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TIP141G

Onsemi

TIP141G by Onsemi

TIP141G by Onsemi is a NPN Power BJT with 125W power dissipation, 80V max collector-emitter voltage, and 10A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. With a min hFE of 500 and operating temperature up to 150°C, this transistor is suitable for various high-power electronic designs.

Median Price

$1.680

Lifecycle Status

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Arrow

USA . 54 parts In-Stock

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$1.119

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Farnell

UK . 276 parts In-Stock

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Chip1Stop

Japan . 54 parts In-Stock

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$1.750

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$1.405

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$1.750

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Newark

USA . 197 parts In-Stock

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$1.990

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$1.410

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$1.060

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Element14

Singapore . 197 parts In-Stock

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$2.790

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$1.910

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$1.380

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$2.790

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Rochester

USA . 73 parts In-Stock

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$1.200

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Verical

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Flip Electronics (Authorized)

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Digiode

USA . 558 parts In-Stock

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$1.273

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TME

Poland . 56 parts In-Stock

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$1.570

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$1.090

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Nova Conductors

Japan . 150 parts In-Stock

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Vyrian

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Flip Electronics

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Corphita

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$1.206

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Corohmni

South Africa . 97 parts In-Stock

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Microchip USA

USA . 256 parts In-Stock

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$9.040

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$8.980

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$8.950

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$8.920

256

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$8.920

AZTECH Wire

Italy . 466 parts In-Stock

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$17.446

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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Overview

Looking for a reliable and high-performance solution for your power switching needs? Look no further than the TIP141G by Onsemi. With a reputation for producing top-quality components, Onsemi delivers the TIP141G, a power bipolar junction transistor that provides efficient switching capabilities. This NPN transistor comes in a rectangular package with a flange mount style, making it easy to install and use. With a maximum collector-emitter voltage of 80V and a maximum operating temperature of 150°C, this transistor is built to handle tough tasks while maintaining optimal performance. Trust the TIP141G to deliver the power and reliability you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering high performance and efficiency.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain and with built-in diode and resistor, simplifies circuit design and saves space.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation in control circuits.

Maximum Power Dissipation (Abs): 125 W

Capable of handling high power dissipation, making it suitable for applications that require high levels of power.

Maximum Collector-Emitter Voltage: 80 V

With a high collector-emitter voltage rating, this transistor can handle higher voltages and is suitable for a wide range of applications.

Maximum Collector Current (IC): 10 A

Capable of handling high collector current, making it suitable for applications that require high current switching.

Nominal Transition Frequency (fT): 4 MHz

With a high transition frequency, this transistor can operate at high frequencies, making it suitable for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP141G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

500

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIP141G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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