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TIP2955G

Onsemi

TIP2955G by Onsemi

TIP2955G by Onsemi is a PNP BJT transistor with 90W power dissipation, 60V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals.

Median Price

$1.236

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 220 parts In-Stock

1+ parts

$1.236

100+ parts

-

1k+ parts

$0.859

10k+ parts

$0.851

220

$1.236

-

$0.859

$0.851

Chip1Stop

Japan . 220 parts In-Stock

1+ parts

$1.236

100+ parts

-

1k+ parts

$0.877

10k+ parts

-

220

$1.236

-

$0.877

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DigiKey

USA . 21 parts In-Stock

1+ parts

$3.200

100+ parts

-

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-

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21

$3.200

-

-

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Verical

USA . 220 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.859

10k+ parts

$0.851

220

-

-

$0.859

$0.851

Flip Electronics (Authorized)

USA . 118 parts In-Stock

1+ parts

-

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118

-

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Future Electronics

Canada . 90 parts In-Stock

1+ parts

-

100+ parts

$1.080

1k+ parts

$0.975

10k+ parts

$0.895

90

-

$1.080

$0.975

$0.895

Rochester

USA . 1 parts In-Stock

1+ parts

-

100+ parts

$1.250

1k+ parts

$1.040

10k+ parts

$0.925

1

-

$1.250

$1.040

$0.925

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,591 parts In-Stock

1+ parts

$0.978

100+ parts

-

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-

10k+ parts

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1,591

$0.978

-

-

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$1.138

100+ parts

-

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100

$1.138

-

-

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Galco

USA . 6 parts In-Stock

1+ parts

$2.740

100+ parts

-

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6

$2.740

-

-

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Component Electronics Inc.

Canada . 50 parts In-Stock

1+ parts

$5.380

100+ parts

$4.040

1k+ parts

$3.500

10k+ parts

-

50

$5.380

$4.040

$3.500

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Vyrian

USA . 7,119 parts In-Stock

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7,119

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Chip Stock

USA . 680 parts In-Stock

1+ parts

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680

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Flip Electronics

USA . 118 parts In-Stock

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100+ parts

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118

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 124 parts In-Stock

1+ parts

$0.730

100+ parts

-

1k+ parts

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10k+ parts

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124

$0.730

-

-

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Semicontronic

India . 124 parts In-Stock

1+ parts

$0.730

100+ parts

$0.712

1k+ parts

$0.708

10k+ parts

-

124

$0.730

$0.712

$0.708

-

Corohmni

South Africa . 339 parts In-Stock

1+ parts

$0.859

100+ parts

-

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339

$0.859

-

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Corphita

USA . 1,498 parts In-Stock

1+ parts

$0.927

100+ parts

-

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-

10k+ parts

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1,498

$0.927

-

-

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Argo Parts USA

USA . 3,757 parts In-Stock

1+ parts

$1.113

100+ parts

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10k+ parts

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3,757

$1.113

-

-

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$1.115

100+ parts

-

1k+ parts

$1.071

10k+ parts

-

100

$1.115

-

$1.071

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Aztec Data Supply Inc.

USA . 2,484 parts In-Stock

1+ parts

$1.197

100+ parts

-

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2,484

$1.197

-

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Continental Prestige Electronics

USA . 375 parts In-Stock

1+ parts

$1.520

100+ parts

$0.972

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-

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375

$1.520

$0.972

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QUARKTWIN TECHNOLOGY LTD

USA . 12,131 parts In-Stock

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12,131

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Lixinc

USA . 11,195 parts In-Stock

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11,195

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Kulean Microsystems

USA . 7,939 parts In-Stock

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7,939

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TANS Electronics

Latvia . 6,102 parts In-Stock

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6,102

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Problanco Electronics

Mexico . 6,017 parts In-Stock

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6,017

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SupplyDigital Components

Austria . 5,373 parts In-Stock

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5,373

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Perfect Parts

USA . 3,130 parts In-Stock

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3,130

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Kepictronics

USA . 2,440 parts In-Stock

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2,440

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Authorized Procurement Solutions

USA . 150 parts In-Stock

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150

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UHIMA Technologies

Türkiye . 130 parts In-Stock

1+ parts

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130

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Overview

Enhance the performance of your electronic devices with the TIP2955G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their power bipolar junction transistors. Ideal for switching applications, this PNP transistor offers a maximum power dissipation of 90W and a collector-emitter voltage of 60V. With a minimum DC current gain of 5 and a maximum operating temperature of 150°C, the TIP2955G provides exceptional value and efficiency. Upgrade your electronics today with this high-quality transistor from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and ensures a long lifespan for the transistor.

Polarity or Channel Type: PNP

The PNP configuration allows for high switching speeds and low power consumption.

Configuration: SINGLE

The single configuration simplifies circuit design and integration.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers efficient performance.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to mount and integrate into existing systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer a secure connection and easy installation process.

No. of Terminals: 3

The 3 terminals provide flexibility in circuit design and implementation.

Maximum Power Dissipation (Abs): 90 W

With a high power dissipation capacity, this transistor can handle heavy loads efficiently.

Package Style (Meter): FLANGE MOUNT

The flange mount package style ensures stability and easy mounting.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 provides reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Able to operate at temperatures up to 150°C, this transistor is suitable for a wide range of environments.

Maximum Collector-Emitter Voltage: 60 V

With a high collector-emitter voltage rating, this transistor is suitable for a variety of applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in various operating conditions.

Maximum Collector Current (IC): 15 A

Capable of handling high collector currents, this transistor is ideal for power applications.

Terminal Finish: MATTE TIN

Matte tin finish on the terminals provides corrosion resistance and ensures a reliable connection.

Terminal Position: SINGLE

Single terminal positioning streamlines the installation process and improves circuit efficiency.

Case Connection: COLLECTOR

The collector case connection simplifies circuit design and enhances thermal management.

Nominal Transition Frequency (fT): 2.5 MHz

With a nominal transition frequency of 2.5 MHz, this transistor offers fast response times and high-frequency operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP2955G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIP2955G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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