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TIP35AG

Onsemi

TIP35AG by Onsemi

TIP35AG by Onsemi is a NPN Power BJT with 125W power dissipation, 60V max collector-emitter voltage, and 25A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min DC current gain of 15 and nominal transition frequency of 3MHz.

Median Price

$1.850

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 335 parts In-Stock

1+ parts

$1.542

100+ parts

$1.403

1k+ parts

$1.264

10k+ parts

-

335

$1.542

$1.403

$1.264

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Mouser Electronics

USA . 164 parts In-Stock

1+ parts

$4.620

100+ parts

-

1k+ parts

$1.890

10k+ parts

-

164

$4.620

-

$1.890

-

DigiKey

USA . 27 parts In-Stock

1+ parts

$4.620

100+ parts

$2.570

1k+ parts

$1.785

10k+ parts

$1.648

27

$4.620

$2.570

$1.785

$1.648

Rochester

USA . 462 parts In-Stock

1+ parts

-

100+ parts

$1.650

1k+ parts

$1.480

10k+ parts

$1.390

462

-

$1.650

$1.480

$1.390

Verical

USA . 413 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.850

10k+ parts

$1.738

413

-

-

$1.850

$1.738

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,014 parts In-Stock

1+ parts

$1.465

100+ parts

-

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1,014

$1.465

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Vyrian

USA . 6,062 parts In-Stock

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6,062

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Chip Stock

USA . 2,882 parts In-Stock

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2,882

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Semi Source

USA . 158 parts In-Stock

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158

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 247 parts In-Stock

1+ parts

$1.310

100+ parts

-

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247

$1.310

-

-

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Corphita

USA . 592 parts In-Stock

1+ parts

$1.388

100+ parts

-

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592

$1.388

-

-

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Advanced Electronics

New Zealand . 335 parts In-Stock

1+ parts

$1.542

100+ parts

$1.403

1k+ parts

$1.264

10k+ parts

-

335

$1.542

$1.403

$1.264

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Corohmni

South Africa . 291 parts In-Stock

1+ parts

$1.542

100+ parts

-

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291

$1.542

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Microchip USA

USA . 11,063 parts In-Stock

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11,063

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Kulean Microsystems

USA . 1,854 parts In-Stock

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1,854

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Continental Prestige Electronics

USA . 1,819 parts In-Stock

1+ parts

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100+ parts

$2.130

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1,819

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$2.130

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TANS Electronics

Latvia . 1,139 parts In-Stock

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1,139

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Problanco Electronics

Mexico . 1,096 parts In-Stock

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1,096

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SupplyDigital Components

Austria . 902 parts In-Stock

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902

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Perfect Parts

USA . 258 parts In-Stock

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258

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UHIMA Technologies

Türkiye . 234 parts In-Stock

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234

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Overview

Discover the power and reliability of the TIP35AG by Onsemi, a top-quality Power Bipolar Junction Transistor (BJT) designed for various switching applications. With a maximum power dissipation of 125W and a maximum collector current of 25A, this NPN transistor offers unmatched performance in a compact rectangular package. Partnering with Onsemi guarantees superior craftsmanship and innovative technology, ensuring your projects run smoothly and efficiently. Experience the difference with the TIP35AG and elevate your electronics to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering reliable performance.

Configuration: SINGLE

Simplified design with a single transistor configuration for ease of use.

Transistor Application: SWITCHING

Designed specifically for efficient switching applications, ensuring optimal performance.

Maximum Power Dissipation (Abs): 125 W

High power dissipation capability allows the transistor to handle heavy loads without overheating.

Package Shape: RECTANGULAR

Rectangular package shape is commonly used and easy to mount on PCBs.

No. of Terminals: 3

Simple 3-terminal design for easy integration into electronic circuits.

Maximum Collector-Emitter Voltage: 60 V

Handles high voltage levels, making it suitable for a variety of applications.

Maximum Collector Current (IC): 25 A

High collector current rating allows the transistor to handle large currents.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency for fast and efficient switching operations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP35AG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIP35AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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