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MPS6519TIN/LEAD

Central Semiconductor

MPS6519TIN/LEAD by Central Semiconductor

MPS6519TIN/LEAD by Central Semiconductor is a PNP BJT transistor with max VCEsat of 0.5V, hFE of 150, and IC of 0.1A. Ideal for amplifier applications, it has a max power dissipation of 1.5W and operates b/w -65°C to 150°C temperature range in a cylindrical package style.

Median Price

$1.200

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 876 parts In-Stock

1+ parts

$1.200

100+ parts

$0.489

1k+ parts

$0.353

10k+ parts

$0.259

876

$1.200

$0.489

$0.353

$0.259

Overview

Upgrade your electronic devices with the MPS6519TIN/LEAD Power Bipolar Junction Transistor by Central Semiconductor. Designed for amplification applications, this PNP transistor offers superior performance and reliability. With a maximum VCEsat of 0.5V and a minimum DC current gain of 150, it provides efficient power dissipation and precise signal amplification. The through-hole terminal form and cylindrical package shape make installation a breeze. Trust Central Semiconductor's expertise in semiconductor manufacturing to deliver high-quality components that enhance the functionality of your electronics. Experience the value and benefits of the MPS6519TIN/LEAD today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for various applications.

Polarity or Channel Type: PNP

Allows for complementary pairing with NPN transistors in circuit design.

Configuration: SINGLE

Simplifies circuit design and implementation.

Transistor Application: AMPLIFIER

Ideal for use in amplifier circuits for signal amplification.

Maximum VCEsat: 0.5 V

Low saturation voltage helps in reducing power losses.

Package Shape: ROUND

Compact and space-saving design.

Terminal Form: THROUGH-HOLE

Easy to solder and secure in circuit boards.

No. of Terminals: 3

Simplifies connection in circuit layouts.

Maximum Power Dissipation (Abs): 1.5 W

Can handle higher power loads without overheating.

Package Style (Meter): CYLINDRICAL

Unique design for specific applications.

Maximum Power Dissipation Ambient: 0.625 W

Efficient heat dissipation in various environmental conditions.

Minimum DC Current Gain (hFE): 150

Consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments.

Maximum Collector-Base Capacitance: 4 pF

Low capacitance for improved high-frequency response.

Maximum Collector-Emitter Voltage: 25 V

Suitable for various voltage applications.

Transistor Element Material: SILICON

High-performance and reliable semiconductor material.

Minimum Operating Temperature: -65 °C

Can operate in extreme cold environments.

Maximum Collector Current (IC): 0.1 A

Suitable for low to moderate current applications.

Terminal Finish: TIN LEAD

Corrosion-resistant finish for long-term reliability.

Terminal Position: BOTTOM

Easy to mount and connect in circuit arrangements.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MPS6519TIN/LEAD attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Central Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

150

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.625 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

.5 V

Trade Compliance

MPS6519TIN/LEAD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Central Semiconductor

At Central Semiconductor, we’re serious about discrete semiconductors. Our business is the pursuit of perfection in the devices we manufacture; the delivery of our products; and the services we provide; all the time, every time. To suit varying applications, our products are available in surface mount, through-hole, and bare die. We produce a wide range of standard devices, but we excel in custom, special, and other niche products and services. As we listen to customers and monitor industry changes, our product design teams are constantly developing new products to meet customers’ ever-changing requirements, as well as industry trends. Discretes are our only business. We maintain an extensive inventory of raw materials and finished goods so customers don't wait weeks or months for what they need. We welcome smaller quantity and special orders that our competitors brush aside, and we're always eager to explore inquiries for non-standard requirements. Every customer has a skilled Customer Relationship Manager/Regional Sales Manager team to coordinate all needs. Customer-focused, obsessed with quality, and dedicated to your complete satisfaction; that's what makes us different.

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