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MJ11030G

Onsemi

MJ11030G by Onsemi

MJ11030G by Onsemi is a NPN power BJT with 300W Pd, 90V Vce, and 50A Ic. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. The transistor operates at up to 200 °C, making it suitable for high-power requirements.

Median Price

$0.903

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

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$0.903

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300

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Vyrian

USA . 8,059 parts In-Stock

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Digiode

USA . 55 parts In-Stock

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55

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EMSNET

USA . 2 parts In-Stock

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AZTECH Wire

Italy . 493 parts In-Stock

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$18.580

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493

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QUARKTWIN TECHNOLOGY LTD

USA . 25,671 parts In-Stock

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Problanco Electronics

Mexico . 7,275 parts In-Stock

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SupplyDigital Components

Austria . 4,952 parts In-Stock

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TANS Electronics

Latvia . 1,951 parts In-Stock

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UHIMA Technologies

Türkiye . 545 parts In-Stock

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Kulean Microsystems

USA . 485 parts In-Stock

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Corohmni

South Africa . 306 parts In-Stock

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Corphita

USA . 235 parts In-Stock

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Overview

Unlock the power of innovation with the MJ11030G by Onsemi. Crafted with precision and reliability in mind, this Power Bipolar Junction Transistor is a game-changer in the world of amplifiers. Perfect for various applications, this NPN transistor boasts a maximum collector current of 50A and a minimum DC current gain of 400. With a package body made of high-quality metal and a unique configuration featuring a built-in diode and resistor, the MJ11030G offers unparalleled performance and durability. Elevate your projects to new heights with this cutting-edge technology from Onsemi.

Feature Benefit Bullets

Package Body Material: METAL

Metal body provides good thermal conductivity and mechanical strength, making it reliable for high power applications.

Polarity or Channel Type: NPN

NPN type allows for easy integration into existing circuits and amplification applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration offers high current gain and built-in diode and resistor provide added protection and functionality.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Maximum Power Dissipation (Abs): 300 W

High power dissipation capability allows for handling of large power loads without overheating.

Package Style: FLANGE MOUNT

Flange mount package style offers easy installation and secure mounting in various applications.

Minimum DC Current Gain (hFE): 400

High minimum DC current gain ensures stable and reliable amplification of signals.

Maximum Operating Temperature: 200 °C

High maximum operating temperature allows for use in a wide range of operating conditions without performance degradation.

Maximum Collector-Emitter Voltage: 90 V

High maximum collector-emitter voltage rating provides protection against voltage spikes and ensures safe operation.

Maximum Collector Current (IC): 50 A

High maximum collector current allows for handling of large current loads, making it suitable for high power applications.

Transistor Element Material: SILICON

Silicon material offers good performance and reliability, ensuring long-lasting operation.

Terminal Finish: TIN SILVER COPPER

High-quality terminal finish ensures good electrical conductivity and reliable connections.

Terminal Position: BOTTOM

Bottom terminal position provides easy PCB mounting and secure connection.

Case Connection: COLLECTOR

Case connection at collector provides good thermal dissipation and efficient heat transfer.

Peak Reflow Temperature: 260

Peak reflow temperature of 260 °C ensures reliable soldering during assembly process.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ11030G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

90 V

Minimum DC Current Gain (hFE):

400

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MJ11030G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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