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MPS6717

Onsemi

MPS6717 by Onsemi

MPS6717 by Onsemi is a NPN BJT transistor with 80V VCEO, 0.5A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a 2.5W power dissipation and -55 to 150 °C operating temperature range. Packaged in plastic/epoxy with through-hole terminals, it offers hFE of 50 and CBE capacitance of 30pF.

Median Price

$1.567

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Master Electronics

USA . 124 parts In-Stock

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-

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$1.390

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124

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$1.390

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Verical

USA . 120 parts In-Stock

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$1.744

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120

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$1.744

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 417 parts In-Stock

1+ parts

$1.150

100+ parts

$0.870

1k+ parts

$0.750

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-

417

$1.150

$0.870

$0.750

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Vyrian

USA . 1,602 parts In-Stock

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$1.404

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1,602

$1.404

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Digiode

USA . 1,840 parts In-Stock

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$1.910

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1,840

$1.910

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IBS Electronics

USA . 124 parts In-Stock

1+ parts

$2.819

100+ parts

$1.515

1k+ parts

$0.623

10k+ parts

$0.530

124

$2.819

$1.515

$0.623

$0.530

Chip Stock

USA . 43,000 parts In-Stock

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43,000

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Prism Electronics

USA . 4,646 parts In-Stock

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4,646

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Anansix

USA . 326 parts In-Stock

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326

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Odintec Ltd.

Israel . 200 parts In-Stock

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200

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Sunrise Surplus Inc.

USA . 37 parts In-Stock

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37

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Electronic Expediters

USA . 31 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 75 parts In-Stock

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$1.150

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75

$1.150

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Corphita

USA . 1,371 parts In-Stock

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$1.809

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1,371

$1.809

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QUARKTWIN TECHNOLOGY LTD

USA . 16,466 parts In-Stock

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16,466

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Assy Fe

Spain . 10,000 parts In-Stock

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Perfect Parts

USA . 5,204 parts In-Stock

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Problanco Electronics

Mexico . 4,801 parts In-Stock

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4,801

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TANS Electronics

Latvia . 4,384 parts In-Stock

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4,384

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SupplyDigital Components

Austria . 2,915 parts In-Stock

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2,915

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Kulean Microsystems

USA . 1,590 parts In-Stock

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1,590

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UHIMA Technologies

Türkiye . 825 parts In-Stock

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825

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Overview

Unlock the power of innovation with the MPS6717 by Onsemi. As a leader in the semiconductor industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that are perfect for amplifier applications. With a low VCEsat of 0.5V and a maximum collector-emitter voltage of 80V, this NPN transistor offers exceptional performance and reliability. The MPS6717's through-hole terminal form and cylindrical package shape make it easy to integrate into your designs. Trust Onsemi to provide cutting-edge technology that meets your needs, while delivering value, efficiency, and unmatched quality to every customer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits and are known for their high performance and reliability.

Configuration: SINGLE

The single configuration simplifies the design process and makes it easier to integrate the transistor into a circuit.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor delivers consistent and reliable performance in amplifying signals.

Maximum VCEsat: 0.5 V

The low maximum VCEsat value of 0.5V indicates low power consumption and efficient operation of the transistor.

Package Shape: ROUND

The round package shape allows for easy mounting and installation of the transistor in various electronic devices.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a secure connection and easy soldering, ensuring stable performance in different environments.

No. of Terminals: 3

With 3 terminals, this transistor is easy to connect in a circuit and offers flexibility in circuit design.

Maximum Power Dissipation (Abs): 2.5 W

The high maximum power dissipation of 2.5W allows the transistor to handle high power loads without overheating or damage.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers efficient heat dissipation and compact design, making it suitable for space-constrained applications.

Maximum Power Dissipation Ambient: 1 W

With a maximum ambient power dissipation of 1W, this transistor can operate effectively in various temperature conditions without overheating.

Minimum DC Current Gain (hFE): 50

The minimum DC current gain of 50 ensures stable amplification of input signals and reliable performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows the transistor to operate in harsh environments without performance degradation.

Maximum Collector-Base Capacitance: 30 pF

With a low maximum collector-base capacitance of 30pF, this transistor minimizes signal distortion and noise in amplifier circuits.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage of 80V ensures the transistor can handle high voltage loads without breakdown or damage.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance, reliability, and efficiency, making them a popular choice for various electronic applications.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55 °C, this transistor can operate in extreme cold conditions without performance issues.

Maximum Collector Current (IC): 0.5 A

The maximum collector current of 0.5A allows the transistor to handle high current loads with stable and reliable performance.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides a reliable and durable connection, ensuring long-term performance and stability.

Terminal Position: BOTTOM

The bottom terminal position makes it easy to mount and solder the transistor onto a circuit board, ensuring a secure and stable connection.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235 °C, this transistor can withstand high-temperature soldering processes without damage, ensuring reliable performance during assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MPS6717 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

30 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

.5 V

Trade Compliance

MPS6717 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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