, making it suitable for a wide range of circuit applications.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: BOTTOM

Easy and secure mounting onto a PCB, ensuring stable and reliable connections.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during soldering processes, ensuring a strong and durable solder joint.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MPS6717G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

30 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

.5 V

Trade Compliance

MPS6717G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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