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TIP140G

Onsemi

TIP140G by Onsemi

TIP140G by Onsemi is a NPN power BJT with 125W max power dissipation, 60V max collector-emitter voltage, and 10A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor operates at up to 150°C and has a min DC current gain of 500 (hFE).

Median Price

$1.675

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,177 parts In-Stock

1+ parts

$1.360

100+ parts

$1.330

1k+ parts

$1.310

10k+ parts

-

3,177

$1.360

$1.330

$1.310

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Newark

USA . 206 parts In-Stock

1+ parts

$1.990

100+ parts

$1.380

1k+ parts

$1.010

10k+ parts

-

206

$1.990

$1.380

$1.010

-

DigiKey

USA . 155 parts In-Stock

1+ parts

$2.000

100+ parts

$1.695

1k+ parts

$1.187

10k+ parts

$0.983

155

$2.000

$1.695

$1.187

$0.983

Flip Electronics (Authorized)

USA . 52 parts In-Stock

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-

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52

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RS (Exports)

UK . 50 parts In-Stock

1+ parts

-

100+ parts

$1.000

1k+ parts

$0.710

10k+ parts

-

50

-

$1.000

$0.710

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 20 parts In-Stock

1+ parts

$1.541

100+ parts

-

1k+ parts

-

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-

20

$1.541

-

-

-

TME

Poland . 15 parts In-Stock

1+ parts

$1.590

100+ parts

$1.100

1k+ parts

-

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15

$1.590

$1.100

-

-

Vyrian

USA . 2,562 parts In-Stock

1+ parts

-

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2,562

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Digiode

USA . 962 parts In-Stock

1+ parts

-

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962

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Flip Electronics

USA . 52 parts In-Stock

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-

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52

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 172 parts In-Stock

1+ parts

$1.360

100+ parts

$1.280

1k+ parts

-

10k+ parts

-

172

$1.360

$1.280

-

-

Corohmni

South Africa . 123 parts In-Stock

1+ parts

$1.510

100+ parts

-

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-

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123

$1.510

-

-

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Continental Prestige Electronics

USA . 6,372 parts In-Stock

1+ parts

$1.541

100+ parts

-

1k+ parts

-

10k+ parts

$1.510

6,372

$1.541

-

-

$1.510

Argo Parts USA

USA . 4,217 parts In-Stock

1+ parts

$1.541

100+ parts

-

1k+ parts

-

10k+ parts

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4,217

$1.541

-

-

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$1.541

100+ parts

-

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2,000

$1.541

-

-

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Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$1.572

100+ parts

$1.572

1k+ parts

$1.572

10k+ parts

-

20

$1.572

$1.572

$1.572

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Ampacity Inc.

Singapore . 33 parts In-Stock

1+ parts

$1.830

100+ parts

-

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33

$1.830

-

-

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Aztec Data Supply Inc.

USA . 4,618 parts In-Stock

1+ parts

$1.936

100+ parts

-

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-

10k+ parts

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4,618

$1.936

-

-

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Allen Electronics Distributors

USA . 16 parts In-Stock

1+ parts

$2.155

100+ parts

$1.405

1k+ parts

$1.170

10k+ parts

-

16

$2.155

$1.405

$1.170

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AZTECH Wire

Italy . 581 parts In-Stock

1+ parts

$18.283

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581

$18.283

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Kulean Microsystems

USA . 7,468 parts In-Stock

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7,468

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TANS Electronics

Latvia . 7,114 parts In-Stock

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Microchip USA

USA . 5,083 parts In-Stock

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5,083

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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SupplyDigital Components

Austria . 1,978 parts In-Stock

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1,978

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Problanco Electronics

Mexico . 1,547 parts In-Stock

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1,547

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Corphita

USA . 1,485 parts In-Stock

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1,485

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Perfect Parts

USA . 881 parts In-Stock

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881

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S.R.D Solutions

India . 140 parts In-Stock

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140

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UHIMA Technologies

Türkiye . 115 parts In-Stock

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115

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Overview

Unleash the power of innovation with the TIP140G by Onsemi. As a leader in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJT) like the TIP140G, designed for switching applications. With a maximum power dissipation of 125W and a collector current of 10A, this NPN transistor provides reliable performance and efficiency. The TIP140G is built with a Darlington configuration, featuring a built-in diode and resistor for seamless operation. Elevate your projects to new heights with the TIP140G and experience the superior value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, ensuring a longer lifespan and reliability in various applications.

Polarity or Channel Type: NPN

Allows for easy integration into circuits and systems that require NPN transistors, making it versatile for different setups.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design by having additional components built-in, reducing the need for extra components and saving space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in switching circuits.

Maximum Power Dissipation (Abs): 125 W

Can handle high power dissipation, suitable for applications that require a high power output without overheating.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum voltage rating, this transistor can be used in a wide range of applications without the risk of voltage breakdown.

Maximum Collector Current (IC): 10 A

Capable of handling high currents, making it suitable for applications that require high current switching.

Nominal Transition Frequency (fT): 4 MHz

With a high transition frequency, this transistor can switch at a fast rate, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP140G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

500

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIP140G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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