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MPS6717RLRAG

Onsemi

MPS6717RLRAG by Onsemi

MPS6717RLRAG by Onsemi is a NPN BJT transistor with max VCEsat of 0.5V, hFE of 50, and IC of 0.5A. Ideal for amplifier applications due to its high power dissipation (2.5W) and collector-emitter voltage of 80V. Its package style is cylindrical with through-hole terminals for easy mounting in various electronic circuits.

Median Price

$0.185

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 81,923 parts In-Stock

1+ parts

-

100+ parts

$0.185

1k+ parts

$0.153

10k+ parts

$0.137

81,923

-

$0.185

$0.153

$0.137

DigiKey

USA . 81,923 parts In-Stock

1+ parts

-

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$0.230

81,923

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$0.230

Verical

USA . 81,923 parts In-Stock

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$0.171

81,923

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$0.171

Distributors (In-Stock)

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Digiode

USA . 1,090 parts In-Stock

1+ parts

$0.144

100+ parts

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1,090

$0.144

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Component Electronics Inc.

Canada . 500 parts In-Stock

1+ parts

$1.150

100+ parts

$0.870

1k+ parts

$0.750

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-

500

$1.150

$0.870

$0.750

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DigiKey Marketplace

USA . 77,142 parts In-Stock

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77,142

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Chip Stock

USA . 52,000 parts In-Stock

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52,000

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Vyrian

USA . 11,202 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,558 parts In-Stock

1+ parts

$0.137

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1,558

$0.137

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Corohmni

South Africa . 129 parts In-Stock

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$0.152

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129

$0.152

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AZTECH Wire

Italy . 458 parts In-Stock

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$12.920

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458

$12.920

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Kepictronics

USA . 80,989 parts In-Stock

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Continental Prestige Electronics

USA . 77,142 parts In-Stock

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$0.137

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$0.137

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QUARKTWIN TECHNOLOGY LTD

USA . 11,630 parts In-Stock

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11,630

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SupplyDigital Components

Austria . 6,028 parts In-Stock

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TANS Electronics

Latvia . 4,515 parts In-Stock

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Kulean Microsystems

USA . 2,623 parts In-Stock

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2,623

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UHIMA Technologies

Türkiye . 966 parts In-Stock

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Problanco Electronics

Mexico . 733 parts In-Stock

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Overview

Enhance your electronic designs with the MPS6717RLRAG Power Bipolar Junction Transistor from Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by industry professionals worldwide. Ideal for amplifier applications, this NPN transistor offers a maximum VCEsat of just 0.5V, ensuring efficient performance. With a maximum collector-emitter voltage of 80V and a minimum DC current gain of 50, this transistor delivers excellent power dissipation and temperature handling capabilities. Upgrade your projects today with the MPS6717RLRAG and experience the value and benefits that Onsemi brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, providing reliable performance in these applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to integrate this transistor into different electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Maximum VCEsat: 0.5 V

Low VCEsat value reduces power losses and improves efficiency, making this transistor suitable for power-sensitive applications.

Package Shape: ROUND

Round package shape allows for easy mounting and handling of the transistor in various electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure connection and ease of soldering, ensuring reliable operation in different environments.

No. of Terminals: 3

With 3 terminals, this transistor enables simple and straightforward connections in electronic circuits.

Maximum Power Dissipation (Abs): 2.5 W

High maximum power dissipation rating allows the transistor to handle significant power levels without overheating, ensuring long-term reliability.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact and space-saving design, making it suitable for applications with limited space.

Maximum Power Dissipation Ambient: 1 W

This transistor can dissipate up to 1 W of power in ambient conditions, ensuring reliable operation even in challenging environments.

Minimum DC Current Gain (hFE): 50

With a minimum DC current gain of 50, this transistor provides consistent and stable amplification of input signals.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to perform reliably in demanding thermal conditions without degradation.

Maximum Collector-Base Capacitance: 30 pF

Low collector-base capacitance reduces signal distortion and improves high-frequency performance in amplifier circuits.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating makes this transistor suitable for applications requiring voltage amplification and power switching.

Transistor Element Material: SILICON

Silicon-based transistor element provides high reliability, temperature stability, and performance consistency in various environments.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows the transistor to operate in cold environments without compromising performance.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current levels in amplifier and switching circuits.

Terminal Finish: TIN SILVER COPPER

Tin silver copper terminal finish provides excellent conductivity and solderability, ensuring stable connections and low resistance in the circuit.

Terminal Position: BOTTOM

Bottom terminal position allows for convenient PCB mounting and soldering, simplifying the assembly process in electronic systems.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures the solder joints remain intact during the manufacturing process, improving the reliability of the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MPS6717RLRAG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

30 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

.5 V

Trade Compliance

MPS6717RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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