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TIP33AG

Onsemi

TIP33AG by Onsemi

TIP33AG by Onsemi is a NPN power BJT with 80W max power dissipation, ideal for switching applications. It has a max collector-emitter voltage of 60V, 10A max collector current, and operates up to 150 °C. With a min hFE of 20 and fT of 3MHz, it's suitable for high-power electronic circuits in various industries.

Median Price

$0.617

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 870 parts In-Stock

1+ parts

-

100+ parts

$0.595

1k+ parts

$0.493

10k+ parts

$0.440

870

-

$0.595

$0.493

$0.440

DigiKey

USA . 870 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.740

10k+ parts

-

870

-

-

$0.740

-

Verical

USA . 870 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.617

10k+ parts

$0.550

870

-

-

$0.617

$0.550

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,372 parts In-Stock

1+ parts

$0.463

100+ parts

-

1k+ parts

-

10k+ parts

-

2,372

$0.463

-

-

-

Vyrian

USA . 5,070 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,070

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,605 parts In-Stock

1+ parts

$0.438

100+ parts

-

1k+ parts

-

10k+ parts

-

1,605

$0.438

-

-

-

Corohmni

South Africa . 400 parts In-Stock

1+ parts

$0.487

100+ parts

-

1k+ parts

-

10k+ parts

-

400

$0.487

-

-

-

Component Stockers USA

USA . 677 parts In-Stock

1+ parts

$0.500

100+ parts

$0.470

1k+ parts

-

10k+ parts

-

677

$0.500

$0.470

-

-

TANS Electronics

Latvia . 7,479 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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7,479

-

-

-

-

Kulean Microsystems

USA . 4,429 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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4,429

-

-

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SupplyDigital Components

Austria . 2,378 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,378

-

-

-

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Problanco Electronics

Mexico . 2,040 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,040

-

-

-

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UHIMA Technologies

Türkiye . 934 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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934

-

-

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Continental Prestige Electronics

USA . 870 parts In-Stock

1+ parts

-

100+ parts

$0.395

1k+ parts

-

10k+ parts

-

870

-

$0.395

-

-

Overview

Power up your projects with the reliable TIP33AG Power Bipolar Junction Transistor from Onsemi. This NPN transistor is perfect for switching applications, offering a maximum power dissipation of 80W and a maximum collector current of 10A. With a minimum DC current gain of 20 and a nominal transition frequency of 3MHz, this transistor provides excellent performance and reliability. Whether you're working on industrial automation, power supplies, or motor control, the TIP33AG is the perfect choice for your next project. Trust in Onsemi's quality and innovation to bring your designs to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material ensuring product longevity and ease of handling.

Polarity or Channel Type: NPN

Commonly used configuration for general purpose applications, providing versatility and compatibility.

Configuration: SINGLE

Simplified circuit design and ease of implementation.

Transistor Application: SWITCHING

Ideal for applications requiring high speed switching capabilities.

Package Shape: RECTANGULAR

Efficient use of space in circuit layout.

Terminal Form: THROUGH-HOLE

Easy installation and secure solder connections.

Maximum Power Dissipation (Abs): 80 W

Ability to handle high power dissipation, suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Secure mounting option for stability and heat dissipation.

Minimum DC Current Gain (hFE): 20

Consistent and reliable amplification of current.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allowing for use in various environments.

Maximum Collector-Emitter Voltage: 60 V

Suitable for medium voltage applications.

Transistor Element Material: SILICON

High-performance semiconductor material with good electrical properties.

Maximum Collector Current (IC): 10 A

High current handling capability for demanding applications.

Terminal Finish: TIN

Corrosion-resistant finish for long-term reliability.

Terminal Position: SINGLE

Simplified connectivity and ease of circuit design.

Peak Reflow Temperature °C: 260

High temperature resistance during soldering processes.

Nominal Transition Frequency (fT): 3 MHz

High frequency response for efficient signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP33AG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIP33AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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