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MPS6717RLRA

Onsemi

MPS6717RLRA by Onsemi

MPS6717RLRA by Onsemi is a NPN BJT transistor with max VCEsat of 0.5V, hFE of 50, and IC of 0.5A. Ideal for amplifier applications due to its single configuration and max power dissipation of 2.5W in a cylindrical package style. Operating temperature ranges from -55 °C to 150°C making it suitable for various electronic designs.

Median Price

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Lifecycle Status

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4

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1k+

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R&J Components

USA . 6,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,850 parts In-Stock

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Vyrian

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Digiode

USA . 1,055 parts In-Stock

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Component Stockers USA

USA . 440 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 8,075 parts In-Stock

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Problanco Electronics

Mexico . 5,946 parts In-Stock

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SupplyDigital Components

Austria . 4,870 parts In-Stock

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TANS Electronics

Latvia . 4,793 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,668 parts In-Stock

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Corphita

USA . 2,311 parts In-Stock

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Corohmni

South Africa . 367 parts In-Stock

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UHIMA Technologies

Türkiye . 269 parts In-Stock

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Overview

Unleash the power of innovation with the MPS6717RLRA by Onsemi. Crafted with precision and expertise, this Power BJT transistor offers unparalleled performance for amplifier applications. With a maximum VCEsat of 0.5V and a minimum DC current gain of 50, this NPN transistor delivers exceptional quality and reliability. Whether you're working on audio amplifiers or signal processing systems, trust in the value and benefits that Onsemi brings to the table. Elevate your projects to new heights with the MPS6717RLRA - where quality meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliable performance.

Polarity or Channel Type: NPN

Commonly used type of transistor that allows for easy integration into circuit designs.

Configuration: SINGLE

Simplified setup with only one transistor needed for amplification.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in such applications.

Maximum VCEsat: 0.5 V

Low saturation voltage helps minimize power loss and improve efficiency.

Package Shape: ROUND

Compact and space-saving design for easy installation in various electronic devices.

Terminal Form: THROUGH-HOLE

Traditional terminal form that allows for easy soldering onto circuit boards.

No. of Terminals: 3

Straightforward connectivity with a limited number of terminals.

Maximum Power Dissipation (Abs): 2.5 W

Capable of handling high power levels without overheating or damage.

Package Style (Meter): CYLINDRICAL

Compact cylindrical design that fits well in various electronic devices.

Maximum Power Dissipation Ambient: 1 W

Efficient power dissipation even in high-temperature environments.

Minimum DC Current Gain (hFE): 50

High DC current gain ensures reliable current amplification.

Maximum Operating Temperature: 150 °C

Can operate effectively in high-temperature conditions without performance degradation.

Maximum Collector-Base Capacitance: 30 pF

Low capacitance helps in high-frequency applications to maintain signal integrity.

Maximum Collector-Emitter Voltage: 80 V

Suitable for applications requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

Silicon material provides reliable and consistent performance.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature environments without issues.

Maximum Collector Current (IC): 0.5 A

Able to handle moderate current levels for various applications.

Terminal Finish: TIN LEAD

Provides a reliable electrical connection for efficient operation.

Terminal Position: BOTTOM

Easy integration into circuit boards with the terminal position at the bottom.

Peak Reflow Temperature °C: 235

Can withstand high reflow temperatures during manufacturing processes.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MPS6717RLRA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

30 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

.5 V

Trade Compliance

MPS6717RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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